Low resistance and reliable copper interconnects by variable doping
    22.
    发明申请
    Low resistance and reliable copper interconnects by variable doping 有权
    低电阻和可靠的铜互连可变掺杂

    公开(公告)号:US20050029659A1

    公开(公告)日:2005-02-10

    申请号:US10637105

    申请日:2003-08-08

    CPC classification number: H01L23/53238 H01L2924/0002 H01L2924/00

    Abstract: A method and system is provided for efficiently varying the composition of the metal interconnects for a semiconductor device. A metal interconnect according to the present disclosure has an intermediate layer on a dielectric material, the intermediate layer having a relatively higher concentration of an impurity metal along with a primary metal, the impurity metal having a lower reduction potential than the primary metal. The metal interconnect has a main layer of the metal alloy interconnect on top of the intermediate layer and surrounded by the intermediate layer, the main layer having a relatively higher concentration of the primary metal than the intermediate layer, wherein the intermediate and main layers of the metal alloy interconnect each maintains a material uniformity.

    Abstract translation: 提供了一种方法和系统,用于有效地改变半导体器件的金属互连的组成。 根据本公开的金属互连在电介质材料上具有中间层,中间层与主金属一起具有较高浓度的杂质金属,杂质金属具有比初级金属低的还原电位。 金属互连件在中间层的顶部具有金属合金互连的主层,被中间层包围,主层具有比中间层更高的一次金属浓度,其中,中间层和中间层的中间层和主要层 金属合金互连件均保持材料均匀性。

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