公开(公告)号：US20140240026A1

公开(公告)日：2014-08-28

申请号：US14106991

申请日：2013-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-kyu HWANG ,  Woo-chul JEON ,  Joon-yong KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Jong-bong HA

IPC: H03K17/30

CPC classification number: H03K17/063 ,  G01N27/025 ,  G01N27/08 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/7787

Abstract: According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.

Abstract translation: 根据示例性实施例，用于控制施加到高电子迁移率晶体管（HEMT）的栅电极的栅极电压的方法可以包括测量HEMT的漏电极和源电极之间的电压，并且调节栅极的电平 根据测量的电压施加到HEMT的栅电极的电压。 如果漏电极和源电极之间的电压不同于设定值，则可以调节栅电极的电平。

公开(公告)号：US20150123139A1

公开(公告)日：2015-05-07

申请号：US14258374

申请日：2014-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-seob KIM ,  In-jun HWANG ,  Jai-kwang SHIN ,  Jae-joon OH ,  Soo-gine CHONG ,  Sunk-yu HWANG

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/7787

Abstract: Provided are a high electron mobility transistor and/or a method of manufacturing the same. The high electron mobility transistor includes a channel layer, a channel supply layer formed on the channel layer to generate a two-dimensional electron gas (2DEG), a depletion forming layer formed on the channel supply layer, a gate electrode formed on the depletion forming layer, and a barrier layer formed between the depletion forming layer and the gate electrode. Holes may be prevented from being injected into the depletion forming layer from the gate electrode, thereby reducing a gate forward current.

Abstract translation: 提供高电子迁移率晶体管和/或其制造方法。 高电子迁移率晶体管包括沟道层，形成在沟道层上的沟道供应层，以产生二维电子气（2DEG），在沟道供应层上形成的耗尽形成层，形成于耗尽层上的栅电极 层，以及形成在耗尽形成层和栅电极之间的阻挡层。 可以防止孔从栅电极注入耗尽形成层，从而减小栅极正向电流。

公开(公告)号：US20140147973A1

公开(公告)日：2014-05-29

申请号：US13938580

申请日：2013-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuk-soon CHOI ,  Hong-Pyo HEO ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Jae-joon OH ,  In-jun HWANG

IPC: H01L23/00

CPC classification number: H01L24/81 ,  H01L24/02 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/73 ,  H01L24/94 ,  H01L29/4175 ,  H01L29/7786 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05567 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/11002 ,  H01L2224/11334 ,  H01L2224/1184 ,  H01L2224/11845 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16235 ,  H01L2224/73251 ,  H01L2224/81005 ,  H01L2224/94 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2924/014 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2224/023 ,  H01L2224/13

Abstract: A method of packaging power devices at a wafer level is disclosed. The method includes preparing a wafer having a plurality of nitride power devices thereon, each of the plurality of nitride power devices having a plurality of electrodes thereon; forming a polymer layer on the plurality of nitride power devices; exposing each of the electrodes from the polymer layer; forming a solder bump on the exposed electrodes; forming a molding layer covering the solder bump on the polymer layer; and removing the wafer and exposing the solder bump.

Abstract translation: 公开了一种在晶片级封装功率器件的方法。 该方法包括制备其上具有多个氮化物功率器件的晶片，所述多个氮化物功率器件中的每一个在其上具有多个电极; 在所述多个氮化物功率器件上形成聚合物层; 使聚合物层中的每一个电极露出; 在暴露的电极上形成焊料凸块; 形成覆盖聚合物层上的焊料凸点的成型层; 并移除晶片并暴露焊料凸块。

公开(公告)号：US20140021510A1

公开(公告)日：2014-01-23

申请号：US13752821

申请日：2013-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-chul JEON ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  Jong-bong HA

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

Abstract: A higher electron mobility transistor (HEMT) and a method of manufacturing the same are disclosed. According to example embodiments, the HEMT may include a channel supply layer on a channel layer, a source electrode and a drain electrode that are on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a source pad and a drain pad. The source pad and a drain pad electrically contact the source electrode and the drain electrode, respectively. At least a portion of at least one of the source pad and the drain pad extends into a corresponding one of the source electrode and drain electrode that the at least one of the source pad and the drain pad is in electrical contact therewith.

