公开(公告)号：US20220399516A1

公开(公告)日：2022-12-15

申请号：US17892564

申请日：2022-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sujin PARK ,  Yuho WON ,  Eun Joo JANG ,  Dae Young CHUNG ,  Sung Woo KIM ,  Jin A KIM ,  Yong Seok HAN

IPC: H01L51/50 ,  H01L51/00

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, hole transport capability per unit area and electron transport capability per unit area of the first quantum dot are greater than hole transport capability per unit area and electron transport capability per unit area of the second quantum dot, respectively.

公开(公告)号：US20220089950A1

公开(公告)日：2022-03-24

申请号：US17543197

申请日：2021-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Jeong Hee LEE ,  Eun Joo JANG

IPC: C09K11/88 ,  C09K11/56

Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

公开(公告)号：US20220085028A1

公开(公告)日：2022-03-17

申请号：US17332307

申请日：2021-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin A KIM ,  Ho-In RYU ,  Kyo-Suk CHAE ,  Joon Yong CHOE

IPC: H01L27/108

Abstract: A semiconductor device may include a substrate including trenches and contact recesses having a curved surface profile, conductive patterns in the trenches, buried contacts including first portions filling the contact recesses and second portions on the first portions, and spacer structures including first and second spacers. The second portions may have a pillar shape and a smaller width than top surfaces of the first portions. The buried contacts may be spaced apart from the conductive patterns by the spacer structures. The first spacers may be on the first portions of the buried contacts at outermost parts of the spacer structures. The first spacers may extend along the second portions of the buried contacts and contact the buried contacts. The second spacers may extend along the side surfaces of the conductive patterns and the trenches. The second spacers may contact the conductive patterns. The first spacers may include silicon oxide.

公开(公告)号：US20220081614A1

公开(公告)日：2022-03-17

申请号：US17532439

申请日：2021-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee LEE ,  Hyun A KANG ,  Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Yuho WON ,  Eun Joo JANG

IPC: C09K11/88 ,  C09K11/02 ,  C01B19/00

Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR  Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.

公开(公告)号：US20210202869A1

公开(公告)日：2021-07-01

申请号：US17193283

申请日：2021-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A KIM ,  Yuho WON ,  Sung Woo KIM ,  Tae Hyung KIM ,  Jeong Hee LEE ,  Eun Joo JANG

IPC: H01L51/50

Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.

公开(公告)号：US20210066543A1

公开(公告)日：2021-03-04

申请号：US16998262

申请日：2020-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok HAN ,  Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Kun Su PARK ,  Yuho WON ,  Jeong Hee LEE ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: H01L33/06 ,  H01L33/20 ,  H01L33/26 ,  C01B19/04 ,  C09K11/88

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

公开(公告)号：US20190276737A1

公开(公告)日：2019-09-12

申请号：US16298108

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Sung Woo KIM ,  Jin A KIM ,  Jeong Hee LEE ,  Tae Hyung KIM ,  Eun Joo JANG

IPC: C09K11/88 ,  H01L51/50

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.