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公开(公告)号：US08580032B2
公开(公告)日：2013-11-12
申请号：US12515725
申请日：2008-05-07
IPC分类号： C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B30/04 , C30B9/00 , C30B17/00 , C30B21/02 , C30B28/06
摘要： In consideration of influence of segregation, an evaporation area of a volatile dopant and influence of a pulling-up speed at the time of manufacturing a monocrystal by use of a monocrystal pulling-up device, an evaporation speed formula for calculating an evaporation speed of the dopant is derived. At a predetermined timing during pulling-up, gas flow volume and inner pressure in a chamber are controlled such that a cumulative evaporation amount of the dopant, calculated based on the evaporation speed formula, becomes a predetermined amount. A difference between a resistivity profile of the monocrystal predicted based on the evaporation speed formula and an actual resistivity profile is made small. Since no volatile dopant is subsequently added, increase in workload on an operator, increase of manufacturing time, an increase in amorphous adhering to the inside of the chamber, and an increase in workload at the time of cleaning the inside of the chamber can be prevented.
摘要翻译： 考虑到偏析的影响，挥发性掺杂剂的蒸发面积和通过使用单晶提拉装置制造单晶时的提升速度的影响，计算蒸发速度的蒸发速度公式 衍生出掺杂剂。 在提升期间的预定定时，控制室内的气体流量和内部压力，使得基于蒸发速度公式计算的掺杂剂的累积蒸发量变为预定量。 基于蒸发速度公式预测的单晶的电阻率分布与实际电阻率分布之间的差异变小。 由于不随后添加挥发性掺杂剂，因此可以防止操作者的工作量增加，制造时间的增加，非晶态附着在室内的增加，以及清洁室内部时的工作量的增加。 。
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22.发明授权公开(公告)号：US08574363B2
公开(公告)日：2013-11-05
申请号：US12602479
申请日：2008-05-23
IPC分类号： C30B15/04
CPC分类号： C30B15/00 , C30B15/04 , C30B15/203 , C30B29/06
摘要： After adding phosphorus (P) and germanium (Ge) into a silicon melt or adding phosphorus into a silicon/germanium melt, a silicon monocrystal is grown from the silicon melt by a Czochralski method, where a phosphorus concentration [P]L (atoms/cm3) in the silicon melt, a Ge concentration in the silicon monocrystal, an average temperature gradient Gave (K/mm) and a pull speed V (mm/min) are controlled to satisfy a formula (1) as follows, the phosphorus concentration [P] (atoms/cm3) in the silicon monocrystal is 4.84×1019 atoms/cm3 or more and 8.49×1019 atoms/cm3 or less, and the phosphorus concentration [P] (atoms/cm3) and the Ge concentration [Ge] (atoms/cm3) in the silicon monocrystal satisfy a relationship according to a formula (2) as follows while growing the silicon monocrystal. [P]L+(0.3151×[Ge]+3.806×1019)/1.5
摘要翻译： 将磷（P）和锗（Ge）加入到硅熔体中或在硅/锗熔体中加入磷后，通过切克劳斯基法从硅熔体生长硅单晶，其中磷浓度[P] L（原子/ cm3），硅单晶中的Ge浓度，平均温度梯度Gave（K / mm）和拉速V（mm / min）被控制为满足式（1）如下，磷浓度 硅单晶中的[P]（原子/ cm3）为4.84×1019原子/ cm3以上且8.49×1019原子/ cm3以下，磷浓度[P]（原子/ cm3）和Ge浓度[Ge] 硅单晶中的（原子/ cm 3）在生长硅单晶时满足如下式（2）的关系。 [P] L +（0.3151×[Ge] + 3.806×1019）/1.5 <0.5×（Gave / V + 43）×1019（1）[Ge] < - 6.95×[P] + 5.90×1020（2）。
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公开(公告)号：US08535439B2
公开(公告)日：2013-09-17
申请号：US12684284
申请日：2010-01-08
IPC分类号： C30B15/02
摘要： To provide a manufacturing method for a silicon single crystal that can reduce introduction of dislocation thereinto even if a required amount of dopant is added to a melt while growing a straight body portion of a silicon ingot. In a manufacturing method for a silicon single crystal according to the present invention that includes a dopant addition step of adding a dopant to a melt while a straight body portion of a silicon single crystal is growing in a growth step of growing the silicon single crystal by dipping a seed crystal into a silicon melt and then pulling the seed crystal therefrom, in the dopant addition step, a remaining mass of the melt is calculated at the beginning thereof, and the dopant is added to the melt at a rate of 0.01 to 0.035 g/min·kg per minute per 1 kg of the calculated remaining mass of the melt.
