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    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    高电子移动性晶体管及其制造方法

    公开(公告)号：US20140021510A1

    公开(公告)日：2014-01-23

    申请号：US13752821

    申请日：2013-01-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo-chul JEON ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  Jong-bong HA

    IPC: H01L29/778 ,  H01L29/66

    CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

    Abstract: A higher electron mobility transistor (HEMT) and a method of manufacturing the same are disclosed. According to example embodiments, the HEMT may include a channel supply layer on a channel layer, a source electrode and a drain electrode that are on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a source pad and a drain pad. The source pad and a drain pad electrically contact the source electrode and the drain electrode, respectively. At least a portion of at least one of the source pad and the drain pad extends into a corresponding one of the source electrode and drain electrode that the at least one of the source pad and the drain pad is in electrical contact therewith.

    Abstract translation: 公开了一种较高电子迁移率晶体管（HEMT）及其制造方法。 根据示例实施例，HEMT可以包括位于沟道层和沟道供应层中的至少一个上的沟道层，源电极和漏电极上的沟道供应层，源极和源极之间的栅电极 漏电极，以及源极焊盘和漏极焊盘。 源极焊盘和漏极焊盘分别与源电极和漏电极电接触。 源极焊盘和漏极焊盘中的至少一个的至少一部分延伸到源电极和漏电极中的至少一个源极焊盘和漏极焊盘与其电接触的相应的一个。

    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    高电子移动性晶体管及其制造方法

    公开(公告)号：US20140061725A1

    公开(公告)日：2014-03-06

    申请号：US13754047

    申请日：2013-01-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ki-yeol PARK ,  Woo-chul JEON ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jong-bong HA ,  Sun-kyu HWANG

    IPC: H01L29/778 ,  H01L29/66

    CPC classification number: H01L29/778 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

    Abstract: According to example embodiments, a higher electron mobility transistor (HEMT) may include a first channel layer, a second channel layer on the first channel layer, a channel supply on the second channel layer, a drain electrode spaced apart from the first channel layer, a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer, and a gate electrode unit between the source electrode and the drain electrode. The gate electrode unit may have a normally-off structure. The first and second channel layer form a PN junction with each other. The drain electrode contacts at least one of the second channel layer and the channel supply layer.

    Abstract translation: 根据示例实施例，较高电子迁移率晶体管（HEMT）可以包括第一沟道层，第一沟道层上的第二沟道层，第二沟道层上的沟道电源，与第一沟道层间隔开的漏极， 与第一沟道层接触并与第二沟道层和沟道供给层中的至少一个接触的源电极以及源电极和漏电极之间的栅电极单元。 栅电极单元可以具有常关结构。 第一和第二沟道层彼此形成PN结。 漏电极接触第二沟道层和沟道供应层中的至少一个。

    NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTOR
    4.
    发明申请
    NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTOR 有权
    正常高电子移动晶体管

    公开(公告)号：US20140091363A1

    公开(公告)日：2014-04-03

    申请号：US13874920

    申请日：2013-05-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo-chul JEON ,  Young-hwan PARK ,  Jae-joon OH ,  Kyoung-yeon KIM ,  Joon-yong KIM ,  Ki-yeol PARK ,  Jai-kwang SHIN ,  Sun-kyu HWANG

    IPC: H01L29/778

    CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7786

    Abstract: According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.

    Abstract translation: 根据示例性实施例，常关高电子迁移率晶体管（HEMT）包括：具有第一氮化物半导体的沟道层，沟道层上的沟道供应层，沟道供应层侧面的源电极和漏电极 沟道供应层上的耗尽形成层，耗尽型层上的栅极绝缘层和栅极绝缘层上的栅电极。 沟道供给层包括第二氮化物半导体，并且被配置为在沟道层中诱导二维电子气（2DEG）。 耗尽形成层被配置为具有至少两个厚度，并且被配置为在2DEG的至少部分区域中形成耗尽区。 栅电极与耗尽形成层接触。

    NITRIDE SEMICONDUCTOR BASED POWER CONVERTING DEVICE
    5.
    发明申请
    NITRIDE SEMICONDUCTOR BASED POWER CONVERTING DEVICE 有权
    基于氮化物半导体的功率转换器件

    公开(公告)号：US20140091311A1

    公开(公告)日：2014-04-03

    申请号：US13921466

    申请日：2013-06-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo-chul JEON ,  Baik-woo LEE ,  Jai-kwang SHIN ,  Jae-joon OH

    IPC: H01L29/205

    CPC classification number: H01L29/205 ,  H01L21/2654 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0629 ,  H01L28/10 ,  H01L28/20 ,  H01L29/0642 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/86 ,  H01L29/94

    Abstract: A nitride semiconductor based power converting device includes a nitride semiconductor based power transistor, and at least one nitride semiconductor based passive device. The passive device and the power transistor respectively include a channel layer including a first nitride semiconductor material, and a channel supply layer on the channel layer including a second nitride semiconductor material to induce a 2-dimensional electron gas (2DEG) at the channel layer. The passive device may be a resistor, an inductor, or a capacitor.

