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    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    高电子移动性晶体管及其制造方法

    公开(公告)号：US20140061725A1

    公开(公告)日：2014-03-06

    申请号：US13754047

    申请日：2013-01-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ki-yeol PARK ,  Woo-chul JEON ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jong-bong HA ,  Sun-kyu HWANG

    IPC: H01L29/778 ,  H01L29/66

    CPC classification number: H01L29/778 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

    Abstract: According to example embodiments, a higher electron mobility transistor (HEMT) may include a first channel layer, a second channel layer on the first channel layer, a channel supply on the second channel layer, a drain electrode spaced apart from the first channel layer, a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer, and a gate electrode unit between the source electrode and the drain electrode. The gate electrode unit may have a normally-off structure. The first and second channel layer form a PN junction with each other. The drain electrode contacts at least one of the second channel layer and the channel supply layer.

    Abstract translation: 根据示例实施例，较高电子迁移率晶体管（HEMT）可以包括第一沟道层，第一沟道层上的第二沟道层，第二沟道层上的沟道电源，与第一沟道层间隔开的漏极， 与第一沟道层接触并与第二沟道层和沟道供给层中的至少一个接触的源电极以及源电极和漏电极之间的栅电极单元。 栅电极单元可以具有常关结构。 第一和第二沟道层彼此形成PN结。 漏电极接触第二沟道层和沟道供应层中的至少一个。

    HIGH ELECTRON MOBILITY TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING THE SAME
    3.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING THE SAME 有权
    高电子移动性晶体管，其制造方法和包括其的电子器件

    公开(公告)号：US20150048421A1

    公开(公告)日：2015-02-19

    申请号：US14282466

    申请日：2014-05-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young-hwan PARK ,  Jai-kwang SHIN ,  Ki-yeol PARK ,  Jae-joon OH ,  Woo-chul JEON ,  Hyo-ji CHOI

    IPC: H01L29/778 ,  H01L29/66

    CPC classification number: H01L29/1058 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787

    Abstract: Provided are high electron mobility transistors (HEMTs), methods of manufacturing the HEMTs, and electronic devices including the HEMTs. An HEMT may include an impurity containing layer, a partial region of which is selectively activated. The activated region of the impurity containing layer may be used as a depletion forming element. Non-activated regions may be disposed at opposite side of the activated region in the impurity containing layer. A hydrogen content of the activated region may be lower than the hydrogen content of the non-activated region. In another example embodiment, an HEMT may include a depletion forming element that includes a plurality of regions, and properties (e.g., doping concentrations) of the plurality of regions may be changed in a horizontal direction.

    Abstract translation: 提供高电子迁移率晶体管（HEMT），制造HEMT的方法以及包括HEMT的电子器件。 HEMT可以包括含有杂质的层，其部分区域被选择性地活化。 含杂层的活化区域可以用作耗尽形成元件。 非活化区域可以设置在杂质含有层中的活化区域的相对侧。 活化区域的氢含量可能低于非活化区域的氢含量。 在另一个示例性实施例中，HEMT可以包括包含多个区域的耗尽形成元件，并且可以在水平方向上改变多个区域的特性（例如，掺杂浓度）。

    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    高电子移动性晶体管及其制造方法

    公开(公告)号：US20140151749A1

    公开(公告)日：2014-06-05

    申请号：US14091822

    申请日：2013-11-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo-chul JEON ,  Jong-seob KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  In-jun HWANG

    IPC: H01L29/778 ,  H01L21/02 ,  H01L29/66

    CPC classification number: H01L21/02109 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/8613

    Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer; a channel supply layer on the channel layer; a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer; a gate electrode on a part of the channel supply layer between the source electrode and the drain electrode; a first depletion-forming layer between the gate electrode and the channel supply layer; and a at least one second depletion-forming layer on the channel supply layer between the gate electrode and the drain electrode. The at least one second depletion-forming layer is electrically connected to the source electrode.

    Abstract translation: 根据示例性实施例，高电子迁移率晶体管（HEMT）包括沟道层; 通道层上的通道供应层; 在所述沟道层和所述沟道供给层之一上彼此隔开的源电极和漏电极; 源电极和漏电极之间的沟道供给层的一部分上的栅电极; 在栅电极和沟道供应层之间的第一耗尽层; 以及在栅电极和漏电极之间的沟道供应层上的至少一个第二耗尽层。 所述至少一个第二耗尽形成层电连接到所述源电极。

    HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING PLURALITY OF GATE ELECTRODES
    5.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING PLURALITY OF GATE ELECTRODES 有权
    高电位移动晶体管，包括门极电极的多孔性

    公开(公告)号：US20140151747A1

    公开(公告)日：2014-06-05

    申请号：US14018833

    申请日：2013-09-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo-chul JEON ,  Young-hwan PARK ,  Ki-yeol PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Jong-bong HA ,  Sun-kyu HWANG

    IPC: H01L29/778

    CPC classification number: H01L29/42316 ,  H01L29/2003 ,  H01L29/7787

    Abstract: According to example embodiments, a high electron mobility transistor includes: a channel layer including a first semiconductor material; a channel supply layer on the channel layer and configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, the channel supply layer including a second semiconductor material; source and drain electrodes spaced apart from each other on the channel layer, and an upper surface of the channel supply layer defining a gate electrode receiving part; a first gate electrode; and at least one second gate electrode spaced apart from the first gate electrode and in the gate electrode receiving part. The first gate electrode may be in the gate electrode receiving part and between the source electrode and the drain electrode. The at least one second gate electrode may be between the source electrode and the first gate electrode.

