公开(公告)号：US20130292784A1

公开(公告)日：2013-11-07

申请号：US13934998

申请日：2013-07-03

Applicant: Seagate Technology LLC

Inventor： Haiwen Xi ,  Yuankai Zheng ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Pat J. Ryan

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

Abstract: An apparatus and method for enhancing data writing and retention to a magnetic memory element, such as in a non-volatile data storage array. In accordance with various embodiments, a programmable memory element has a reference layer and a storage layer. The reference layer is provided with a fixed magnetic orientation. The storage layer is programmed to have a first region with a magnetic orientation antiparallel to said fixed magnetic orientation, and a second region with a magnetic orientation parallel to said fixed magnetic orientation. A thermal assist layer may be incorporated into the memory element to enhance localized heating of the storage layer to aid in the transition of the first region from parallel to antiparallel magnetic orientation during a write operation.

Abstract translation: 一种用于增强对诸如非易失性数据存储阵列中的磁存储元件的数据写入和保持的装置和方法。 根据各种实施例，可编程存储元件具有参考层和存储层。 参考层具有固定的磁性取向。 存储层被编程为具有与所述固定磁性取向反平行的磁性取向的第一区域和具有与所述固定磁性取向平行的磁性取向的第二区域。 可以将热辅助层结合到存储元件中以增强存储层的局部加热，以帮助在写入操作期间第一区域从平行转变为反平行磁取向。

公开(公告)号：US20130228884A1

公开(公告)日：2013-09-05

申请号：US13857410

申请日：2013-04-05

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Yuankai Zheng ,  Zheng Gao ,  Wonjoon Jung ,  Xuebing Feng ,  Xiaohue Lou ,  Haiwen Xi

IPC: H01L43/02

CPC classification number: H01L43/02 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01L43/08

Abstract: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.

Abstract translation: 具有铁磁自由层和铁磁性固定参考层的磁性隧道结，每个具有面外磁各向异性和面外磁化取向，所述铁磁自由层可通过自旋扭矩切换。 磁性隧道结包括邻近自由层的铁磁性辅助层，辅助层具有小于700Oe的低磁各向异性，并定位成在自由层上施加磁场。