公开(公告)号：US10892298B2

公开(公告)日：2021-01-12

申请号：US16205454

申请日：2018-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tan Sakong ,  Yong Il Kim ,  Jong Uk Seo ,  Ji Hye Yeon

IPC: H01L27/15 ,  H01L33/50

Abstract: A light emitting diode display device is provided. The light emitting diode display device includes a first light emitting diode pixel including a first light emitting diode layer and a first color conversion material on the first light emitting diode layer, a second light emitting diode pixel including a second light emitting diode layer and a second color conversion material on the second light emitting diode layer, a separation film disposed between the first light emitting diode layer and the second light emitting diode layer and a partition disposed between the first color conversion material and the second color conversion material and including a partition material, wherein the first and second light emitting diode pixels are divided by the separation film and the partition, the partition is disposed on the separation film in alignment with the separation film such that the partition includes linear portions that extend in a first direction and the separation film includes linear portions that also extend in the first direction and vertically overlap the linear portions of the partition, and the partition material includes an insulating material different from silicon.

公开(公告)号：US10008640B2

公开(公告)日：2018-06-26

申请号：US15181935

申请日：2016-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hye Yeon ,  Han Kyu Seong ,  Yong Il Kim ,  Jung Sub Kim

IPC: F21V9/00 ,  H01L33/50 ,  F21K9/233 ,  H01L25/075 ,  F21V23/00 ,  F21W131/103 ,  F21Y113/00 ,  F21Y105/10 ,  F21Y115/10 ,  F21Y113/13 ,  H05B33/08

CPC classification number: H01L33/50 ,  F21K9/233 ,  F21V23/003 ,  F21W2131/103 ,  F21Y2105/10 ,  F21Y2113/00 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L2224/16225 ,  H05B33/0857

Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.

公开(公告)号：US09842960B2

公开(公告)日：2017-12-12

申请号：US14867659

申请日：2015-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hyeok Heo ,  Jin Sub Lee ,  Young Jin Choi ,  Hyun Seong Kum ,  Ji Hye Yeon ,  Dae Myung Chun ,  Jung Sub Kim ,  Han Kyu Seong

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/24

CPC classification number: H01L33/005 ,  H01L33/06 ,  H01L33/08 ,  H01L33/145 ,  H01L33/24

Abstract: According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.

公开(公告)号：US11764336B2

公开(公告)日：2023-09-19

申请号：US17385193

申请日：2021-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Sim ,  Yong Il Kim ,  Ha Nul Yoo ,  Ji Hye Yeon ,  Jun Bu Youn ,  Ji Hoon Yun ,  Su Hyun Jo

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/504 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62

Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

公开(公告)号：US10707393B2

公开(公告)日：2020-07-07

申请号：US15995546

申请日：2018-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Gun Lee ,  Yong Il Kim ,  Han Kyu Seong ,  Ji Hye Yeon ,  Jin Sub Lee ,  Young Jin Choi

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/44 ,  H01L33/60 ,  H01L25/075 ,  H01L33/50 ,  H01L27/15 ,  H01L33/46

Abstract: A light emitting device package including a cell array including first, second and third light emitting devices each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, the cell array having a first surface and a second surface opposing the first surface, a light-transmissive substrate including a first wavelength conversion portion and a second wavelength conversion portion corresponding to the first light emitting device and the second light emitting device, respectively, and bonded to the first surface, and a eutectic bonding layer including a first light emitting window, a second light emitting window and a third light emitting window corresponding to the first light emitting device, the second light emitting device and the third light emitting device, respectively, and bonding the light-transmissive substrate and the first to third light emitting devices to each other may be provided.

公开(公告)号：US20180175261A1

公开(公告)日：2018-06-21

申请号：US15617669

申请日：2017-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hanul Yoo ,  Yong ll Kim ,  Sung Hyun Sim ,  Wan Tae Lim ,  Hye Seok Noh ,  Ji Hye Yeon

IPC: H01L33/58 ,  H01L33/06 ,  H01L33/32 ,  H01L33/22 ,  H01L33/12 ,  H01L33/50 ,  H01L33/40 ,  H01L33/00

CPC classification number: H01L33/405 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/12 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/46 ,  H01L33/501 ,  H01L33/505 ,  H01L2933/0016 ,  H01L2933/0041

Abstract: A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.

公开(公告)号：US10991857B2

公开(公告)日：2021-04-27

申请号：US16442870

申请日：2019-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan Tae Lim ,  Sung Hyun Sim ,  Hanul Yoo ,  Yong Il Kim ,  Hye Seok Noh ,  Ji Hye Yeon

IPC: H01L33/50 ,  H01L25/075 ,  H01L27/15 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L33/44

Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.

公开(公告)号：US10957833B2

公开(公告)日：2021-03-23

申请号：US16356283

申请日：2019-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tan Sakong ,  Yong Il Kim ,  Han Kyu Seong ,  Ji Hye Yeon ,  Chung Sun Lee ,  Ji Hwan Hwang

IPC: H01L33/00 ,  H01L33/62 ,  H01L25/075 ,  H01L27/12 ,  H01L23/00

Abstract: A light emitting diode display device includes a display board comprising a plurality of unit pixels, a drive circuit board including a plurality of drive circuit regions corresponding to the plurality of unit pixels, and a plurality of bumps interposed between the plurality of unit pixels and the plurality of drive circuit regions. The plurality of unit pixels comprises a first unit pixel including a first P electrode. The plurality of drive circuit regions comprises a first drive circuit region corresponding to the first unit pixel and a first pad connected to a first drive transistor, the plurality of bumps includes a first solder in contact with the first pad, and a first bump on the first solder and including a first filler in contact with the first P electrode, the first solder includes at least one of tin and silver, and the first filler includes copper or nickel.

公开(公告)号：US10686103B2

公开(公告)日：2020-06-16

申请号：US15984959

申请日：2018-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hye Yeon ,  Han Kyu Seong ,  Yong Il Kim ,  Jung Sub Kim

IPC: H01L33/50 ,  F21K9/233 ,  H01L25/075 ,  F21V23/00 ,  F21W131/103 ,  F21Y113/00 ,  F21Y105/10 ,  F21Y115/10 ,  F21Y113/13 ,  H05B45/20

Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.

公开(公告)号：US10700246B2

公开(公告)日：2020-06-30

申请号：US16299422

申请日：2019-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Sim ,  Yong Il Kim ,  Ha Nul Yoo ,  Ji Hye Yeon ,  Jun Bu Youn ,  Ji Hoon Yun ,  Su Hyun Jo

IPC: H01L33/54 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.