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    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM
    21.
    发明申请
    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
    CPP类型和磁盘系统的磁阻效应器件

    公开(公告)号：US20090135529A1

    公开(公告)日：2009-05-28

    申请号：US11946358

    申请日：2007-11-28

    申请人： Koji Shimazawa ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Takahiko Machita ,  Shinji Hara

    发明人： Koji Shimazawa ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Takahiko Machita ,  Shinji Hara

    IPC分类号： G11B5/33

    CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  H01F10/30

    摘要： The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, comprising a magneto-resistive effect unit, and a first shield layer and a second shield layer located and formed such that the magneto-resistive effect unit is sandwiched between them, with a sense current applied in a stacking direction. The magneto-resistive effect unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is interposed between them. The first shield layer, and the second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and the first ferromagnetic layer, and the second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of the first shield layer and the second shield layer. It is thus possible to achieve an antiparallel magnetization state for two ferromagnetic layers (free layers) with simple structure yet without being restricted by the material and specific structure of an intermediate film interposed between the two ferromagnetic layers (free layers). Further, it is possible to make improvements in linear recording densities by the adoption of a structure capable of making the “read gap length” (the gap between the upper and lower shield layers) short (narrow) thereby meeting recent demands for ultra-high recording densities. Furthermore, it is possible to obtain stable magneto-resistive effect changes so that much higher reliability is achievable.

    摘要翻译： 本发明提供了CPP（电流垂直于平面）结构的磁阻效应器件，包括磁阻效应单元，以及第一屏蔽层和第二屏蔽层，其位于和形成为使得磁阻效应单元 夹在它们之间，具有沿层叠方向施加的感测电流。 磁阻效应单元包括非磁性中间层，并且堆叠并形成第一铁磁层和第二铁磁层，使得非磁性中间层介于它们之间。 第一屏蔽层和第二屏蔽层由磁化方向控制装置在磁化方向上控制，并且第一铁磁层和第二铁磁层接收到产生反平行磁化状态的动作，其中相互磁化 在第一屏蔽层和第二屏蔽层的磁作用的影响下处于相反方向。 因此，对于具有简单结构的两个铁磁层（自由层）可以实现反平行磁化状态，而不受介于两个铁磁层（自由层）之间的中间膜的材料和特定结构的限制。 此外，通过采用能够使“读取间隙长度”（上下屏蔽层之间的间隙）短（窄）的结构，可以改善线性记录密度，从而满足最近对超高的要求 记录密度 此外，可以获得稳定的磁阻效应变化，从而可实现更高的可靠性。

    Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers
    22.
    发明授权
    Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers 有权
    磁阻元件包括耦合到一对屏蔽层的一对铁磁层

    公开(公告)号：US08023230B2

    公开(公告)日：2011-09-20

    申请号：US12289401

    申请日：2008-10-27

    申请人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

    发明人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

    摘要： A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.

    摘要翻译： 磁阻元件包括一对屏蔽部分，以及设置在该对屏蔽部分之间的MR堆叠和偏置磁场施加层。 屏蔽部分别包括单个磁畴部分。 MR堆叠包括磁耦合到该对单个磁畴部分的一对铁磁层，以及设置在该对铁磁层之间的间隔层。 MR堆叠具有前端面，后端面和两个侧面。 磁阻元件还包括设置在一对单磁畴部分之间并且分别邻近MR堆叠的两个侧表面的两个磁通引导层。 两个磁通导向层中的每一个具有前端面和后端面。 偏置磁场施加层具有面向MR堆叠的后端面的前端面和两个导流层的各个后端面。

    Magneto-resistance effect element having diffusion blocking layer and thin-film magnetic head
    24.
    发明授权
    Magneto-resistance effect element having diffusion blocking layer and thin-film magnetic head 有权
    具有扩散阻挡层和薄膜磁头的磁阻效应元件

    公开(公告)号：US07764471B2

    公开(公告)日：2010-07-27

    申请号：US11685021

    申请日：2007-03-12

    申请人： Tomohito Mizuno ,  Takahiko Machita ,  Kei Hirata ,  Yoshihiro Tsuchiya ,  Shinji Hara

    发明人： Tomohito Mizuno ,  Takahiko Machita ,  Kei Hirata ,  Yoshihiro Tsuchiya ,  Shinji Hara

    IPC分类号： G11B5/33

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1121

    摘要： A magnetoresistance effect element (MR element) for use in a thin-film magnetic head has a buffer layer, an antiferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer that are successively stacked. A sense current flows in a direction perpendicular to layer surfaces via a lower shield layer and an upper shield layer. The pinned layer comprises an outer layer having a fixed magnetization direction, a nonmagnetic intermediate layer, and an inner layer in the form of a ferromagnetic layer. The spacer layer comprises a first nonmagnetic metal layer, a semiconductor layer made of ZnO, and a second nonmagnetic metal layer. The inner layer or the outer layer includes a diffusion blocking layer made of an oxide of an element whose electronegativity is equal to or smaller than Zn, e.g., ZnO, TaO, ZrO, MgO, TiO, or HfO, or made of RuO.

