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公开(公告)号：US10374003B2
公开(公告)日：2019-08-06
申请号：US15850232
申请日：2017-12-21
IPC分类号： H01L27/00 , H01L33/00 , H01L27/15 , H01L33/18 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/62 , H01L25/075 , F21K9/232 , F21K9/235 , F21K9/237 , H01L33/06 , H01L31/105 , H01L31/0352 , H01L31/00 , F21V31/00 , F21Y115/10
摘要： A semiconductor light emitting device includes a plurality of light emitting cells having first and second surface opposing each other, the plurality of light emitting cells including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer therebetween, an insulating layer on the second surface of the plurality of light emitting cells and having first and second openings defining a first contact region of the first conductivity-type semiconductor layer and a second contact region of the second conductivity-type semiconductor layer, respectively, a connection electrode on the insulating layer and connecting a first contact region and a second contact region of adjacent light emitting cells, a transparent support substrate on the first surface of the plurality of light emitting cells, and a transparent bonding layer between the plurality of light emitting cells and the transparent support substrate.
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公开(公告)号：US10008640B2
公开(公告)日：2018-06-26
申请号：US15181935
申请日：2016-06-14
发明人： Ji Hye Yeon , Han Kyu Seong , Yong Il Kim , Jung Sub Kim
IPC分类号： F21V9/00 , H01L33/50 , F21K9/233 , H01L25/075 , F21V23/00 , F21W131/103 , F21Y113/00 , F21Y105/10 , F21Y115/10 , F21Y113/13 , H05B33/08
CPC分类号： H01L33/50 , F21K9/233 , F21V23/003 , F21W2131/103 , F21Y2105/10 , F21Y2113/00 , F21Y2113/13 , F21Y2115/10 , H01L25/0753 , H01L2224/16225 , H05B33/0857
摘要： A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.
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公开(公告)号：US09842960B2
公开(公告)日：2017-12-12
申请号：US14867659
申请日：2015-09-28
发明人： Jae Hyeok Heo , Jin Sub Lee , Young Jin Choi , Hyun Seong Kum , Ji Hye Yeon , Dae Myung Chun , Jung Sub Kim , Han Kyu Seong
CPC分类号： H01L33/005 , H01L33/06 , H01L33/08 , H01L33/145 , H01L33/24
摘要： According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.
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公开(公告)号：US09024294B2
公开(公告)日：2015-05-05
申请号：US14249002
申请日：2014-04-09
发明人： Han Kyu Seong , Hun Jae Chung , Jung Ja Yang , Cheol Soo Sone
IPC分类号： H01L29/06 , H01L31/00 , H01L33/00 , H01L33/04 , H01L27/15 , H01L33/16 , H01L33/08 , H01L33/24
CPC分类号： H01L33/04 , H01L27/156 , H01L33/08 , H01L33/16 , H01L33/24 , Y10S977/816
摘要： There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.
摘要翻译： 公开了III族氮化物纳米棒发光器件及其制造方法。 III族氮化物纳米棒发光器件包括：基板，形成在基板上的绝缘膜，并且包括暴露基板的不同直径的部分的多个开口，以及分别形成在第一导电III族氮化物纳米棒 所述多个开口，其中所述第一导电III族氮化物纳米棒中的每一个具有有源层和在其表面上顺序地形成的第二导电半导体层。
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公开(公告)号：US10707393B2
公开(公告)日：2020-07-07
申请号：US15995546
申请日：2018-06-01
发明人： Dong Gun Lee , Yong Il Kim , Han Kyu Seong , Ji Hye Yeon , Jin Sub Lee , Young Jin Choi
IPC分类号： H01L33/00 , H01L33/62 , H01L33/44 , H01L33/60 , H01L25/075 , H01L33/50 , H01L27/15 , H01L33/46
摘要： A light emitting device package including a cell array including first, second and third light emitting devices each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, the cell array having a first surface and a second surface opposing the first surface, a light-transmissive substrate including a first wavelength conversion portion and a second wavelength conversion portion corresponding to the first light emitting device and the second light emitting device, respectively, and bonded to the first surface, and a eutectic bonding layer including a first light emitting window, a second light emitting window and a third light emitting window corresponding to the first light emitting device, the second light emitting device and the third light emitting device, respectively, and bonding the light-transmissive substrate and the first to third light emitting devices to each other may be provided.