摘要翻译： 即使在生长硅锭的直体部分的同时在熔体中添加所需量的掺杂剂，也可以提供能够减少位错引入的硅单晶的制造方法。 在根据本发明的硅单晶的制造方法中，包括掺杂剂添加步骤，当在单晶生长的生长步骤中生长硅单晶的生长步骤期间，在硅单晶的直体部分生长步骤期间，向熔体中添加掺杂剂， 将晶种浸入硅熔体中，然后从其中拉出晶种，在掺杂剂添加步骤中，在开始时计算熔体的剩余质量，掺杂剂以0.01至0.035的速率加入到熔体中 g / min·kg / min / 1kg计算的熔体剩余质量。
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公开(公告)号：US08043428B2
公开(公告)日：2011-10-25
申请号：US12524303
申请日：2008-05-23
IPC分类号： C30B15/04
CPC分类号： C30B29/06 , C30B15/04 , C30B15/203
摘要： In growing a silicon monocrystal from a silicon melt added with an N-type dopant by Czochralski method, the monocrystal is grown such that a relationship represented by a formula (1) as follows is satisfied. In the formula (1): a dopant concentration in the silicon melt is represented by C (atoms/cm3); an average temperature gradient of the grown monocrystal is represented by Gave(K/mm); a pulling-up speed is represented by V (mm/min); and a coefficient corresponding to a kind of the dopant is represented by A. By growing the silicon monocrystal under a condition shown in the left to a critical line G1, occurrence of abnormal growth due to compositional supercooling can be prevented. Gave V > A · C - 43 ( 1 )
摘要翻译： 在通过Czochralski法从添加有N型掺杂剂的硅熔体生长硅单晶的过程中，使单晶生长使得满足如下的式（1）所示的关系。 在式（1）中：硅熔体中的掺杂剂浓度由C（原子/ cm3）表示; 生长的单晶的平均温度梯度由Gave（K / mm）表示; 拉伸速度由V（mm / min）表示; 并且与掺杂剂的种类相对应的系数由A表示。通过在左侧所示的条件下将硅单晶生长至临界线G1，可以防止由组成过冷而引起的异常生长的发生。 Gave V> A·C - 43（1）
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公开(公告)号：US20100031871A1
公开(公告)日：2010-02-11
申请号：US12524331
申请日：2008-05-23
IPC分类号： C30B15/04
摘要： A doping device includes a first dopant accommodating portion including an opening on an upper portion to accommodate a first dopant that is evaporated near a surface of a semiconductor melt; a second dopant accommodating portion including a dopant holder that holds a second dopant that is liquefied near the surface of the semiconductor melt while including a communicating hole for delivering the liquefied dopant downwardly, and a conduit tube provided on a lower portion of the dopant holder for delivering the liquefied dopant flowed from the communicating hole to the surface of the semiconductor melt; and a guide provided by a cylinder body of which a lower end is opened and an upper end is closed for guiding dopant gas generated by evaporation of the first dopant to the surface of the semiconductor melt.
