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    Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layer including amorphous layer
    1.
    发明申请
    Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layer including amorphous layer 审中-公开

    公开(公告)号：US20100149689A1

    公开(公告)日：2010-06-17

    申请号：US12314464

    申请日：2008-12-11

    申请人： Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Shinji Hara ,  Takahiko Machita ,  Hironobu Matsuzawa

    发明人： Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Shinji Hara ,  Takahiko Machita ,  Hironobu Matsuzawa

    IPC分类号： G11B5/60 ,  G11B5/33

    CPC分类号： G11B5/3912 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3295

    摘要： A thin film magnetic head includes a magnetoresistance (MR) layered body that has first and second magnetic layers whose magnetization direction are changed according to an external magnetic field, a nonmagnetic middle layer and where the first magnetic layer, the nonmagnetic middle layer and the second magnetic layer are disposed in a manner of facing each other in respective order, first and second shield layers that are disposed in a manner of sandwiching the MR-stack in the film surface orthogonal direction of the MR-stack facing the first magnetic layer and the second magnetic layer, respectively, and that also serve as an electrode for applying a sense current to the film surface orthogonal direction of the MR-stack; and a bias magnetic field application means that is disposed on an opposite surface of an air bearing surface (ABS) of the MR-stack, and that applies a bias magnetic field to the MR-stack in the direction orthogonal to the ABS. The first shield layer has a first exchange coupling magnetic field (ECMF) application layer that is disposed in a manner of facing the first magnetic layer, and that transmits to the first magnetic layer an exchange coupling magnetic field in the direction in parallel with the ABS, and that includes an amorphous layer, and has a first antiferromagnetic layer that is disposed on a rear surface of the first ECMF application layer viewed from the first magnetic layer in a manner of facing the first ECMF application layer, and that is exchange-coupled with the first ECMF application layer. The second shield layer has a second exchange coupling magnetic field (ECMF) application layer that is disposed in a manner of facing the second magnetic layer, and that transmits to the second magnetic layer the exchange coupling magnetic field in a direction in parallel with the ABS; and a second antiferromagnetic layer that is disposed on a rear surface of the second ECMF application layer viewed from the second magnetic layer, and that is exchange-coupled with the second ECMF application layer.

    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM
    2.
    发明申请
    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
    CPP类型和磁盘系统的磁阻效应器件

    公开(公告)号：US20090190270A1

    公开(公告)日：2009-07-30

    申请号：US12022538

    申请日：2008-01-30

    申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

    发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

    IPC分类号： G11B5/33

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967

    摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.

    摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流 其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域 所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化 沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。 因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（ 上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

    Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers
    5.
    发明申请
    Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers 有权
    磁阻元件包括耦合到一对屏蔽层的一对铁磁层

    公开(公告)号：US20100103562A1

    公开(公告)日：2010-04-29

    申请号：US12289401

    申请日：2008-10-27

    申请人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

    发明人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

    摘要： A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.

    摘要翻译： 磁阻元件包括一对屏蔽部分，以及设置在该对屏蔽部分之间的MR堆叠和偏置磁场施加层。 屏蔽部分别包括单个磁畴部分。 MR堆叠包括磁耦合到该对单个磁畴部分的一对铁磁层，以及设置在该对铁磁层之间的间隔层。 MR堆叠具有前端面，后端面和两个侧面。 磁阻元件还包括设置在一对单磁畴部分之间并且分别邻近MR堆叠的两个侧表面的两个磁通引导层。 两个磁通导向层中的每一个具有前端面和后端面。 偏置磁场施加层具有面向MR堆叠的后端面的前端面和两个导流层的各个后端面。

    Magnetoresistive element including a pair of free layers coupled to a pair of shield layers
    6.
    发明申请
    Magnetoresistive element including a pair of free layers coupled to a pair of shield layers 有权
    磁阻元件包括耦合到一对屏蔽层的一对自由层

    公开(公告)号：US20100079917A1

    公开(公告)日：2010-04-01

    申请号：US12285069

    申请日：2008-09-29

    申请人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

    发明人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

    IPC分类号： G11B5/33

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

    摘要： A first shield portion located below an MR stack includes a first main shield layer, a first antiferromagnetic layer, and a first magnetization controlling layer including a first ferromagnetic layer exchange-coupled to the first antiferromagnetic layer. A second shield portion located on the MR stack includes a second main shield layer, a second antiferromagnetic layer, and a second magnetization controlling layer including a second ferromagnetic layer exchange-coupled to the second antiferromagnetic layer. The MR stack includes two free layers magnetically coupled to the two magnetization controlling layers. Only one of the two magnetization controlling layers includes a third ferromagnetic layer that is antiferromagnetically exchange-coupled to the first or second ferromagnetic layer through a nonmagnetic middle layer. The first shield portion includes an underlayer disposed on the first main shield layer, and the first antiferromagnetic layer is disposed on the underlayer.