Abstract translation: 公开了一种较高电子迁移率晶体管（HEMT）及其制造方法。 根据示例实施例，HEMT可以包括位于沟道层和沟道供应层中的至少一个上的沟道层，源电极和漏电极上的沟道供应层，源极和源极之间的栅电极 漏电极，以及源极焊盘和漏极焊盘。 源极焊盘和漏极焊盘分别与源电极和漏电极电接触。 源极焊盘和漏极焊盘中的至少一个的至少一部分延伸到源电极和漏电极中的至少一个源极焊盘和漏极焊盘与其电接触的相应的一个。

公开(公告)号：US20130307026A1

公开(公告)日：2013-11-21

申请号：US13752766

申请日：2013-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun-kyu HWANG ,  Jai-kwang SHIN ,  Hyuk-soon CHOI ,  Jong-seob KIM ,  Jae-joon OH ,  Jong-bong HA ,  In-jun HWANG ,  Kyoung-yeon KIM

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

Abstract: According to example embodiments, High electron mobility transistors (HEMTs) may include a discontinuation region in a channel region. The discontinuation region may include a plurality of 2DEG unit regions that are spaced apart from one another. The discontinuation region may be formed at an interface between two semiconductor layers or adjacent to the interface. The discontinuation region may be formed by an uneven structure or a plurality of recess regions or a plurality of ion implantation regions. The plurality of 2DEG unit regions may have a nanoscale structure. The plurality of 2DEG unit regions may be formed in a dot pattern, a stripe pattern, or a staggered pattern.

Abstract translation: 根据示例实施例，高电子迁移率晶体管（HEMT）可以包括沟道区域中的不连续区域。 不连续区域可以包括彼此间隔开的多个2DEG单元区域。 不连续区域可以形成在两个半导体层之间或与界面相邻的界面处。 不连续区域可以由不平坦结构或多个凹陷区域或多个离子注入区域形成。 多个2DEG单元区域可以具有纳米尺度结构。 多个2DEG单元区域可以形成为点图案，条纹图案或交错图案。

公开(公告)号：US20130146890A1

公开(公告)日：2013-06-13

申请号：US13707162

申请日：2012-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-jun HWANG ,  Jae-joon OH ,  Jae-won LEE ,  Hyo-ji CHOI ,  Jong-bong HA

IPC: H01L27/06 ,  H01L29/778

CPC classification number: H01L27/0629 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787

Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a reverse diode gate structure on the second semiconductor layer. A source and a drain may be on at least one of the first semiconductor layer and the second semiconductor layer. A gate electrode may be on the reverse diode gate structure.

Abstract translation: 根据示例实施例的高电子迁移率晶体管（HEMT）包括第一半导体层，第一半导体层上的第二半导体层和第二半导体层上的反向二极管栅极结构。 源极和漏极可以在第一半导体层和第二半导体层中的至少一个上。 栅电极可以在反向二极管栅极结构上。

公开(公告)号：US20140291728A1

公开(公告)日：2014-10-02

申请号：US14224769

申请日：2014-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-jun HWANG ,  Jong-seob KIM ,  Jae-joon OH

IPC: H01L29/06 ,  H01L29/778

CPC classification number: H01L29/778 ,  H01L29/1608 ,  H01L29/402 ,  H01L29/7787

Abstract: According to example embodiments, a power device chip includes a plurality of unit power devices classified into a plurality of sectors, a first pad and a second pad. At least one of the first and second pads is divided into a number of pad parts equal to a number of the plurality of sectors. The first pad is connected to first electrodes of the plurality of unit power devices, and the second pad is connected to second electrodes of the plurality of unit power devices. The unit power devices may be diodes. The power device chip may further include third electrodes in the plurality of unit power devices, and a third pad may be connected to the third electrodes. In this case, the unit power devices may be high electron mobility transistors (HEMTs). Pad parts connected to defective sectors may be excluded from bonding.

