公开(公告)号：US09954028B2

公开(公告)日：2018-04-24

申请号：US15449396

申请日：2017-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hye Yeon ,  Sung Hyun Sim ,  Wan Tae Lim ,  Yong Il Kim ,  Hanul Yoo

IPC: H01L27/15 ,  H01L33/50

CPC classification number: H01L27/156 ,  H01L33/50

Abstract: A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.

公开(公告)号：US09553235B2

公开(公告)日：2017-01-24

申请号：US14627721

申请日：2015-02-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Myung Chun ,  Ji Hye Yeon ,  Jae Hyeok Heo ,  Hyun Seong Kum ,  Han Kyu Seong ,  Young Jin Choi

IPC: H01L21/00 ,  H01L33/24 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L33/24 ,  H01L33/007 ,  H01L33/08 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method for manufacturing a semiconductor light emitting device may include steps of forming a mask layer and a mold layer having a plurality of openings exposing portions of a base layer, forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape, and forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores. The step of forming the plurality of first conductivity-type semiconductor cores may include forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion, removing the mold layer, and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape.

Abstract translation: 半导体发光器件的制造方法可以包括以下步骤：形成掩模层和模具层，所述模具层具有暴露基底层的部分的多个开口，形成多个第一导电型半导体芯，每个第一导电型半导体芯包括主体部分延伸穿过 从底层开口的每个开口和设置在主体部分上的具有圆锥形状的尖端部分，并且在多个第一导电型半导体芯中的每一个上形成有源层和第二导电类型半导体层。 形成多个第一导电型半导体芯的步骤可以包括形成第一区域，使得尖端部分的顶点位于主体部分的中心垂直轴线上，去除模具层，并形成附加生长区域 在第一区域上使得主体部分具有六棱柱形状。