    摘要翻译： 位于MR堆叠下方的第一屏蔽部分包括第一主屏蔽层，第一反铁磁层和包括与第一反铁磁层交换耦合的第一铁磁层的第一磁化控制层。 位于MR堆叠上的第二屏蔽部分包括第二主屏蔽层，第二反铁磁层和包括交换耦合到第二反铁磁层的第二铁磁层的第二磁化控制层。 MR堆叠包括磁耦合到两个磁化控制层的两个自由层。 两个磁化控制层中的仅一个包括通过非磁性中间层反铁磁交换耦合到第一或第二铁磁层的第三铁磁层。 第一屏蔽部分包括设置在第一主屏蔽层上的底层，并且第一反铁磁层设置在底层上。

    Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers
    7.
    发明申请
    Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers 审中-公开
    磁阻元件包括耦合到一对屏蔽层的一对铁磁层

    公开(公告)号：US20100053820A1

    公开(公告)日：2010-03-04

    申请号：US12230604

    申请日：2008-09-02

    申请人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

    发明人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3286

    摘要： A magnetoresistive element includes first and second shield layers, an MR stack disposed therebetween, a first hard magnetic layer for setting the magnetization direction of the first shield layer, and a second hard magnetic layer for setting the magnetization direction of the second shield layer. The MR stack includes a first ferromagnetic layer magnetically coupled to the first shield layer, a second ferromagnetic layer magnetically coupled to the second shield layer, and a spacer layer between the first and second ferromagnetic layers. The first and second ferromagnetic layers have magnetizations that are in antiparallel directions when any external magnetic field other than a magnetic field resulting from the first and second hard magnetic layers is not applied to the two ferromagnetic layers, and that change their directions in response to an external magnetic field other than the magnetic field resulting from the first and second hard magnetic layers.

    摘要翻译： 磁阻元件包括第一和第二屏蔽层，设置在其间的MR堆叠，用于设定第一屏蔽层的磁化方向的第一硬磁性层和用于设定第二屏蔽层的磁化方向的第二硬磁性层。 MR堆叠包括磁耦合到第一屏蔽层的第一铁磁层，与第二屏蔽层磁耦合的第二铁磁层，以及在第一和第二铁磁层之间的间隔层。 当由第一和第二硬磁性层产生的磁场以外的任何外部磁场不施加到两个铁磁层时，第一和第二铁磁层具有处于反平行方向的磁化，并且响应于 除了由第一和第二硬磁性层产生的磁场以外的外部磁场。

    Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers
    10.
    发明申请
    Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers 失效
    薄膜磁头具有一对磁性层，其磁化由屏蔽层控制

    公开(公告)号：US20100027168A1

    公开(公告)日：2010-02-04

    申请号：US12219841

    申请日：2008-07-29

    申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    IPC分类号： G11B5/33

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3912 ,  H01L43/08

    摘要： A thin film magnetic head comprise an MR laminated body composed of a first and second MR magnetic layers, first and second shield layers, and a bias magnetic field application layer provided on an opposite side of an air bearing surface (ABS) of the MR laminated body in order to apply a bias magnetic field orthogonal relative to the ABS. The first shield layer comprises a first exchange coupling magnetic field application layer, a first antimagnetic layer, a second exchange coupling magnetic field application layer, and a second antimagnetic layer. The first antimagnetic layer is provided in contact with the first exchange coupling magnetic field application layer on the rear face of the first exchange coupling magnetic field application layer and which is antimagnetically coupled with the first exchange coupling magnetic field application layer. The second shield layer has the same configuration as that of the first shield layer.

    摘要翻译： 薄膜磁头包括由第一和第二MR磁性层，第一和第二屏蔽层以及设置在MR叠层的空气轴承表面（ABS）的相对侧上的偏置磁场施加层组成的MR层叠体 以便施加相对于ABS正交的偏置磁场。 第一屏蔽层包括第一交换耦合磁场施加层，第一防磁层，第二交换耦合磁场施加层和第二防磁层。 第一防磁层设置成与第一交换耦合磁场施加层的背面上的第一交换耦合磁场施加层接触，并且与第一交换耦合磁场施加层反磁耦合。 第二屏蔽层具有与第一屏蔽层相同的构造。