公开(公告)号：US11682735B2

公开(公告)日：2023-06-20

申请号：US17231120

申请日：2021-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hun Lee ,  Dong Woo Kim ,  Dong Chan Suh ,  Sun Jung Kim

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/51 ,  H01L29/786 ,  H01L29/423 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/08 ,  H01L27/092

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42364 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/068 ,  H01L29/66742 ,  H01L29/78651 ,  H01L29/78684 ,  Y10S977/762 ,  Y10S977/765 ,  Y10S977/938

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

公开(公告)号：US20210111281A1

公开(公告)日：2021-04-15

申请号：US16934240

申请日：2020-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Jin Kim ,  Dong Woo Kim ,  Sang Moon Lee ,  Seung Hun Lee

IPC: H01L29/78

Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.

公开(公告)号：US10700203B2

公开(公告)日：2020-06-30

申请号：US16213186

申请日：2018-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Woo Kim ,  Do Hee Kim ,  Hyo Jin Kim ,  Kang Hun Moon ,  Si Hyung Lee

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/45 ,  H01L29/36 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/762 ,  H01L29/66 ,  H01L21/306 ,  H01L27/088

Abstract: A semiconductor device includes a plurality of active fins on a substrate, a gate electrode intersecting the plurality of active fins, and a source/drain region on the plurality of active fins, extending on a first side and a second side of the gate electrode. The source/drain region includes lower epitaxial layers on ones of the plurality of active fins. The lower epitaxial layers include germanium (Ge) having a first concentration. An upper epitaxial layer is on the lower epitaxial layers, and includes germanium (Ge) having a second concentration that is higher than the first concentration. The lower epitaxial layers have convex upper surfaces, and are connected to each other between the active fins.

公开(公告)号：US10319863B2

公开(公告)日：2019-06-11

申请号：US15373065

申请日：2016-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hun Lee ,  Dong Woo Kim ,  Dong Chan Suh ,  Sun Jung Kim

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L27/092 ,  H01L29/423 ,  H01L21/8238 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/08

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

公开(公告)号：US12206026B2

公开(公告)日：2025-01-21

申请号：US18207274

申请日：2023-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hun Lee ,  Dong Woo Kim ,  Dong Chan Suh ,  Sun Jung Kim

IPC: H01L29/78 ,  B82Y10/00 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

公开(公告)号：US11705520B2

公开(公告)日：2023-07-18

申请号：US17657761

申请日：2022-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Jin Kim ,  Dong Woo Kim ,  Sang Moon Lee ,  Seung Hun Lee

IPC: H01L29/78 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/786 ,  H01L27/092 ,  H01L29/06

CPC classification number: H01L29/7848 ,  H01L21/76829 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/7851 ,  H01L29/78696 ,  H01L29/0653

Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.

公开(公告)号：US20230011153A1

公开(公告)日：2023-01-12

申请号：US17672233

申请日：2022-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Woo Kim ,  Gyeom Kim ,  Jin Bum Kim ,  Dong Suk Shin ,  Sang Moon Lee

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/417

Abstract: A semiconductor device comprises an active pattern on a substrate; a plurality of nanosheets spaced apart from each other; a gate electrode surrounding each of the nanosheets; a field insulating layer surrounding side walls of the active pattern; an interlayer insulating layer on the field insulating layer; a source/drain region comprising a first doping layer on the active pattern, a second doping layer on the first doping layer, and a capping layer forming side walls adjacent to the interlayer insulating layer; a source/drain contact electrically connected to, and on, the source/drain region, and a silicide layer between the source/drain region and the source/drain contact which contacts contact with the second doping layer and extends to an upper surface of the source/drain region. The capping layer extends from an upper surface of the field insulating layer to the upper surface of the source/drain region along side walls of the silicide layer.

公开(公告)号：US11322614B2

公开(公告)日：2022-05-03

申请号：US16934240

申请日：2020-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Jin Kim ,  Dong Woo Kim ,  Sang Moon Lee ,  Seung Hun Lee

IPC: H01L29/78 ,  H01L21/768 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/786

Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.

公开(公告)号：US10557198B2

公开(公告)日：2020-02-11

申请号：US16190558

申请日：2018-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heon Bok Lee ,  Dae Yong Kim ,  Dong Woo Kim ,  Jun Ki Park ,  Sang Yub Ie ,  Sang Jin Hyun

IPC: H01L21/285 ,  C23C16/455

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a substrate chuck, a shower head structure over the substrate chuck, and a gas distribution apparatus connected to the shower head structure. The gas distribution apparatus includes a dispersion container including a first dispersion space and a gas inlet section on the dispersion container. The gas inlet section includes a first inlet pipe including a first inlet path fluidly connected to the first dispersion space and a second inlet pipe including a second inlet path fluidly connected to the first dispersion space. The second inlet pipe surrounds at least a portion of a sidewall of the first inlet pipe.

公开(公告)号：US11004985B2

公开(公告)日：2021-05-11

申请号：US16793162

申请日：2020-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hun Lee ,  Dong Woo Kim ,  Dong Chan Suh ,  Sun Jung Kim

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66 ,  B82Y10/00 ,  H01L27/092

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.