公开(公告)号：US09881865B1

公开(公告)日：2018-01-30

申请号：US15221338

申请日：2016-07-27

Applicant: Samsung Electronics Co., Ltd. ,  THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY

Inventor： Ki-Hyun Kim ,  Friedrich B. Prinz ,  Jinsung Kang ,  Youngdong Lee ,  John Provine ,  Peter Schindler ,  Stephen P. Walch ,  Yongmin Kim ,  Hyo Jin Kim

IPC: H01L23/522 ,  H01L23/532 ,  H01L23/528 ,  H01L23/535 ,  H01L27/108 ,  H01L21/768

CPC classification number: H01L23/5225 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53257 ,  H01L23/53295 ,  H01L23/535 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10885

Abstract: A method of forming a composite dielectric material can be provided by performing a first deposition cycle to form a first dielectric material and performing a second deposition cycle to form a second dielectric material on the first dielectric material, wherein the first and second dielectric materials comprise different dielectric materials selected from a list consisting of a transition metal nitride, a transition metal oxide, a transition metal carbide, a transition metal silicide, a post-transition metal nitride, a post-transition metal oxide, a post-transition metal carbide, a post-transition metal silicide, a metalloid nitride, a metalloid oxide, and a metalloid carbide.

公开(公告)号：US12243754B2

公开(公告)日：2025-03-04

申请号：US17517304

申请日：2021-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Do Young Choi ,  Sung Min Kim ,  Cheol Kim ,  Hyo Jin Kim ,  Dae Won Ha ,  Dong Woo Han

IPC: H01L21/3213 ,  H01L21/308 ,  H01L27/088 ,  H01L27/092

Abstract: Provided is a semiconductor device. The semiconductor device comprises a first active pattern extending in a first direction on a substrate, a second active pattern which extends in the first direction and is adjacent to the first active pattern in a second direction different from the first direction, a field insulating film placed between the first active pattern and the second active pattern, a first gate structure which crosses the first active pattern, extends in the second direction, and includes a first gate electrode and a first gate spacer, a second gate structure which crosses the second active pattern, extends in the second direction, and includes a second gate electrode and a second gate spacer, a gate separation structure placed on the field insulating film between the first gate structure and the second gate structure.

公开(公告)号：US12238941B2

公开(公告)日：2025-02-25

申请号：US18436812

申请日：2024-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Seok Ha ,  Hyun Seung Song ,  Hyo Jin Kim ,  Kyoung Mi Park ,  Guk Il An

IPC: H10D84/83 ,  H01L21/308 ,  H10D30/01 ,  H10D30/62 ,  H10D64/01 ,  H10D84/01 ,  H10D84/03

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

公开(公告)号：US12199096B2

公开(公告)日：2025-01-14

申请号：US18436812

申请日：2024-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Seok Ha ,  Hyun Seung Song ,  Hyo Jin Kim ,  Kyoung Mi Park ,  Guk Il An

IPC: H01L21/00 ,  H01L21/308 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

公开(公告)号：US20230411529A1

公开(公告)日：2023-12-21

申请号：US18160297

申请日：2023-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo Jin Kim ,  Sang Moon Lee ,  Jin Bum Kim ,  Yong Jun Nam

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/08 ,  H01L21/8234

CPC classification number: H01L29/78672 ,  H01L29/78696 ,  H01L29/0673 ,  H01L29/0847 ,  H01L21/823412 ,  H01L21/823418

Abstract: A semiconductor device includes a lower pattern extending in a first direction, a first blocking structure which is on the lower pattern and includes at least one first blocking film comprising an oxygen-doped crystalline silicon film, a source/drain pattern on the first blocking structure, and a gate structure which extends in a second direction on the lower pattern and includes a gate electrode and a gate insulating film. Related fabrication methods are also discussed.

公开(公告)号：US20210111281A1

公开(公告)日：2021-04-15

申请号：US16934240

申请日：2020-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Jin Kim ,  Dong Woo Kim ,  Sang Moon Lee ,  Seung Hun Lee

IPC: H01L29/78

Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.

公开(公告)号：US10916545B2

公开(公告)日：2021-02-09

申请号：US16354369

申请日：2019-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Jin Kim ,  Dae Won Ha ,  Yoon Moon Park ,  Keun Hwi Cho

IPC: H01L27/092

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first transistor including a single first active fin disposed in the first region, a first gate electrode intersecting the single first active fin, and a single first source/drain layer disposed in the first recess of the single first active fin, and a second transistor including a plurality of second active fins disposed in the second region, a second gate electrode intersecting the plurality of second active fins, and a plurality of second source/drain layers disposed in the second recesses of the plurality of second active fins. The single first active fin and the plurality of second active fins may have a first conductivity type, and a depth of the first recess may be less than a depth of each of the second recesses.

公开(公告)号：US10700203B2

公开(公告)日：2020-06-30

申请号：US16213186

申请日：2018-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Woo Kim ,  Do Hee Kim ,  Hyo Jin Kim ,  Kang Hun Moon ,  Si Hyung Lee

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/45 ,  H01L29/36 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/762 ,  H01L29/66 ,  H01L21/306 ,  H01L27/088

Abstract: A semiconductor device includes a plurality of active fins on a substrate, a gate electrode intersecting the plurality of active fins, and a source/drain region on the plurality of active fins, extending on a first side and a second side of the gate electrode. The source/drain region includes lower epitaxial layers on ones of the plurality of active fins. The lower epitaxial layers include germanium (Ge) having a first concentration. An upper epitaxial layer is on the lower epitaxial layers, and includes germanium (Ge) having a second concentration that is higher than the first concentration. The lower epitaxial layers have convex upper surfaces, and are connected to each other between the active fins.