公开(公告)号：US20140103969A1

公开(公告)日：2014-04-17

申请号：US13868579

申请日：2013-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-chul JEON ,  Jong-seob KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jae-joon OH ,  Jong-bong HA ,  Jai-kwang SHIN

IPC: H01L29/778 ,  H03K3/012

CPC classification number: H01L29/7781 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7782 ,  H01L29/7786 ,  H03K3/012

Abstract: According to example embodiments, a HEMT includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode spaced apart on the channel layer, a depletion-forming layer on the channel supply layer, and a plurality of gate electrodes on the depletion-forming layer between the source electrode and the drain electrode. The channel supply layer is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured to form a depletion region in the 2DEG. The plurality of gate electrodes include a first gate electrode and a second gate electrode spaced apart from each other.

Abstract translation: 根据示例性实施例，HEMT包括沟道层，沟道层上的沟道供应层，在沟道层上隔开的源电极和漏电极，沟道供应层上的耗尽形成层，以及多个 在源电极和漏电极之间的耗尽形成层上的栅电极。 通道供给层被配置为在通道层中诱导二维电子气（2DEG）。 耗尽形成层被配置为在2DEG中形成耗尽区。 多个栅电极包括彼此间隔开的第一栅电极和第二栅电极。

公开(公告)号：US20140091312A1

公开(公告)日：2014-04-03

申请号：US13927230

申请日：2013-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-chul JEON ,  Young-hwan PARK ,  Ki-yeol PARK ,  Jai-kwang SHIN ,  Jae-joon OH

IPC: H01L29/20 ,  H01L29/66

CPC classification number: H01L29/2003 ,  H01L29/205 ,  H01L29/66204 ,  H01L29/66325 ,  H01L29/861

Abstract: A power switching device includes a channel forming layer on a substrate which includes a 2-dimensional electron gas (2DEG), and a channel supply layer which corresponds to the 2DEG at the channel forming layer. A cathode is coupled to a first end of the channel supply layer and an anode is coupled to a second end of the channel supply layer. The channel forming layer further includes a plurality of depletion areas arranged in a pattern, and portions of the channel forming layer between the plurality of depletion areas are non-depletion areas.

Abstract translation: 功率开关器件包括在包括二维电子气体（2DEG）的衬底上的沟道形成层和在沟道形成层处对应于2DEG的沟道供应层。 阴极耦合到沟道供应层的第一端，并且阳极耦合到沟道供应层的第二端。 沟道形成层还包括以图案排列的多个耗尽区，并且多个耗尽区之间的沟道形成层的部分是非耗尽区。

公开(公告)号：US20140048850A1

公开(公告)日：2014-02-20

申请号：US13790319

申请日：2013-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-chul JEON ,  Young-hwan PARK ,  Ki-yeol PARK ,  Jai-kwang SHIN ,  Jae-joo OH ,  Jong-bong HA

IPC: H01L27/06 ,  H01L21/8252

CPC classification number: H01L27/0605 ,  H01L21/8252 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/32 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/872

Abstract: According to example embodiments, a semiconductor device may include a high electron mobility transistor (HEMT) on a first region of a substrate, and a diode on a second region of the substrate. The HEMT may be electrically connected to the diode. The HEMT and the diode may be formed on an upper surface of the substrate such as to be spaced apart from each other in a horizontal direction. The HEMT may include a semiconductor layer. The diode may be formed on another portion of the substrate on which the semiconductor layer is not formed. The HEMT and the diode may be cascode-connected to each other.

Abstract translation: 根据示例性实施例，半导体器件可以包括在衬底的第一区域上的高电子迁移率晶体管（HEMT）和在衬底的第二区域上的二极管。 HEMT可以电连接到二极管。 HEMT和二极管可以形成在基板的上表面上，以便在水平方向上彼此间隔开。 HEMT可以包括半导体层。 二极管可以形成在其上未形成半导体层的衬底的另一部分上。 HEMT和二极管可以彼此共源共存。

公开(公告)号：US20140021514A1

公开(公告)日：2014-01-23

申请号：US13926553

申请日：2013-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-chul JEON ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH

IPC: H01L27/06

CPC classification number: H01L27/0629 ,  H01L21/8252 ,  H01L27/0605

Abstract: A nitride-based semiconductor diode includes a substrate, a first semiconductor layer disposed on the substrate, and a second semiconductor layer disposed on the first semiconductor layer. The first and second semiconductor layers include a nitride-based semiconductor. A first portion of the second semiconductor layer may have a thickness thinner than a second portion of the second semiconductor layer. The diode may further include an insulating layer disposed on the second semiconductor layer, a first electrode covering the first portion of the second semiconductor layer and forming an ohmic contact with the first semiconductor layer and the second semiconductor layer, and a second electrode separated from the first electrode, the second electrode forming an ohmic contact with the first semiconductor layer and the second semiconductor layer.

Abstract translation: 氮化物系半导体二极管包括衬底，设置在衬底上的第一半导体层以及设置在第一半导体层上的第二半导体层。 第一和第二半导体层包括氮化物基半导体。 第二半导体层的第一部分可以具有比第二半导体层的第二部分薄的厚度。 二极管还可以包括设置在第二半导体层上的绝缘层，覆盖第二半导体层的第一部分并与第一半导体层和第二半导体层形成欧姆接触的第一电极，以及与第二半导体层分开的第二电极 第一电极，第二电极与第一半导体层和第二半导体层形成欧姆接触。