    摘要翻译： 用于薄膜磁头的磁阻效应元件（MR元件）具有依次层叠的缓冲层，反铁磁层，钉扎层，间隔层，自由层和盖层。 感测电流通过下屏蔽层和上屏蔽层在垂直于层表面的方向上流动。 被钉扎层包括具有固定磁化方向的外层，非磁性中间层和呈铁磁层形式的内层。 间隔层包括第一非磁性金属层，由ZnO制成的半导体层和第二非磁性金属层。 内层或外层包括由电负性等于或小于Zn的元素的氧化物（例如ZnO，TaO，ZrO，MgO，TiO或HfO）或由RuO制成的扩散阻挡层。

    Method for manufacturing CPP-type magnetoresistance effect element
    25.
    发明授权
    Method for manufacturing CPP-type magnetoresistance effect element 有权
    CPP型磁阻效应元件的制造方法

    公开(公告)号：US07947188B2

    公开(公告)日：2011-05-24

    申请号：US12318481

    申请日：2008-12-30

    申请人： Toshiyuki Ayukawa ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita ,  Yoshihiro Tsuchiya

    发明人： Toshiyuki Ayukawa ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita ,  Yoshihiro Tsuchiya

    IPC分类号： B44C1/22

    CPC分类号： G11B5/3163 ,  G11B5/3929

    摘要： A method for manufacturing a thin film magnetic head includes a step for forming an MR layered body; a step for forming a first sacrificial layer made of material removable by wet etching, and subsequently, forming a cap layer on the upper surface of the first sacrificial layer; further, a step for patterning the MR layered body and the cap layer and then filling part of the removed areas of the MR layered body and the cap layer with a bias magnetic layer and the remaining with insulating layers; a step for removing the cap layer by dry etching and, subsequently, removing the first sacrificial layer by wet etching; and a step for forming a second shield layer above the MR layered body and the bias magnetic layer.

    摘要翻译： 制造薄膜磁头的方法包括形成MR层叠体的步骤; 用于形成由通过湿蚀刻除去的材料制成的第一牺牲层的步骤，随后在所述第一牺牲层的上表面上形成盖层; 另外，用于对MR层叠体和盖层进行图案化，然后用偏磁层填充MR层状体和盖层的去除区域的一部分，剩余的具有绝缘层的步骤; 通过干蚀刻去除盖层的步骤，随后通过湿法蚀刻去除第一牺牲层; 以及在MR层叠体和偏磁层上形成第二屏蔽层的工序。

    Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layer including amorphous layer
    26.
    发明申请
    Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layer including amorphous layer 审中-公开

    公开(公告)号：US20100149689A1

    公开(公告)日：2010-06-17

    申请号：US12314464

    申请日：2008-12-11

    申请人： Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Shinji Hara ,  Takahiko Machita ,  Hironobu Matsuzawa

    发明人： Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Shinji Hara ,  Takahiko Machita ,  Hironobu Matsuzawa

    IPC分类号： G11B5/60 ,  G11B5/33

    CPC分类号： G11B5/3912 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3295

    摘要： A thin film magnetic head includes a magnetoresistance (MR) layered body that has first and second magnetic layers whose magnetization direction are changed according to an external magnetic field, a nonmagnetic middle layer and where the first magnetic layer, the nonmagnetic middle layer and the second magnetic layer are disposed in a manner of facing each other in respective order, first and second shield layers that are disposed in a manner of sandwiching the MR-stack in the film surface orthogonal direction of the MR-stack facing the first magnetic layer and the second magnetic layer, respectively, and that also serve as an electrode for applying a sense current to the film surface orthogonal direction of the MR-stack; and a bias magnetic field application means that is disposed on an opposite surface of an air bearing surface (ABS) of the MR-stack, and that applies a bias magnetic field to the MR-stack in the direction orthogonal to the ABS. The first shield layer has a first exchange coupling magnetic field (ECMF) application layer that is disposed in a manner of facing the first magnetic layer, and that transmits to the first magnetic layer an exchange coupling magnetic field in the direction in parallel with the ABS, and that includes an amorphous layer, and has a first antiferromagnetic layer that is disposed on a rear surface of the first ECMF application layer viewed from the first magnetic layer in a manner of facing the first ECMF application layer, and that is exchange-coupled with the first ECMF application layer. The second shield layer has a second exchange coupling magnetic field (ECMF) application layer that is disposed in a manner of facing the second magnetic layer, and that transmits to the second magnetic layer the exchange coupling magnetic field in a direction in parallel with the ABS; and a second antiferromagnetic layer that is disposed on a rear surface of the second ECMF application layer viewed from the second magnetic layer, and that is exchange-coupled with the second ECMF application layer.

    Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers
    27.
    发明申请
    Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers 失效
    薄膜磁头具有一对磁性层，其磁化由屏蔽层控制

    公开(公告)号：US20100027168A1

    公开(公告)日：2010-02-04

    申请号：US12219841

    申请日：2008-07-29

    申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    IPC分类号： G11B5/33

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3912 ,  H01L43/08

    摘要： A thin film magnetic head comprise an MR laminated body composed of a first and second MR magnetic layers, first and second shield layers, and a bias magnetic field application layer provided on an opposite side of an air bearing surface (ABS) of the MR laminated body in order to apply a bias magnetic field orthogonal relative to the ABS. The first shield layer comprises a first exchange coupling magnetic field application layer, a first antimagnetic layer, a second exchange coupling magnetic field application layer, and a second antimagnetic layer. The first antimagnetic layer is provided in contact with the first exchange coupling magnetic field application layer on the rear face of the first exchange coupling magnetic field application layer and which is antimagnetically coupled with the first exchange coupling magnetic field application layer. The second shield layer has the same configuration as that of the first shield layer.

    摘要翻译： 薄膜磁头包括由第一和第二MR磁性层，第一和第二屏蔽层以及设置在MR叠层的空气轴承表面（ABS）的相对侧上的偏置磁场施加层组成的MR层叠体 以便施加相对于ABS正交的偏置磁场。 第一屏蔽层包括第一交换耦合磁场施加层，第一防磁层，第二交换耦合磁场施加层和第二防磁层。 第一防磁层设置成与第一交换耦合磁场施加层的背面上的第一交换耦合磁场施加层接触，并且与第一交换耦合磁场施加层反磁耦合。 第二屏蔽层具有与第一屏蔽层相同的构造。