Abstract:
A surface inspecting apparatus can inspect a smaller defect by using a PSL of a smaller particle size. However, the particle size of the PSL is restricted. In the conventional surface inspecting apparatus, therefore, no consideration has been taken as to how to inspect the defect of such a small particle size as is not set in the PSL which will be needed in the near future in an inspection of a semiconductor manufacturing step. The invention has a light source device for generating light which simulated at least one of a wavelength, a light intensity, a time-dependent change of the light intensity, and a polarization of light which was scattered, diffracted, or reflected by an inspection object, and the light is inputted to a photodetector of the surface inspecting apparatus. The smaller defect can be inspected.
Abstract:
A surface inspection apparatus capable of acquiring scattered light intensity distribution information for each scattering azimuth angle, and detecting foreign matters and defects with high sensitivity. A concave mirror for condensation and another concave mirror for image formation are used to cope with a broad cubic angle. Since mirrors for condensation and image formation are used, a support for clamping the periphery of a lens is unnecessary, and an effective aperture area does not decrease. A plurality of azimuth-wise detection optical systems is disposed and reflected light at all azimuths can be detected by burying the entire periphery without calling for specific lens polishing. A light signal unification unit sums digital data from a particular system corresponding to a scattering azimuth designated in advance in the systems for improving an S/N ratio.
Abstract:
The pattern defect inspection apparatus is operable to detect defects by comparing a detection image, which is obtained through scanning by an image sensor those patterns that have the identical shape and are continuously disposed on the object under tested at equal intervals in row and column directions, with a reference image obtained by scanning neighboring identical shape patterns in the row and column directions. This apparatus has a unit for generating an average reference image by statistical computation processing from the images of identical shape patterns lying next to the detection image including at least eight nearest chips on the up-and-down and right-and-left sides and at diagonal positions with the detection image being intermediately situated. The apparatus also includes a unit that detects a defect by comparing the detection image to the average reference image thus generated.
Abstract:
A surface inspection apparatus capable of acquiring scattered light intensity distribution information for each scattering azimuth angle, and detecting foreign matters and defects with high sensitivity. A concave mirror for condensation and another concave mirror for image formation are used to cope with a broad cubic angle. Since mirrors for condensation and image formation are used, a support for clamping the periphery of a lens is unnecessary, and an effective aperture area does not decrease. A plurality of azimuth-wise detection optical systems is disposed and reflected light at all azimuths can be detected by burying the entire periphery without calling for specific lens polishing. A light signal unification unit sums digital data from a particular system corresponding to a scattering azimuth designated in advance in the systems for improving an S/N ratio.
Abstract:
The pattern defect inspection apparatus is operable to detect defects by comparing a detection image, which is obtained through scanning by an image sensor those patterns that have the identical shape and are continuously disposed on the object under tested at equal intervals in row and column directions, with a reference image obtained by scanning neighboring identical shape patterns in the row and column directions. This apparatus has a unit for generating an average reference image by statistical computation processing from the images of identical shape patterns lying next to the detection image including at least eight nearest chips on the up-and-down and right-and-left sides and at diagonal positions with the detection image being intermediately situated. The apparatus also includes a unit that detects a defect by comparing the detection image to the average reference image thus generated.
Abstract:
An optical inspection apparatus irradiates a light beam onto the outer surface of an object to be inspected, in the form of an illumination spot having an illumination intensity which is higher in the outer peripheral part of the object to be inspected than in the inner peripheral part thereof while uniformly maintains a temperature rise caused by the irradiation of the light beam, over the outer surface of the object to be inspected, in order to prevent the effective entire signal value of a scattered light signal from lowering, without lowering the linear speed of a movable stage for the object to be inspected in the outer peripheral part of the object to be inspected, thereby it is possible to prevent lowering of the detectability for a foreign matter or a defect, for preventing lowering of inspection throughput.
Abstract:
When detecting light scattered by an object to be inspected by using a pulse laser as a light source, noise increases unless a sampling repletion period of an A/D converter is determined so as to be related to a pulse oscillation repetition period of the light source. (1) The sampling repletion period of the A/D converter is set equal to the pulse oscillation repetition period of the light source or an integer times thereof, and the sampling is synchronized with oscillation of the light source. Or (2) the sampling repletion period of the A/D converter is set equal to a half-integer times the pulse oscillation repetition period of the light source. Even if a ripple component resulting from emission pulses of the light source remains in the scattered light signal supplied to the A/D converter remains, therefore, its influence can be eliminated or reduced.
Abstract:
It is an object of the present invention to realize a surface inspection method capable of enlarging a dynamic range of a measurement system while keeping high a calculation accuracy for a particle size of a contaminant particle/defect irrespectively of the particle size even if an intensity of a scattered light resulting from the contaminant particle/defect present on a surface of an object to be inspected is dependent on an illumination direction or the like.A surface of an object to be inspected is illuminated with two illumination beams having an identical wavelength, an identical elevation angle, an identical azimuth, and an identical polarization characteristic but different in intensity by 100:1. Even if an intensity of a scattered light resulting from a contaminant particle/defect present on or near the surface of the object to be inspected has anisotropy dependent on an illumination direction or a detection direction, an intensity ratio of scattered/diffracted/reflected lights generated by illumination beams is always constant to 100:1. It is possible to enlarge a dynamic range of a measurement system while keeping high calculation accuracy for a particle size of the contaminant particle/defect irrespectively of the anisotropy and the particle size of the contaminant particle/defect.
Abstract:
Based on a plurality of defects' position-coordinates and attribute detected by an inspecting apparatus, defects that are easily detectable by an observing apparatus are selected. With these selected defects employed as the indicator, the observing apparatus detects and observes the defects. Moreover, creating a coordinate transformation formula for representing a correlated relationship in the defects' position-coordinates between both the apparatuses, the observing apparatus transforms the defects' position-coordinates so as to observe the defects.
Abstract:
A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.