摘要翻译： 掺杂装置包括第一掺杂剂容纳部分，其包括在上部的开口，以容纳在半导体熔体的表面附近蒸发的第一掺杂剂; 第二掺杂剂容纳部分，其包括掺杂剂保持器，所述掺杂剂保持器保持在半导体熔体的表面附近液化的第二掺杂剂，同时包括用于向下输送液化掺杂剂的连通孔，以及设置在掺杂剂保持器的下部的导管， 将从所述连通孔流出的液化掺杂剂输送到所述半导体熔体的表面; 以及由其下端打开并且上端封闭的筒体提供的引导件，用于将由第一掺杂剂的蒸发产生的掺杂剂气体引导到半导体熔体的表面。
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26.发明申请PROCESS FOR PRODUCTION OF SILICON SINGLE CRYSTAL, AND HIGHLY DOPED N-TYPE SEMICONDUCTOR SUBSTRATE 有权用于生产硅单晶和高精度N型半导体基板的方法公开(公告)号：US20110049438A1
公开(公告)日：2011-03-03
申请号：US12602479
申请日：2008-05-23
CPC分类号： C30B15/00 , C30B15/04 , C30B15/203 , C30B29/06
摘要： After adding phosphorus (P) and germanium (Ge) into a silicon melt or adding phosphorus into a silicon/germanium melt, a silicon monocrystal is grown from the silicon melt by a Czochralski method, where a phosphorus concentration [P]L (atoms/cm3) in the silicon melt, a Ge concentration in the silicon monocrystal, an average temperature gradient Gave (K/mm) and a pull speed V (mm/min) are controlled to satisfy a formula (1) as follows, the phosphorus concentration [P] (atoms/cm3) in the silicon monocrystal is 4.84×1019 atoms/cm3 or more and 8.49×1019 atoms/cm3 or less, and the phosphorus concentration [P] (atoms/cm3) and the Ge concentration [Ge] (atoms/cm3) in the silicon monocrystal satisfy a relationship according to a formula (2) as follows while growing the silicon monocrystal. [P]L+(0.3151×[Ge]+3.806×1018)/1.5
摘要翻译： 将磷（P）和锗（Ge）加入到硅熔体中或在硅/锗熔体中加入磷后，通过切克劳斯基法从硅熔体生长硅单晶，其中磷浓度[P] L（原子/ cm3），硅单晶中的Ge浓度，平均温度梯度Gave（K / mm）和拉速V（mm / min）被控制为满足式（1）如下，磷浓度 硅单晶中的[P]（原子/ cm3）为4.84×1019原子/ cm3以上且8.49×1019原子/ cm3以下，磷浓度[P]（原子/ cm3）和Ge浓度[Ge] 硅单晶中的（原子/ cm 3）在生长硅单晶时满足如下式（2）的关系。 [P] L +（0.3151×[Ge] + 3.806×1018）/1.5 <0.5×（Gave / V + 43）×1019（1）[Ge] < - 6.95×[P] + 5.90×1020（2）。
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公开(公告)号：US08840721B2
公开(公告)日：2014-09-23
申请号：US12944141
申请日：2010-11-11
CPC分类号： C30B15/04 , C30B15/20 , C30B29/06 , Y10T117/1052
摘要： The present invention provides a method of producing low-resistivity silicon single crystal containing a dopant at a relatively high concentration by adding a large amount of the dopant to silicon melt when the silicon single crystal is pulled up, with suppressing occurrence of dislocation in the crystal. Specifically, the present invention provides a method of manufacturing silicon single crystal by bringing silicon seed crystal into contact with silicon melt and pulling up the silicon seed crystal while rotating the crystal to grow silicon single crystal whose straight body section has a diameter of φ mm below the silicon seed crystal, the method comprising: the dopant-adding step of adding a dopant to the silicon melt during growth of the straight body section of the silicon single crystal, while rotating the silicon single crystal at a rotational speed of ω rpm (where ω≧24−(φ/25)).
