公开(公告)号：US20120021602A1

公开(公告)日：2012-01-26

申请号：US13249823

申请日：2011-09-30

申请人： Ting-Chu Ko ,  Ming-Hsing Tsai ,  Chien-Hsueh Shih

发明人： Ting-Chu Ko ,  Ming-Hsing Tsai ,  Chien-Hsueh Shih

IPC分类号： H01L21/768

CPC分类号： H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and system is provided for efficiently varying the composition of the metal interconnects for a semiconductor device. A metal interconnect according to the present disclosure has an intermediate layer on a dielectric material, the intermediate layer having a relatively higher concentration of an impurity metal along with a primary metal, the impurity metal having a lower reduction potential than the primary metal. The metal interconnect has a main layer of the metal alloy interconnect on top of the intermediate layer and surrounded by the intermediate layer, the main layer having a relatively higher concentration of the primary metal than the intermediate layer, wherein the intermediate and main layers of the metal alloy interconnect each maintains a material uniformity.

摘要翻译： 提供了一种方法和系统，用于有效地改变半导体器件的金属互连的组成。 根据本公开的金属互连在电介质材料上具有中间层，中间层与主金属一起具有较高浓度的杂质金属，杂质金属具有比初级金属低的还原电位。 金属互连件在中间层的顶部具有金属合金互连的主层，被中间层包围，主层具有比中间层更高的一次金属浓度，其中，中间层和中间层的中间层和主要层 金属合金互连件均保持材料均匀性。

公开(公告)号：US07026244B2

公开(公告)日：2006-04-11

申请号：US10637105

申请日：2003-08-08

申请人： Ting-Chu Ko ,  Ming-Hsing Tsai ,  Chien-Hsueh Shih

发明人： Ting-Chu Ko ,  Ming-Hsing Tsai ,  Chien-Hsueh Shih

IPC分类号： H01C23/48

CPC分类号： H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and system is provided for efficiently varying the composition of the metal interconnects for a semiconductor device. A metal interconnect according to the present disclosure has an intermediate layer on a dielectric material, the intermediate layer having a relatively higher concentration of an impurity metal along with a primary metal, the impurity metal having a lower reduction potential than the primary metal. The metal interconnect has a main layer of the metal alloy interconnect on top of the intermediate layer and surrounded by the intermediate layer, the main layer having a relatively higher concentration of the primary metal than the intermediate layer, wherein the intermediate and main layers of the metal alloy interconnect each maintains a material uniformity.

摘要翻译： 提供了一种方法和系统，用于有效地改变半导体器件的金属互连的组成。 根据本公开的金属互连在电介质材料上具有中间层，中间层与主金属一起具有较高浓度的杂质金属，杂质金属具有比初级金属低的还原电位。 金属互连件在中间层的顶部具有金属合金互连的主层，被中间层包围，主层具有比中间层更高的一次金属浓度，其中，中间层和中间层的中间层和主要层 金属合金互连件均保持材料均匀性。

公开(公告)号：US08053892B2

公开(公告)日：2011-11-08

申请号：US11341827

申请日：2006-01-27

申请人： Ting-Chu Ko ,  Ming-Hsing Tsai ,  Chien-Hsueh Shih

发明人： Ting-Chu Ko ,  Ming-Hsing Tsai ,  Chien-Hsueh Shih

IPC分类号： H01L23/48

CPC分类号： H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and system is provided for efficiently varying the composition of the metal interconnects for a semiconductor device. A metal interconnect according to the present disclosure has an intermediate layer on a dielectric material, the intermediate layer having a relatively higher concentration of an impurity metal along with a primary metal, the impurity metal having a lower reduction potential than the primary metal. The metal interconnect has a main layer of the metal alloy interconnect on top of the intermediate layer and surrounded by the intermediate layer, the main layer having a relatively higher concentration of the primary metal than the intermediate layer, wherein the intermediate and main layers of the metal alloy interconnect each maintains a material uniformity.

