公开(公告)号：US11569417B2

公开(公告)日：2023-01-31

申请号：US17720923

申请日：2022-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Jo Tak ,  Joo Sung Kim ,  Jong Uk Seo ,  Dong Gun Lee ,  Yong Il Kim

IPC: H01L33/38 ,  H01L33/62 ,  H01L25/075 ,  H01L33/52

Abstract: A method of manufacturing a semiconductor light emitting device, the method including forming a first conductivity-type semiconductor layer on a substrate; forming an active layer on the first conductivity-type semiconductor layer; forming a mask layer having an opening on the active layer; growing a second conductivity-type semiconductor layer through the opening; removing the mask layer; removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer that do not overlap the second conductivity-type semiconductor layer; and removing a portion of the first conductivity-type semiconductor layer to expose the substrate.

公开(公告)号：US11251225B2

公开(公告)日：2022-02-15

申请号：US16864954

申请日：2020-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Goo Cha ,  Yong Il Kim ,  Young Soo Park

IPC: H01L33/00 ,  H01L27/15 ,  H01L25/065 ,  H01L33/50 ,  H01L33/52 ,  H01L33/62 ,  H01L25/075 ,  H01L33/44

Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter. Exemplary display panels and methods of manufacturing semiconductor devices and display panels are also disclosed.

公开(公告)号：US10892298B2

公开(公告)日：2021-01-12

申请号：US16205454

申请日：2018-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tan Sakong ,  Yong Il Kim ,  Jong Uk Seo ,  Ji Hye Yeon

IPC: H01L27/15 ,  H01L33/50

Abstract: A light emitting diode display device is provided. The light emitting diode display device includes a first light emitting diode pixel including a first light emitting diode layer and a first color conversion material on the first light emitting diode layer, a second light emitting diode pixel including a second light emitting diode layer and a second color conversion material on the second light emitting diode layer, a separation film disposed between the first light emitting diode layer and the second light emitting diode layer and a partition disposed between the first color conversion material and the second color conversion material and including a partition material, wherein the first and second light emitting diode pixels are divided by the separation film and the partition, the partition is disposed on the separation film in alignment with the separation film such that the partition includes linear portions that extend in a first direction and the separation film includes linear portions that also extend in the first direction and vertically overlap the linear portions of the partition, and the partition material includes an insulating material different from silicon.

公开(公告)号：US10008640B2

公开(公告)日：2018-06-26

申请号：US15181935

申请日：2016-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hye Yeon ,  Han Kyu Seong ,  Yong Il Kim ,  Jung Sub Kim

IPC: F21V9/00 ,  H01L33/50 ,  F21K9/233 ,  H01L25/075 ,  F21V23/00 ,  F21W131/103 ,  F21Y113/00 ,  F21Y105/10 ,  F21Y115/10 ,  F21Y113/13 ,  H05B33/08

CPC classification number: H01L33/50 ,  F21K9/233 ,  F21V23/003 ,  F21W2131/103 ,  F21Y2105/10 ,  F21Y2113/00 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L2224/16225 ,  H05B33/0857

Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.

公开(公告)号：US09324904B2

公开(公告)日：2016-04-26

申请号：US14817750

申请日：2015-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong In Yang ,  Yong Il Kim ,  Kwang Min Song ,  Wan Tae Lim ,  Se Jun Han ,  Hyun Kwon Hong

IPC: H01L21/00 ,  H01L33/00 ,  H01L27/15 ,  H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/0075 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0016

Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.

公开(公告)号：US11075326B2

公开(公告)日：2021-07-27

申请号：US16913201

申请日：2020-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Sim ,  Yong Il Kim ,  Ha Nul Yoo ,  Ji Hye Yeon ,  Jun Bu Youn ,  Ji Hoon Yun ,  Su Hyun Jo

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62

Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

公开(公告)号：US10903397B2

公开(公告)日：2021-01-26

申请号：US16851354

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Il Kim ,  Hyong Sik Won ,  Wan Tae Lim ,  Nam Goo Cha

IPC: H01L33/50 ,  H01L33/08 ,  H01L27/15 ,  H01L25/075 ,  H01L33/44 ,  H01L33/32 ,  H01L33/38 ,  H01L33/58

Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.

公开(公告)号：US10797040B2

公开(公告)日：2020-10-06

申请号：US16798027

申请日：2020-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hye Yeon ,  Su Hyun Jo ,  Sung Hyun Sim ,  Ha Nul Yoo ,  Yong Il Kim ,  Han Kyu Seong

IPC: H01L29/00 ,  H01L27/12 ,  H01L33/50 ,  H01L25/00 ,  H01L23/00 ,  H01L25/18 ,  H01L27/15

Abstract: A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.

公开(公告)号：US10763399B2

公开(公告)日：2020-09-01

申请号：US15684144

申请日：2017-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Gun Lee ,  Yong Il Kim ,  Young Soo Park ,  Jin Sub Lee ,  Wan Tae Lim

IPC: H01L33/12 ,  H01L33/46 ,  H01L27/15 ,  H01L33/50 ,  H01L25/075 ,  H01L33/44

Abstract: A light emitting device package includes a light emitting structure including a first light emitting cell, a second light emitting cell, and a third light emitting cell, each of the first to third light emitting cells including an active layer to emit light of a first wavelength in a first direction and being separated from each other in a second direction, orthogonal to the first direction, a first light adjusting portion including a first wavelength conversion layer in a first recess portion of the first light emitting cell, the first wavelength conversion layer to convert light of the first wavelength to light of a second wavelength, and a second light adjusting portion including a second wavelength conversion layer in a second recess portion of the second light emitting cell, the second wavelength conversion layer to convert light of the first wavelength to light of a third wavelength.

公开(公告)号：US10607877B2

公开(公告)日：2020-03-31

申请号：US15869405

申请日：2018-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Sub Lee ,  Han Kyu Seong ,  Yong Il Kim ,  Sung Hyun Sim ,  Dong gun Lee

IPC: H01L21/68 ,  H01L21/683 ,  H01L23/00 ,  H01L21/67 ,  H01L33/00 ,  H01L33/62 ,  H01L25/075 ,  H01L21/66 ,  B23K26/00

Abstract: A chip mounting method includes providing a first substrate including a light transmissive substrate having first and second surfaces, a sacrificial layer provided on the first surface, and a plurality of chips bonded to the sacrificial layer, obtaining first mapping data by testing the chips, the first mapping data defining coordinates of normal chips and defective chips among the chips, disposing a second substrate below the first surface, disposing the normal chips on the second substrate by radiating a first laser beam to positions of the sacrificial layer corresponding to the coordinates of the normal chips, based on the first mapping data, to remove portions of the sacrificial layer thereby separating the normal chips from the light transmissive substrate, and mounting the normal chips on the second substrate by radiating a second laser beam to a solder layer of the second substrate.