Abstract:
A light emitting film including a plurality of quantum dots and an electronic device including the same. The plurality of quantum dots constitute at least a portion of a surface of the light emitting film, the plurality of quantum dots do not include cadmium, and the at least a portion of a surface of the light emitting film includes a metal halide bound to at least one quantum dot of the plurality of quantum dots.
Abstract:
An electroluminescent device and a display device includes the same are disclosed. The electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode and including a first organic material having a conjugated structure; an emission layer disposed directly on the hole transport layer and including a plurality of light emitting particles; an electron transport layer disposed on the emission layer; and a second electrode disposed on the electron transport layer, wherein at least one of the light emitting particles includes a core and a hydrophilic ligand attached to a surface of the core, wherein the hole transport layer has a first thickness and a second thickness at any two point locations, and the first thickness and the second thickness satisfy Equation 1.Equation 1 is described in the detailed description.
Abstract:
A compound represented by Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed. In Chemical Formula 1, each substituent is the same as defined in the detailed description.
Abstract:
A compound for an organic photoelectric device is represented by Chemical Formula 1. An organic photoelectric device includes a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode, the active layer including the compound represented by Chemical Formula 1.
Abstract:
Disclosed are an organic photoelectronic device including a first electrode and a second electrode facing each other and an active layer interposed between the first electrode and the second electrode, wherein the active layer includes a p-type semiconductor compound represented by the formula C22R1—R12O2N2 and an n-type semiconductor compound having a maximum absorption peak at a wavelength region of about 500 nm to about 600 nm, and an image sensor including the organic photoelectronic device.
Abstract:
A method of manufacturing a patterned film includes forming a first film including a semiconductor nanoparticle and an additive, wherein the additive includes a polythiol compound, the semiconductor nanoparticle includes an organic ligand (for example, on a surface thereof), and the organic ligand includes a first functional group bonded to the surface of the semiconductor nanoparticle and a carbon-carbon unsaturated bond; exposing a portion of the first film to a radiation to cause a change in a solubility of the semiconductor nanoparticle in the exposed area with respect to a first solvent; contacting the radiation treated film with the first solvent to remove at least a portion of an unexposed area of the radiation treated film to obtain a patterned film. A light emitting device includes such a patterned film as a light emitting layer.
Abstract:
An electroluminescent device including a light emitting layer disposed between a first electrode and a second electrode, and an electron transport layer disposed between the multi-layered light emitting film and the second electrode, where the multi-layered light emitting film includes a first layer and a second layer disposed on the first layer, the first layer including a plurality of first semiconductor nanoparticles surrounded by a p-type organic semiconductor polymer, and the second layer including a plurality of second semiconductor nanoparticles
Abstract:
A quantum dot device and an electronic device. The quantum dot device includes a first electrode and a second electrode, a light emitting layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the second electrode and the light emitting layer and enhancing transport of first charge carriers from the second electrode to the light emitting layer, and a buffer layer disposed between the light emitting layer and the first charge auxiliary layer and enhancing extraction of second charge carriers from the light emitting layer.
Abstract:
Provided are a light emitting device includes a first electrode and a second electrode facing each other; an emissive layer disposed between the first electrode and the second electrode and a display device including the same. The emissive layer comprises: a first emission layer disposed on the first electrode and having a hole transporting property; a second emission layer and a third emission layer disposed on the first emission layer; wherein the second emission layer comprises an organic compound having a bipolar transport property and the third emission layer has a composition different from the first emission layer and the second emission layer; wherein the first emission layer, the second emission layer, and the third emission layer comprises a plurality of quantum dots, and wherein the first emission layer, the second emission layer, and the third emission layer are configured to emit light of a same color.
Abstract:
A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes inorganic nanoparticles including an alkaline-earth metal, and an alkali metal, an alkali metal compound, or a combination thereof, and an electronic device including the quantum dot device.