Abstract translation: 根据示例性实施例，功率器件芯片包括分为多个扇区的多个单位功率器件，第一焊盘和第二焊盘。 第一和第二焊盘中的至少一个被分成等于多个扇区的数量的多个焊盘部分。 第一焊盘连接到多个单元功率器件的第一电极，第二焊盘连接到多个单元功率器件的第二电极。 单元功率器件可以是二极管。 功率器件芯片还可以包括多个单位功率器件中的第三电极，并且第三焊盘可以连接到第三电极。 在这种情况下，单位功率器件可以是高电子迁移率晶体管（HEMT）。 连接到缺陷扇区的焊盘部件可能被排除在接合之外。

公开(公告)号：US20140103969A1

公开(公告)日：2014-04-17

申请号：US13868579

申请日：2013-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-chul JEON ,  Jong-seob KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jae-joon OH ,  Jong-bong HA ,  Jai-kwang SHIN

IPC: H01L29/778 ,  H03K3/012

CPC classification number: H01L29/7781 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7782 ,  H01L29/7786 ,  H03K3/012

Abstract: According to example embodiments, a HEMT includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode spaced apart on the channel layer, a depletion-forming layer on the channel supply layer, and a plurality of gate electrodes on the depletion-forming layer between the source electrode and the drain electrode. The channel supply layer is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured to form a depletion region in the 2DEG. The plurality of gate electrodes include a first gate electrode and a second gate electrode spaced apart from each other.

Abstract translation: 根据示例性实施例，HEMT包括沟道层，沟道层上的沟道供应层，在沟道层上隔开的源电极和漏电极，沟道供应层上的耗尽形成层，以及多个 在源电极和漏电极之间的耗尽形成层上的栅电极。 通道供给层被配置为在通道层中诱导二维电子气（2DEG）。 耗尽形成层被配置为在2DEG中形成耗尽区。 多个栅电极包括彼此间隔开的第一栅电极和第二栅电极。

公开(公告)号：US20140091312A1

公开(公告)日：2014-04-03

申请号：US13927230

申请日：2013-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-chul JEON ,  Young-hwan PARK ,  Ki-yeol PARK ,  Jai-kwang SHIN ,  Jae-joon OH

IPC: H01L29/20 ,  H01L29/66

CPC classification number: H01L29/2003 ,  H01L29/205 ,  H01L29/66204 ,  H01L29/66325 ,  H01L29/861

Abstract: A power switching device includes a channel forming layer on a substrate which includes a 2-dimensional electron gas (2DEG), and a channel supply layer which corresponds to the 2DEG at the channel forming layer. A cathode is coupled to a first end of the channel supply layer and an anode is coupled to a second end of the channel supply layer. The channel forming layer further includes a plurality of depletion areas arranged in a pattern, and portions of the channel forming layer between the plurality of depletion areas are non-depletion areas.

Abstract translation: 功率开关器件包括在包括二维电子气体（2DEG）的衬底上的沟道形成层和在沟道形成层处对应于2DEG的沟道供应层。 阴极耦合到沟道供应层的第一端，并且阳极耦合到沟道供应层的第二端。 沟道形成层还包括以图案排列的多个耗尽区，并且多个耗尽区之间的沟道形成层的部分是非耗尽区。

公开(公告)号：US20140027779A1

公开(公告)日：2014-01-30

申请号：US13953165

申请日：2013-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-jun HWANG ,  Hyo-ji CHOI ,  Jong-seob KIM ,  Jae-joon OH

IPC: H01L29/778

CPC classification number: H01L29/778 ,  H01L29/06 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/42364 ,  H01L29/7787

Abstract: According to example embodiments, a high electron mobility transistor includes: a channel layer including a 2-dimensional electron gas (2DEG); a contact layer on the channel layer; a channel supply layer on the contact layer; a gate electrode on a portion of the channel layer; and source and drain electrodes on at least one of the channel layer, the contact layer, and the channel supply layer. The contact layer is configured to form an ohmic contact on the channel layer. The contact layer is n-type doped and contains a Group III-V compound semiconductor. The source electrode and the drain electrode are spaced apart from opposite sides of the gate electrode.

Abstract translation: 根据示例性实施例，高电子迁移率晶体管包括：包括二维电子气（2DEG）的沟道层; 沟道层上的接触层; 接触层上的沟道供应层; 沟道层的一部分上的栅电极; 以及在沟道层，接触层和沟道供应层中的至少一个上的源极和漏极。 接触层被配置为在沟道层上形成欧姆接触。 接触层为n型掺杂并含有III-V族化合物半导体。 源电极和漏电极与栅电极的相对侧间隔开。