摘要翻译： 本发明提供了一种通过在硅单晶被拉起时向硅熔体中添加大量掺杂剂而在较高浓度下生产含有掺杂剂的低电阻率硅单晶的方法，同时抑制晶体中位错的发生 。 具体地，本发明提供一种通过使硅晶种与硅熔体接触并提取硅晶种同时旋转晶体来生长直体部分具有直径为＆phgr的硅单晶的方法， 该方法包括：掺杂剂添加步骤，在硅单晶的直体部分的生长过程中向硅熔体中添加掺杂剂，同时以ωrpm的转速旋转硅单晶 （其中ω≥24-（＆phgr / 25））。
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公开(公告)号：US08888911B2
公开(公告)日：2014-11-18
申请号：US12875607
申请日：2010-09-03
CPC分类号： C30B29/06 , C30B15/00 , C30B15/04 , C30B15/20 , C30B15/22 , C30B15/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： The present invention provides a technique which enables production of single crystal silicon having relatively low resistivity by preventing cell growth during crystal growth from occurring, especially in a case where a relatively large amount of dopant is added to a molten silicon raw material. Specifically, the present invention provides a method of producing single crystal silicon by the Czochralski process, comprising producing single crystal silicon having relatively low resistivity by controlling a height of a solid-liquid interface when the single crystal silicon is pulled up.
摘要翻译： 本发明提供一种能够通过在晶体生长期间防止细胞生长而生产具有较低电阻率的单晶硅的技术，特别是在向熔融硅原料中添加相对大量的掺杂剂的情况下。 具体地说，本发明提供了一种通过切克劳斯基法生产单晶硅的方法，包括当单晶硅被拉起时通过控制固 - 液界面的高度来制造具有较低电阻率的单晶硅。
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公开(公告)号：US20110056428A1
公开(公告)日：2011-03-10
申请号：US12875607
申请日：2010-09-03
CPC分类号： C30B29/06 , C30B15/00 , C30B15/04 , C30B15/20 , C30B15/22 , C30B15/30 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： The present invention provides a technique which enables production of single crystal silicon having relatively low resistivity by preventing cell growth during crystal growth from occurring, especially in a case where a relatively large amount of dopant is added to a molten silicon raw material. Specifically, the present invention provides a method of producing single crystal silicon by the Czochralski process, comprising producing single crystal silicon having relatively low resistivity by controlling a height of a solid-liquid interface when the single crystal silicon is pulled up.
摘要翻译： 本发明提供一种能够通过防止晶体生长期间的细胞生长而产生具有相对低电阻率的单晶硅的技术，特别是在向熔融硅原料中添加相对大量的掺杂剂的情况下。 具体地说，本发明提供了一种通过切克劳斯基法生产单晶硅的方法，包括当单晶硅被拉起时通过控制固 - 液界面的高度来制造具有较低电阻率的单晶硅。
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30.发明申请METHOD OF DOPANT INJECTION, N-TYPE SILICON SINGLE-CRYSTAL, DOPING APPARATUS AND PULL-UP DEVICE 有权注射方法，N型硅单晶，喷涂装置和上拉装置公开(公告)号：US20090314996A1
公开(公告)日：2009-12-24
申请号：US12374477
申请日：2007-07-20
摘要： In a dopant-injecting method for injecting a volatile dopant into a semiconductor melt, a doping device having an accommodating portion for accommodating a solid dopant and a cylindrical portion into which a gas ejected from the accommodating portion is introduced, a lower end surface of the cylindrical portion being opened to guide the gas to the melt, is used. The sublimation rate of the dopant in the accommodating portion is set in a range from 10 g/min to 50 g/min. Since a flow volume of the volatilized dopant gas is controlled by setting the sublimation rate of the dopant gas in the accommodating portion in the range from 10 g/min to 50 g/min, the melt is not blown off when the gas is blown onto the melt.
摘要翻译： 在用于将挥发性掺杂剂注入到半导体熔体中的掺杂剂注入方法中，具有用于容纳固体掺杂剂的容纳部分的掺杂装置和从所述容纳部分喷出的气体引入到其中的圆柱形部分， 使用圆筒形部分打开以将气体引导到熔体。 容纳部中的掺杂剂的升华速度设定在10g / min〜50g / min的范围内。 由于通过将容纳部中的掺杂剂气体的升华速度设定在10g / min〜50g / min的范围内来控制挥发的掺杂气体的流动体积，所以当将气体吹入时熔融物不会被吹走 熔化。
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