摘要翻译： 提供了一种方法和系统，用于有效地改变半导体器件的金属互连的组成。 根据本公开的金属互连在电介质材料上具有中间层，中间层与主金属一起具有较高浓度的杂质金属，杂质金属具有比初级金属低的还原电位。 金属互连件在中间层的顶部具有金属合金互连的主层，被中间层包围，主层具有比中间层更高的一次金属浓度，其中，中间层和中间层的中间层和主要层 金属合金互连件均保持材料均匀性。

公开(公告)号：US08785321B2

公开(公告)日：2014-07-22

申请号：US13249823

申请日：2011-09-30

申请人： Ting-Chu Ko ,  Ming-Hsing Tsai ,  Chien-Hsueh Shih

发明人： Ting-Chu Ko ,  Ming-Hsing Tsai ,  Chien-Hsueh Shih

IPC分类号： H01L21/4763

CPC分类号： H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and system is provided for efficiently varying the composition of the metal interconnects for a semiconductor device. A metal interconnect according to the present disclosure has an intermediate layer on a dielectric material, the intermediate layer having a relatively higher concentration of an impurity metal along with a primary metal, the impurity metal having a lower reduction potential than the primary metal. The metal interconnect has a main layer of the metal alloy interconnect on top of the intermediate layer and surrounded by the intermediate layer, the main layer having a relatively higher concentration of the primary metal than the intermediate layer, wherein the intermediate and main layers of the metal alloy interconnect each maintains a material uniformity.

摘要翻译： 提供了一种方法和系统，用于有效地改变半导体器件的金属互连的组成。 根据本公开的金属互连在电介质材料上具有中间层，中间层与主金属一起具有较高浓度的杂质金属，杂质金属具有比初级金属低的还原电位。 金属互连件在中间层的顶部具有金属合金互连的主层，被中间层包围，主层具有比中间层更高的一次金属浓度，其中，中间层和中间层的中间层和主要层 金属合金互连件均保持材料均匀性。

公开(公告)号：US20070054488A1

公开(公告)日：2007-03-08

申请号：US11341827

申请日：2006-01-27

申请人： Ting-Chu Ko ,  Ming-Hsing Tsai ,  Chien-Hsueh Shih

发明人： Ting-Chu Ko ,  Ming-Hsing Tsai ,  Chien-Hsueh Shih

IPC分类号： H01L21/4763

CPC分类号： H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and system is provided for efficiently varying the composition of the metal interconnects for a semiconductor device. A metal interconnect according to the present disclosure has an intermediate layer on a dielectric material, the intermediate layer having a relatively higher concentration of an impurity metal along with a primary metal, the impurity metal having a lower reduction potential than the primary metal. The metal interconnect has a main layer of the metal alloy interconnect on top of the intermediate layer and surrounded by the intermediate layer, the main layer having a relatively higher concentration of the primary metal than the intermediate layer, wherein the intermediate and main layers of the metal alloy interconnect each maintains a material uniformity.

摘要翻译： 提供了一种方法和系统，用于有效地改变半导体器件的金属互连的组成。 根据本公开的金属互连在电介质材料上具有中间层，中间层与主金属一起具有较高浓度的杂质金属，杂质金属具有比初级金属低的还原电位。 金属互连件在中间层的顶部具有金属合金互连的主层，被中间层包围，主层具有比中间层更高的一次金属浓度，其中，中间层和中间层的中间层和主要层 金属合金互连件均保持材料均匀性。

公开(公告)号：US20050029659A1

公开(公告)日：2005-02-10

申请号：US10637105

申请日：2003-08-08

申请人： Ting-Chu Ko ,  Ming-Hsing Tsai ,  Chien-Hsueh Shih

发明人： Ting-Chu Ko ,  Ming-Hsing Tsai ,  Chien-Hsueh Shih

IPC分类号： H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and system is provided for efficiently varying the composition of the metal interconnects for a semiconductor device. A metal interconnect according to the present disclosure has an intermediate layer on a dielectric material, the intermediate layer having a relatively higher concentration of an impurity metal along with a primary metal, the impurity metal having a lower reduction potential than the primary metal. The metal interconnect has a main layer of the metal alloy interconnect on top of the intermediate layer and surrounded by the intermediate layer, the main layer having a relatively higher concentration of the primary metal than the intermediate layer, wherein the intermediate and main layers of the metal alloy interconnect each maintains a material uniformity.

摘要翻译： 提供了一种方法和系统，用于有效地改变半导体器件的金属互连的组成。 根据本公开的金属互连在电介质材料上具有中间层，中间层与主金属一起具有较高浓度的杂质金属，杂质金属具有比初级金属低的还原电位。 金属互连件在中间层的顶部具有金属合金互连的主层，被中间层包围，主层具有比中间层更高的一次金属浓度，其中，中间层和中间层的中间层和主要层 金属合金互连件均保持材料均匀性。

公开(公告)号：US20060118422A1

公开(公告)日：2006-06-08

申请号：US11004294

申请日：2004-12-03

申请人： Ting-Chu Ko ,  Chien-Hsueh Shih ,  Minghsing Tsai

发明人： Ting-Chu Ko ,  Chien-Hsueh Shih ,  Minghsing Tsai

IPC分类号： C25D5/00 ,  H01L21/44

CPC分类号： C25D3/38 ,  C25D3/02 ,  H01L21/2885 ,  H01L21/76877

摘要： A chemical solution for an electro chemical plating process includes an electro chemical plating solution; and an additive, added in the electro chemical plating solution, substantially consisting of a polymer with one or more kinds of impurities, wherein each kind of the impurities has a density, with respect to the polymer, lower then 1019 atoms/cc.