    Abstract translation: 一种基于氮化物半导体的功率转换器件包括基于氮化物半导体的功率晶体管和至少一个氮化物半导体的无源器件。 无源器件和功率晶体管分别包括包括第一氮化物半导体材料的沟道层和在沟道层上的沟道供应层，该沟道层包括在沟道层处引起二维电子气（2DEG）的第二氮化物半导体材料。 无源器件可以是电阻器，电感器或电容器。

    ELECTRONIC DEVICE INCLUDING TRANSISTOR AND METHOD OF OPERATING THE SAME
    6.
    发明申请
    ELECTRONIC DEVICE INCLUDING TRANSISTOR AND METHOD OF OPERATING THE SAME 有权
    包括晶体管的电子器件及其操作方法

    公开(公告)号：US20140049296A1

    公开(公告)日：2014-02-20

    申请号：US13789884

    申请日：2013-03-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo-chul JEON ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH

    IPC: H03K3/012

    CPC classification number: H03K3/012 ,  H03K17/6871 ,  H03K2017/6875

    Abstract: An electronic device may include a first transistor having a normally-on characteristic; a second transistor connected to the first transistor and having a normally-off characteristic; a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor; and a switching unit configured to apply a switching signal to the second transistor. The first transistor may be a high electron mobility transistor (HEMT). The second transistor may be a field-effect transistor (FET). The constant voltage application unit may include a diode connected to the gate of the first transistor; and a constant current source connected to the diode.

    Abstract translation: 电子设备可以包括具有常开特性的第一晶体管; 连接到第一晶体管并具有常关特性的第二晶体管; 恒电压施加单元，被配置为向所述第一晶体管的栅极施加恒定电压; 以及切换单元，被配置为向第二晶体管施加切换信号。 第一晶体管可以是高电子迁移率晶体管（HEMT）。 第二晶体管可以是场效应晶体管（FET）。 恒压施加单元可以包括连接到第一晶体管的栅极的二极管; 和连接到二极管的恒流源。

    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF DRIVING THE SAME
    8.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF DRIVING THE SAME 有权
    高电子移动性晶体管及其驱动方法

    公开(公告)号：US20140103969A1

    公开(公告)日：2014-04-17

    申请号：US13868579

    申请日：2013-04-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo-chul JEON ,  Jong-seob KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jae-joon OH ,  Jong-bong HA ,  Jai-kwang SHIN

    IPC: H01L29/778 ,  H03K3/012

    CPC classification number: H01L29/7781 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7782 ,  H01L29/7786 ,  H03K3/012

    Abstract: According to example embodiments, a HEMT includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode spaced apart on the channel layer, a depletion-forming layer on the channel supply layer, and a plurality of gate electrodes on the depletion-forming layer between the source electrode and the drain electrode. The channel supply layer is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured to form a depletion region in the 2DEG. The plurality of gate electrodes include a first gate electrode and a second gate electrode spaced apart from each other.

    Abstract translation: 根据示例性实施例，HEMT包括沟道层，沟道层上的沟道供应层，在沟道层上隔开的源电极和漏电极，沟道供应层上的耗尽形成层，以及多个 在源电极和漏电极之间的耗尽形成层上的栅电极。 通道供给层被配置为在通道层中诱导二维电子气（2DEG）。 耗尽形成层被配置为在2DEG中形成耗尽区。 多个栅电极包括彼此间隔开的第一栅电极和第二栅电极。

    POWER SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    POWER SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    电源开关装置及其制造方法

    公开(公告)号：US20140091312A1

    公开(公告)日：2014-04-03

    申请号：US13927230

    申请日：2013-06-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo-chul JEON ,  Young-hwan PARK ,  Ki-yeol PARK ,  Jai-kwang SHIN ,  Jae-joon OH

    IPC: H01L29/20 ,  H01L29/66

    CPC classification number: H01L29/2003 ,  H01L29/205 ,  H01L29/66204 ,  H01L29/66325 ,  H01L29/861

    Abstract: A power switching device includes a channel forming layer on a substrate which includes a 2-dimensional electron gas (2DEG), and a channel supply layer which corresponds to the 2DEG at the channel forming layer. A cathode is coupled to a first end of the channel supply layer and an anode is coupled to a second end of the channel supply layer. The channel forming layer further includes a plurality of depletion areas arranged in a pattern, and portions of the channel forming layer between the plurality of depletion areas are non-depletion areas.

    Abstract translation: 功率开关器件包括在包括二维电子气体（2DEG）的衬底上的沟道形成层和在沟道形成层处对应于2DEG的沟道供应层。 阴极耦合到沟道供应层的第一端，并且阳极耦合到沟道供应层的第二端。 沟道形成层还包括以图案排列的多个耗尽区，并且多个耗尽区之间的沟道形成层的部分是非耗尽区。

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