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公开(公告)号：US09461199B2
公开(公告)日：2016-10-04
申请号：US14752814
申请日：2015-06-26
发明人： Jae Hyeok Heo , Jung Sub Kim , Young Jin Choi , Jin Sub Lee , Sam Mook Kang , Yeon Woo Seo , Han Kyu Seong , Dae Myung Chun
IPC分类号： H01L31/00 , H01L33/06 , H01L27/15 , H01L33/32 , H01L33/62 , H01L33/24 , H01L33/00 , H05B33/08
CPC分类号： H01L33/06 , H01L27/153 , H01L33/0025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/32 , H01L33/62 , H01L2224/16245 , H01L2224/48091 , H01L2224/48227 , H05B33/0803 , H01L2924/00014
摘要： There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.
摘要翻译： 提供了一种纳米结构半导体发光器件，其包括由第一导电型半导体形成的基极层，设置在基底层上并具有多个开口的绝缘层，以及多个发光纳米结构， 开口。 每个发光纳米结构包括由第一导电型半导体形成的纳米孔，以及依次设置在纳米孔表面上的有源层和第二导电型半导体层。 多个发光纳米结构通过相同的生长工艺形成，并分成n组（其中n为2以上的整数），每组具有至少两个发光纳米结构。 纳米孔的直径，高度和间距中的至少一个是不同的，使得有源层通过组发射具有不同波长的光。
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公开(公告)号：US09257605B2
公开(公告)日：2016-02-09
申请号：US14790047
申请日：2015-07-02
发明人： Yeon Woo Seo , Jung-Sub Kim , Young Jin Choi , Denis Sannikov , Han Kyu Seong , Dae Myung Chun , Jae Hyeok Heo
CPC分类号： H01L33/24 , F21K9/232 , F21S41/147 , F21S45/43 , F21S45/47 , F21Y2115/10 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/145 , H01L33/18 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/387 , H01L33/44 , H01L33/62 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.
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公开(公告)号：US10573632B2
公开(公告)日：2020-02-25
申请号：US16185602
申请日：2018-11-09
发明人： Ji Hye Yeon , Su Hyun Jo , Sung Hyun Sim , Ha Nul Yoo , Yong Il Kim , Han Kyu Seong
摘要： A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.
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公开(公告)号：US10566382B2
公开(公告)日：2020-02-18
申请号：US15788933
申请日：2017-10-20
发明人： Ji Hye Yeon , Han Kyu Seong , Wan Tae Lim , Sung Hyun Sim , Hanul Yoo
摘要： A semiconductor light emitting device includes a plurality of light emitting cells including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers, an insulating layer on the plurality of light emitting cells and having a first opening and a second opening defining a first contact region of the first conductivity type semiconductor layer and a second contact region of the second conductivity type semiconductor layer, respectively, in each of the plurality of light emitting cells, a connection electrode on the insulating layer and connecting the first contact region and the second contact region to electrically connect the plurality of light emitting cells to each other, a transparent support substrate on the insulating layer and the connection electrode, and a transparent bonding layer between the insulating layer and the transparent support substrate.
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公开(公告)号：US10361248B2
公开(公告)日：2019-07-23
申请号：US15352933
申请日：2016-11-16
发明人： Jin Sub Lee , Han Kyu Seong , Yong Il Kim , Jung Sub Kim , Seul Gee Lee
IPC分类号： H01L25/16 , H01L27/15 , H01L33/00 , H01L33/44 , H01L33/50 , H05B33/08 , H05B37/02 , H01L25/075
摘要： A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.
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