摘要翻译： 化学电镀工艺的化学溶液包括电化学镀液; 以及添加在电化学镀液中的添加剂，其基本上由具有一种或多种杂质的聚合物组成，其中各种杂质相对于聚合物的密度低于1019原子/ cc。

公开(公告)号：US20050045485A1

公开(公告)日：2005-03-03

申请号：US10654523

申请日：2003-09-03

申请人： Chien-Hsueh Shih ,  Ting-Chu Ko ,  Minghsing Tsai

发明人： Chien-Hsueh Shih ,  Ting-Chu Ko ,  Minghsing Tsai

IPC分类号： C25D3/38 ,  C25D5/10 ,  C25D7/12 ,  C25D15/00 ,  H01L21/288 ,  H01L21/768 ,  H05K3/42 ,  C25D5/02 ,  H01L21/445

CPC分类号： H01L21/76877 ,  C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  C25D15/00 ,  H01L21/2885 ,  H05K3/423

摘要： A method for reducing or avoiding copper layer pitting in a copper electrochemical deposition process to improve deposition uniformity including providing a substrate for carrying out at least a first copper electroplating process; providing a copper electroplating solution including a deforming (antiforming) agent wherein the antiforming (deforming) agent includes at least one alkylene monomer; and, carrying out at least a first copper electroplating process to deposit at least a first copper layer.

摘要翻译： 一种用于在铜电化学沉积工艺中减少或避免铜层点蚀以改善沉积均匀性的方法，包括提供用于执行至少第一铜电镀工艺的衬底; 提供包括变形（防形）剂的铜电镀溶液，其中抗变形（变形）试剂包括至少一种亚烷基单体; 并且进行至少第一铜电镀工艺以至少沉积第一铜层。

公开(公告)号：US07771579B2

公开(公告)日：2010-08-10

申请号：US11004294

申请日：2004-12-03

申请人： Ting-Chu Ko ,  Chien-Hsueh Shih ,  Minghsing Tsai

发明人： Ting-Chu Ko ,  Chien-Hsueh Shih ,  Minghsing Tsai

IPC分类号： C25D3/38

CPC分类号： C25D3/38 ,  C25D3/02 ,  H01L21/2885 ,  H01L21/76877

摘要： A chemical solution for an electro chemical plating process includes an electro chemical plating solution; and an additive, added in the electro chemical plating solution, substantially consisting of a polymer with one or more kinds of impurities, wherein each kind of the impurities has a density, with respect to the polymer, lower then 1019 atoms/cc.

摘要翻译： 化学电镀工艺的化学溶液包括电化学镀液; 以及添加在电化学镀液中的添加剂，其基本上由具有一种或多种杂质的聚合物组成，其中各种杂质相对于聚合物的密度低于1019原子/ cc。

公开(公告)号：US20090004851A1

公开(公告)日：2009-01-01

申请号：US11770817

申请日：2007-06-29

申请人： Shau-Lin Shue ,  Ting-Chu Ko ,  Chien-Hsueh Shih

发明人： Shau-Lin Shue ,  Ting-Chu Ko ,  Chien-Hsueh Shih

IPC分类号： H01L21/02

CPC分类号： H01L21/2254 ,  H01L21/28518 ,  H01L21/288

摘要： A selective electroless plating operation provides for the selective deposition of a metal film only on exposed silicon surfaces of a semiconductor substrate and not on other surfaces such as dielectric surfaces. The plating solution includes metal ions and advantageously also includes dopant impurity ions. The pure metal or metal alloy film formed on the exposed silicon surfaces is then heat treated to form a metal silicide on the exposed silicon surfaces and to drive the dopant impurities to the interface formed between the exposed silicon surfaces and the metal silicide film.

摘要翻译： 选择性化学镀操作提供仅在半导体衬底的暴露的硅表面上而不是在诸如电介质表面的其它表面上的金属膜的选择性沉积。 电镀溶液包括金属离子，并且有利地还包括掺杂剂杂质离子。 形成在暴露的硅表面上的纯金属或金属合金膜然后被热处理以在暴露的硅表面上形成金属硅化物，并将掺杂剂杂质驱动到形成在暴露的硅表面和金属硅化物膜之间的界面。