摘要:
A chemical solution for an electro chemical plating process includes an electro chemical plating solution; and an additive, added in the electro chemical plating solution, substantially consisting of a polymer with one or more kinds of impurities, wherein each kind of the impurities has a density, with respect to the polymer, lower then 1019 atoms/cc.
摘要:
A chemical solution for an electro chemical plating process includes an electro chemical plating solution; and an additive, added in the electro chemical plating solution, substantially consisting of a polymer with one or more kinds of impurities, wherein each kind of the impurities has a density, with respect to the polymer, lower then 1019 atoms/cc.
摘要:
A method for reducing or avoiding copper layer pitting in a copper electrochemical deposition process to improve deposition uniformity including providing a substrate for carrying out at least a first copper electroplating process; providing a copper electroplating solution including a deforming (antiforming) agent wherein the antiforming (deforming) agent includes at least one alkylene monomer; and, carrying out at least a first copper electroplating process to deposit at least a first copper layer.
摘要:
A conductive polymer between two metallic layers acts a glue layer, a barrier layer or an activation seed layer. The conductive polymer layer is employed to encapsulate a copper interconnection structure to prevent copper diffusion into any overlying layers and improve adhesive characteristics between the copper and any overlying layers.
摘要:
A system and method for providing a passivation structure for semiconductor devices is provided. In an embodiment, the passivation structure comprises a first barrier layer and a second barrier layer, wherein the second barrier layer may comprise a material, such as cobalt and/or nickel, that is less pure than the first barrier layer. In another embodiment, a single gradient barrier layer is formed. In this embodiment the single gradient barrier layer exhibits a greater pure conductive material, such as cobalt and/or nickel, nearer the conductive line than near the surface.
摘要:
The top surfaces of conductive features are treated with a treatment solution before forming a passivation layer over the conductive features. The treatment solution includes a cleaning solution and a chemical grafting precursor. The treatment solution may also include a leveling and wetting agent to improve coverage uniformity of the chemical grafting precursor. The method results in a uniform passivation layer formed over conductive features across a surface of a workpiece.
摘要:
An integrated circuit includes a semiconductor substrate, a low-k dielectric layer over the semiconductor substrate, a first opening in the low-k dielectric layer, and a first diffusion barrier layer in the first opening covering the low-k dielectric layer in the first opening, wherein the first diffusion barrier layer has a bottom portion connected to sidewall portions, and wherein the sidewall portions have top surfaces close to a top surface of the low-k dielectric layer. The integrated circuit further includes a conductive line filling the first opening wherein the conductive line has a top surface lower than the top surfaces of the sidewall portions of the diffusion barrier layer, and a metal cap on the conductive line and only within a region directly over the conductive line.
摘要:
A method of forming a semiconductor device comprising: forming a gate dielectric layer over a channel region; forming a gate electrode on the gate dielectric layer; forming source/drain regions substantially aligned with respective edges of the gate electrode with the channel region therebetween; forming a thin metal layer on the source/drain regions; forming a metal alloy layer on the thin metal layer; and transforming the thin metal layer into a low resistance metal silicide.
摘要:
A method of forming a semiconductor device comprising: forming a gate dielectric layer over a channel region; forming a gate electrode on the gate dielectric layer; forming source/drain regions substantially aligned with respective edges of the gate electrode with the channel region therebetween; forming a thin metal layer on the source/drain regions; forming a metal alloy layer on the thin metal layer; and transforming the thin metal layer into a low resistance metal silicide.
摘要:
A conductive polymer between two metallic layers acts a glue layer, a barrier layer or an activation seed layer. The conductive polymer layer is employed to encapsulate a copper interconnection structure to prevent copper diffusion into any overlying layers and improve adhesive characteristics between the copper and any overlying layers.