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公开(公告)号:US06656838B2
公开(公告)日:2003-12-02
申请号:US10150950
申请日:2002-05-21
IPC分类号: H01L2144
CPC分类号: C23C16/45565 , C23C16/45521 , C23C16/45557 , C23C16/45572 , C23C16/4581 , C23C16/46 , C30B25/02 , C30B29/06 , H01L21/28556 , H01L21/76877
摘要: To provide a process for producing a semiconductor, which can form a CVD film at a high film-forming rate with a good step coverage, good uniformities of film forming rate and sheet resistance in the in-plane region of a wafer and a good reproducibility at every wafers, and an apparatus for treating a semiconductor for the process. In a treating chamber kept under pressure of 1,000-50,000 Pa, a wafer is placed on a susceptor, and a film is deposited on the wafer by heating the wafer at 500° C. or higher by a plate-shaped heater through the susceptor, while supplying a feed gas into the treating chamber at 500-50,000 sccm through gas injection nozzles provided near the center of a shower plate provided approximately in parallel with the wafer at a distance of 1-20 mm from the wafer and kept at a temperature of 200° C. or lower.
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公开(公告)号:US06524927B1
公开(公告)日:2003-02-25
申请号:US09390683
申请日:1999-09-07
申请人: Yasuhiro Sugawara , Ryouichi Furukawa , Toshio Uemura , Akira Takamatsu , Hirohiko Yamamoto , Tadanori Yoshida , Masayuki Ishizaka , Shinpei Iljima , Yuzuru Ohji
发明人: Yasuhiro Sugawara , Ryouichi Furukawa , Toshio Uemura , Akira Takamatsu , Hirohiko Yamamoto , Tadanori Yoshida , Masayuki Ishizaka , Shinpei Iljima , Yuzuru Ohji
IPC分类号: H01L2120
CPC分类号: H01L28/84 , H01L27/10814 , H01L27/10894 , H01L28/90
摘要: A first silicon film is so formed as to extend along the inner surface of trenches 52 formed in a silicon oxide film 50, an oxide film is formed on the surface of the first silicon film, and a second amorphous silicon film is further deposited. Heat-treatment is applied to the surface of the second amorphous silicon film for seeding silicon nuclei and for promoting grain growth, and a granular silicon crystal 57 is grown from the second amorphous silicon film. In this way, the resistance of a lower electrode 59 of a capacitance device can be lowered.
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