    Abstract translation: 根据示例性实施例，高电子迁移率晶体管包括：包括第一半导体材料的沟道层; 沟道供应层，其被配置为在所述沟道层中产生二维电子气（2DEG），所述沟道供给层包括第二半导体材料; 源极和漏极彼此间隔开，并且沟道供应层的上表面限定栅电极接收部分; 第一栅电极; 以及与第一栅电极和栅电极接收部分间隔开的至少一个第二栅电极。 第一栅电极可以在栅极电极接收部分中，并且在源电极和漏电极之间。 所述至少一个第二栅电极可以在所述源电极和所述第一栅电极之间。

    HIGH ELECTRON MOBILITY TRANSISTOR
    6.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR 有权
    高电子移动晶体管

    公开(公告)号：US20140042449A1

    公开(公告)日：2014-02-13

    申请号：US13732746

    申请日：2013-01-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo-chul JEON ,  Jong-seob KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Jong-bong HA ,  Sun-kyu HWANG

    IPC: H01L29/778 ,  H01L29/20

    CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/7786

    Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.

    Abstract translation: 根据示例性实施例，高电子迁移率晶体管（HEMT）包括在通道层中的二维电子气体（2DEG），沟道供应层侧面的源电极和漏电极 在沟道供给层上并与源电极接触的耗尽型层，耗尽型层上的栅极绝缘层和栅极绝缘层上的栅电极。 耗尽形成层在2DEG中形成耗尽区。

    ELECTRONIC DEVICE AND CONTROL METHOD THEREOF
    7.
    发明申请
    ELECTRONIC DEVICE AND CONTROL METHOD THEREOF 审中-公开

    公开(公告)号：US20200272946A1

    公开(公告)日：2020-08-27

    申请号：US16650083

    申请日：2018-05-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyoung-hoon KIM ,  Young-hwan PARK ,  Dong-kwan SUH ,  Keshava Prasad NAGARAJA ,  Dae-hyun KIM ,  Suk-jin KIM ,  Han-su CHO ,  Hyun-jung KIM

    IPC: G06N20/10 ,  G06N3/04 ,  G06N3/08

    Abstract: Disclosed is an electronic device. The An electronic device including a storage, and a processor configured to perform convolution processing on target data and kernel data based on stride information that indicates an interval at which the kernel data is applied to the target data stored in the storage, in which the processor is further configured to divide the target data into a plurality of pieces of sub-data based on first stride information, perform the convolution processing on the plurality of pieces of sub-data and a plurality of pieces of sub-kernel data respectively corresponding to the plurality of pieces of sub-data based on second stride information that is different from the first stride information, and combine a plurality of processing results, the plurality of pieces of sub-kernel data are obtained by dividing the kernel data based on the first stride information, and the second stride information indicates that the interval at which the kernel data is applied to the target data is 1.

    NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTOR
    8.
    发明申请
    NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTOR 有权
    正常高电子移动晶体管

    公开(公告)号：US20140091363A1

    公开(公告)日：2014-04-03

    申请号：US13874920

    申请日：2013-05-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo-chul JEON ,  Young-hwan PARK ,  Jae-joon OH ,  Kyoung-yeon KIM ,  Joon-yong KIM ,  Ki-yeol PARK ,  Jai-kwang SHIN ,  Sun-kyu HWANG

    IPC: H01L29/778

    CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7786

    Abstract: According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.

    Abstract translation: 根据示例性实施例，常关高电子迁移率晶体管（HEMT）包括：具有第一氮化物半导体的沟道层，沟道层上的沟道供应层，沟道供应层侧面的源电极和漏电极 沟道供应层上的耗尽形成层，耗尽型层上的栅极绝缘层和栅极绝缘层上的栅电极。 沟道供给层包括第二氮化物半导体，并且被配置为在沟道层中诱导二维电子气（2DEG）。 耗尽形成层被配置为具有至少两个厚度，并且被配置为在2DEG的至少部分区域中形成耗尽区。 栅电极与耗尽形成层接触。

    ELECTRONIC DEVICE INCLUDING TRANSISTOR AND METHOD OF OPERATING THE SAME
    9.
    发明申请
    ELECTRONIC DEVICE INCLUDING TRANSISTOR AND METHOD OF OPERATING THE SAME 有权
    包括晶体管的电子器件及其操作方法

    公开(公告)号：US20140049296A1

    公开(公告)日：2014-02-20

    申请号：US13789884

    申请日：2013-03-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo-chul JEON ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH

    IPC: H03K3/012

    CPC classification number: H03K3/012 ,  H03K17/6871 ,  H03K2017/6875

    Abstract: An electronic device may include a first transistor having a normally-on characteristic; a second transistor connected to the first transistor and having a normally-off characteristic; a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor; and a switching unit configured to apply a switching signal to the second transistor. The first transistor may be a high electron mobility transistor (HEMT). The second transistor may be a field-effect transistor (FET). The constant voltage application unit may include a diode connected to the gate of the first transistor; and a constant current source connected to the diode.

    Abstract translation: 电子设备可以包括具有常开特性的第一晶体管; 连接到第一晶体管并具有常关特性的第二晶体管; 恒电压施加单元，被配置为向所述第一晶体管的栅极施加恒定电压; 以及切换单元，被配置为向第二晶体管施加切换信号。 第一晶体管可以是高电子迁移率晶体管（HEMT）。 第二晶体管可以是场效应晶体管（FET）。 恒压施加单元可以包括连接到第一晶体管的栅极的二极管; 和连接到二极管的恒流源。

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