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公开(公告)号：US20230180498A1
公开(公告)日：2023-06-08
申请号：US18101603
申请日：2023-01-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin A KIM , Yuho WON , Sung Woo KIM , Tae Hyung KIM , Jeong Hee LEE , Eun Joo JANG
IPC: H10K50/115
CPC classification number: H10K50/115
Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.
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公开(公告)号：US20210062087A1
公开(公告)日：2021-03-04
申请号：US17007179
申请日：2020-08-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Kun Su PARK , Yuho WON , Jeong Hee LEE , Eun Joo JANG , Hyo Sook JANG , Yong Seok HAN , Heejae CHUNG
Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
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3.发明申请公开(公告)号：US20190119569A1
公开(公告)日：2019-04-25
申请号：US16170493
申请日：2018-10-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong Hee LEE , Hyun A KANG , Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Yuho WON , Eun Joo JANG
Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.
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公开(公告)号：US20230114604A1
公开(公告)日：2023-04-13
申请号：US18065910
申请日：2022-12-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Seok HAN , Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Kun Su PARK , Yuho WON , Jeong Hee LEE , Eun Joo JANG , Hyo Sook JANG
Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.
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公开(公告)号：US20190276738A1
公开(公告)日：2019-09-12
申请号：US16298276
申请日：2019-03-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hyung KIM , Jeong Hee LEE , Sung Woo KIM , Jin A KIM , Yuho WON , Eun Joo JANG
Abstract: A quantum dot includes a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on (e.g., directly on) the core and including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, wherein a size of the quantum dot is greater than or equal to about 10 nanometers (nm) and the quantum dot includes at least four protrusions. A production method thereof and an electronic device including the same are also disclosed.
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Patent Agency Ranking
公开(公告)号：US20170046062A1
公开(公告)日：2017-02-16
申请号：US15233554
申请日：2016-08-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae Wook LEE , Kyung Jung KIM , Yong Nam KIM , Jin A KIM , Jun Hyung CHO
IPC: G06F3/0488 , H04W4/12 , G06F3/16 , G09G5/377 , G06F3/0482 , G06F3/041 , G10L13/04 , G09G5/14 , H04W4/02 , G06F3/0485
CPC classification number: G06F3/04883 , G06F3/0412 , G06F3/0482 , G06F3/0485 , G06F3/0488 , G06F3/04886 , G06F3/167 , G06F2203/04104 , G06F2203/04803 , G06F2203/04804 , G06F2203/04808 , G09G5/14 , G09G5/377 , G09G2340/12 , G09G2354/00 , G10L13/04 , H04W4/12
Abstract: An electronic device and method for processing a user input in the electronic device are provided. The electronic device includes a display; an input module configured to receive a user input; and a processor configured to: execute an application on a first layer having a first area; set a second layer having a second area, is the second layer being above the first layer; output the first layer and the second layer on the display, the second layer at least partially overlapping on the first layer; and if the user input is received in the second area and satisfies a given condition, execute a pre-defined function corresponding to the given condition.
Abstract translation: 提供了一种用于处理电子设备中的用户输入的电子设备和方法。 电子设备包括显示器; 被配置为接收用户输入的输入模块; 以及处理器，被配置为：在具有第一区域的第一层上执行应用; 设置具有第二区域的第二层，是第二层在第一层之上; 在显示器上输出第一层和第二层，第二层至少部分地重叠在第一层上; 并且如果在第二区域中接收到用户输入并满足给定条件，则执行与给定条件对应的预定义函数。
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公开(公告)号：US20240244862A1
公开(公告)日：2024-07-18
申请号：US18405428
申请日：2024-01-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin A KIM , Ju Hyun KIM , Yuho WON , Won Sik YOON , Taehyung KIM , Hyunju KIM
IPC: H10K50/115 , C09K11/02 , C09K11/06 , H10K85/30
CPC classification number: H10K50/115 , C09K11/02 , C09K11/06 , H10K85/381 , H10K2101/40
Abstract: A light emitting device includes a first electrode and a second electrode facing each other, a light emitting layer disposed between the first electrode and the second electrode, and the light emitting layer including quantum dots, wherein the light emitting layer includes a first light emitting layer proximate to the first electrode and a second light emitting layer proximate to the second electrode, the quantum dots of the first light emitting layer include a first ligand on a surface, and the quantum dots of the second light emitting layer include a second ligand on a surface, the first ligand different from the second ligand, a HOMO energy level of the first light emitting layer is lower (shallower) than a HOMO energy level of the second light emitting layer.
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公开(公告)号：US20240107751A1
公开(公告)日：2024-03-28
申请号：US18352528
申请日：2023-07-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin A KIM , Kang-Uk KIM , Sang Hoon MIN , Choong Hyun LEE
IPC: H10B12/00
CPC classification number: H10B12/485 , H10B12/312 , H10B12/482 , H10B12/488
Abstract: A semiconductor memory device is provided. The semiconductor memory device comprises a substrate including a cell region having an active region defined by a cell element isolation layer, a peripheral region near the cell region, and a boundary region between the cell region and the peripheral region. The device includes a word line structure in the substrate and extending in a first direction, a bit line structure on the substrate extending from the cell region to the boundary region in a second direction that crosses the first direction, including first and second cell conductive layers sequentially stacked on the substrate, and a bit line contact between the substrate and the bit line structure and connecting the substrate with the bit line structure. The second cell conductive layer in the boundary region is thicker than the second cell conductive layer in the cell region.
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9.发明申请公开(公告)号：US20230093467A1
公开(公告)日：2023-03-23
申请号：US18052597
申请日：2022-11-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin A KIM , Yuho WON , Sung Woo KIM , Tae Hyung KIM , Jeong Hee LEE , Eun Joo JANG
Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.
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10.发明申请公开(公告)号：US20200248073A1
公开(公告)日：2020-08-06
申请号：US16851625
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong Hee LEE , Hyun A KANG , Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Yuho WON , Eun Joo JANG
Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.
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