DISPLAY DEVICE RESISTANT TO IMPACT
    21.
    发明申请

    公开(公告)号:US20210135156A1

    公开(公告)日:2021-05-06

    申请号:US16672786

    申请日:2019-11-04

    Abstract: A light-emitting device includes a housing layer, a display located adjacent the housing layer and formed of a plurality of layers including a substrate layer, a window layer formed adjacent the display opposite the housing layer and bonded to the display, and an interface layer that is disposed between the substrate layer and the housing layer and enables a lateral distortion between the display and the housing layer. The interface layer may be configured such that a first resistance to shear between the display and the window is greater than a second resistance to shear between the substrate layer and the housing layer.

    Pixel circuit using direct charging and that performs light-emitting device compensation

    公开(公告)号:US10762843B2

    公开(公告)日:2020-09-01

    申请号:US15937965

    申请日:2018-03-28

    Abstract: A display system includes a display panel comprising a plurality of pixel circuits, and a measurement and data processing unit that is external to the display panel. Each pixel circuit includes a light-emitting device having a first terminal connected to a first voltage supply and a second terminal opposite from the first terminal; a first transistor connected between a data voltage supply line from the measurement and data processing unit and the second terminal of the light emitting device; and a second transistor connected between the second terminal of the light-emitting device and a sample line to the measurement and data processing unit. The measurement and data processing unit samples a measured voltage at the second terminal of the light-emitting device through the sample line and outputs a data voltage to the light-emitting device based on the measured voltage to compensate variations in properties of the light-emitting device.

    QUANTUM DOT LED STRUCTURE WITH ENHANCED EMISSION

    公开(公告)号:US20200161585A1

    公开(公告)日:2020-05-21

    申请号:US16193183

    申请日:2018-11-16

    Abstract: A light-emitting device for use in a display device has enhanced directional light emission, and enhanced on-axis light emission in particular. A light-emitting device includes a layer structure that includes from a non-emitting side: a first electrode layer; a first charge transport layer; an emissive layer; a second charge transport layer; a second electrode layer; an optically transparent layer; and a partially transmitting reflector layer. The light-emitting device comprises a plurality of regions and each region emits light of a different wavelength, such as for example red, green, and blue light-emitting regions. The optically transparent layer is present in at least one of the plurality of regions. The optically transparent layer may be present in more than one of the plurality of regions, and a thickness of the optically transparent layer may differ in different regions to optimize light emission at different wavelengths. The light-emitting device may include a scattering layer that scatters the emitted light, which may be switchable to permit different viewing angle display modes.

    High efficiency quantum dot LED structure

    公开(公告)号:US10522787B1

    公开(公告)日:2019-12-31

    申请号:US16200817

    申请日:2018-11-27

    Abstract: A light-emitting device maximizes optical efficiency when the emissive layer is high refractive index material. Said device includes an emissive layer; a first electrode and a second electrode from which charges are generated; a first charge transport layer that injects charges from the first electrode into the emissive layer; and a second charge transport layer that injects charges from the second electrode into the emissive layer. A Fresnel reflection value at boundaries between the emissive layer and at least one of the first and second charge transport layers is from 5% through 30%, and at least one of the charge transport layers satisfies a half wavelength condition of having a thickness that is equal to within twenty percent of ½ of one wavelength of an integer multiple of ½ of one wavelength in the charge transport layer material within a bandwidth of emission of the emissive layer.

    TFT pixel threshold voltage compensation circuit with data voltage applied at light-emitting device

    公开(公告)号:US10475391B2

    公开(公告)日:2019-11-12

    申请号:US15935123

    申请日:2018-03-26

    Abstract: A pixel circuit for a display device includes a drive transistor configured to control an amount of current to a light-emitting device depending upon a voltage applied to a gate of the drive transistor; a second transistor connected to the gate of the drive transistor and a second terminal of the drive transistor, such that when the second transistor is in an on state the drive transistor becomes diode-connected such that the gate and the second terminal of the drive transistor are connected through the second transistor; a light-emitting device that is connected at a first node to a third terminal of the drive transistor and at a second node to a first voltage supply; a third transistor connected to the first node of the light-emitting device, which connects a data voltage to the first node of the light-emitting device; a fourth transistor that is connected between the second terminal of the drive transistor and a second voltage supply; and at least one capacitor having a first plate that is connected to the gate of the drive transistor and a second plate that is connectable to a reference signal. The pixel circuit is operable during a phase preceding the emission phase including applying a data voltage to the first node of the light-emitting device and the third terminal of the drive transistor, the data voltage being set so that a voltage across the light-emitting device is lower than a threshold voltage of the light emitting device.

