公开(公告)号：US10756179B2

公开(公告)日：2020-08-25

申请号：US16423641

申请日：2019-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Gil Yang ,  Dong Il Bae ,  Chang Woo Sohn ,  Seung Min Song ,  Dong Hun Lee

IPC: H01L29/06 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/08 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/165 ,  H01L29/10 ,  H01L27/092 ,  H01L27/02 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, a first nanowire spaced apart from a first region of the substrate, a first gate electrode surrounding a periphery of the first nanowire, a second nanowire spaced apart from a second region of the substrate and extending in a first direction and having a first width in a second direction intersecting the first direction, a supporting pattern contacting the second nanowire and positioned under the second nanowire, and a second gate electrode extending in the second direction and surrounding the second nanowire and the supporting pattern.

公开(公告)号：US20200091152A1

公开(公告)日：2020-03-19

申请号：US16405174

申请日：2019-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Woo Noh ,  Myung Gil Kang ,  Geum Jong Bae ,  Dong Il Bae ,  Jung Gil Yang ,  Sang Hoon Lee

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/033 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/08

Abstract: Semiconductor devices are provided. The semiconductor devices may include a first wire pattern extending in a first direction on a substrate and a second wire pattern on the first wire pattern. The second wire pattern may be spaced apart from the first wire pattern and extends in the first direction. The semiconductor devices may also include a first gate structure at least partially surrounding the first wire pattern and the second wire pattern, a second gate structure spaced apart from the first gate structure in the first direction, a first source/drain region between the first gate structure and the second gate structure, a first spacer between a bottom surface of the first source/drain region and the substrate, a first source/drain contact on the first source/drain region, and a second spacer between the first source/drain contact and the first gate structure.

公开(公告)号：US10128379B2

公开(公告)日：2018-11-13

申请号：US15647903

申请日：2017-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Min Song ,  Woo Seok Park ,  Geum Jong Bae ,  Dong Il Bae ,  Jung Gil Yang

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02

Abstract: A semiconductor device includes a substrate; protruding portions extending in parallel to each other on the substrate; nanowires provided on the protruding portions and separated from each other; gate electrodes provided on the substrate and surrounding the nanowires; source/drain regions provided on the protruding portions and sides of each of the gate electrodes, the source/drain regions being in contact with the nanowires; and first voids provided between the source/drain regions and the protruding portions.