    Touch sensor for display with shield

    公开(公告)号:US10452201B1

    公开(公告)日:2019-10-22

    申请号:US15942049

    申请日:2018-03-30

    Abstract: A display device includes a display panel including a plurality of sub-pixels; a shield electrode that is made of a first conductive and opaque material, is located directly on the display panel, overlaps a portion of the display panel in between a portion of the plurality of sub-pixels, and is connected to a touch sensor controller; an insulating layer that covers the shield electrode; a touch sensor electrode that is made of a second conductive and opaque material, is located on the insulating layer, overlaps a portion of the display panel in between some of the plurality of sub-pixels, and overlaps the shield electrode; and a feedline is connected to the touch sensor electrode, overlaps a portion of the display panel in between a portion of the plurality of sub-pixels that is not overlapped by the touch sensor electrode, and routes the touch sensor electrode to the touch sensor controller.

    TFT PIXEL THRESHOLD VOLTAGE COMPENSATION CIRCUIT WITH LIGHT-EMITTING DEVICE INITIALIZATION

    公开(公告)号:US20190304361A1

    公开(公告)日:2019-10-03

    申请号:US15936519

    申请日:2018-03-27

    Abstract: A pixel circuit for a display device includes a drive transistor configured to control an amount of current to a light-emitting device depending upon a voltage applied to a gate of the drive transistor; a second transistor connected to the gate of the drive transistor and a second terminal of the drive transistor such that, when the second transistor is in an on state the drive transistor becomes diode-connected such that the gate and a second terminal of the drive transistor are connected through the second transistor; a light-emitting device that is connected at a first node to the second terminal of the drive transistor and at a second node to a first voltage supply; a third transistor that is connected between an initialization voltage supply and the first node of the light-emitting device, wherein a node N1 is a connection of the second terminal of the drive transistor, the first node of the light-emitting device, and the third transistor; and at least one capacitor having a first plate that is connected to the gate of the drive transistor and a second plate that is connectable to a reference voltage supply. The pixel circuit is operable in an initialization phase to initialize circuit voltages, in a compensation phase to compensate for variations in drive transistor properties, in a programming phase to program a greyscale value to the pixel circuit, and in an emission phase in which the light-emitting device emits light corresponding to the greyscale value.

    Light-emitting device including optical cavity with low angular colour shift

    公开(公告)号:US10367162B1

    公开(公告)日:2019-07-30

    申请号:US15937960

    申请日:2018-03-28

    Abstract: A light-emitting device includes an emissive layer that emits light by recombination of first charges and second charges; a first electrode from which the first charges are supplied; a second electrode from which the second charges are supplied; a first charge transport layer that injects the first charges from the first electrode into the emissive layer; and a second charge transport layer that injects the second charges from the second electrode into the emissive layer. At least one of the charge transport layers is an absorbing charge transport layer that includes a light absorbing material that absorbs light within a portion of the emission spectrum of the light emitted by the emissive layer. The absorbing charge transport layer may be an ETL or an HTL, and may be located only between the first electrode and the emissive layer, only between the opposing second electrode and the emissive layer, or between both electrodes and the emissive layer.

    Optical sensor for fluid analysis
    30.
    发明授权

    公开(公告)号:US10139386B2

    公开(公告)日:2018-11-27

    申请号:US15383777

    申请日:2016-12-19

    Abstract: A sensor for measuring a concentration of a particular ion, molecule or atom in a fluid includes a sample handling portion for providing at least some of the fluid, a first photo-detection device, and a first light source. The first photo-detection device is configured to measure a power of light incident thereon, and the first light source includes a solid-state light emitting device. The first light source is configured to emit light having a wavelength less than 240 nanometers incident on the fluid provided by the sample handling portion, and the first photo-detection device is configured to receive light having passed through the fluid.

Patent Agency Ranking