公开(公告)号：US06403479B1

公开(公告)日：2002-06-11

申请号：US09787242

申请日：2001-03-16

申请人： Tomoji Watanabe ,  Akiko Kagatsume ,  Tadanori Yoshida

发明人： Tomoji Watanabe ,  Akiko Kagatsume ,  Tadanori Yoshida

IPC分类号： H01L2144

CPC分类号： C23C16/45565 ,  C23C16/45521 ,  C23C16/45572 ,  C23C16/4581 ,  C23C16/4583 ,  C23C16/46 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： To provide a process for producing a semiconductor, which can form a CVD film at a high film-forming rate with a good step coverage, good uniformities of film forming rate and sheet resistance in the in-plane region of a wafer and a good reproducibility at every wafers, and an apparatus for treating a semiconductor for the process. In a treating chamber kept under pressure of 1,000-50,000 Pa, a wafer is placed on a susceptor, and a film is deposited on the wafer by heating the wafer at 500° C. or higher by a plate-shaped heater through the susceptor, while supplying a feed gas into the treating chamber at 500-50,000 sccm through gas injection nozzles provided near the center of a shower plate provided approximately in parallel with the wafer at a distance of 1-20 mm from the wafer and kept at a temperature of 200° C. or lower.

摘要翻译： 为了提供一种制造半导体的方法，其能够以高的成膜速度以良好的阶梯覆盖率形成CVD膜，在晶片的面内区域具有良好的成膜速度和薄层电阻的均匀性以及良好的再现性 在每个晶片处，以及用于处理该半导体的装置。 在保持在1000-50,000Pa的压力下的处理室中，将晶片放置在基座上，通过板式加热器通过基座加热500℃或更高的晶片，将膜沉积在晶片上， 同时通过设置在与晶片大致平行于淋洗板的中心附近的气体注射喷嘴以500-50,000sccm供给进料气体，距离晶片为距离晶片1-20mm的距离，并保持在 200℃以下。

公开(公告)号：US06656838B2

公开(公告)日：2003-12-02

申请号：US10150950

申请日：2002-05-21

申请人： Tomoji Watanabe ,  Akiko Kagatsume ,  Tadanori Yoshida

发明人： Tomoji Watanabe ,  Akiko Kagatsume ,  Tadanori Yoshida

IPC分类号： H01L2144

CPC分类号： C23C16/45565 ,  C23C16/45521 ,  C23C16/45557 ,  C23C16/45572 ,  C23C16/4581 ,  C23C16/46 ,  C30B25/02 ,  C30B29/06 ,  H01L21/28556 ,  H01L21/76877

摘要： To provide a process for producing a semiconductor, which can form a CVD film at a high film-forming rate with a good step coverage, good uniformities of film forming rate and sheet resistance in the in-plane region of a wafer and a good reproducibility at every wafers, and an apparatus for treating a semiconductor for the process. In a treating chamber kept under pressure of 1,000-50,000 Pa, a wafer is placed on a susceptor, and a film is deposited on the wafer by heating the wafer at 500° C. or higher by a plate-shaped heater through the susceptor, while supplying a feed gas into the treating chamber at 500-50,000 sccm through gas injection nozzles provided near the center of a shower plate provided approximately in parallel with the wafer at a distance of 1-20 mm from the wafer and kept at a temperature of 200° C. or lower.

公开(公告)号：US08344382B2

公开(公告)日：2013-01-01

申请号：US13001428

申请日：2009-06-26

申请人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

发明人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/78687

摘要： Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

摘要翻译： 提供了即使在450℃以下的低温反应性热CVD法中也能够使半导体晶体核沉积在氧化硅膜等绝缘膜上的方法。 作为其一种方法，在绝缘基板上形成第一半导体膜，然后在第一半导体膜的部分上形成半导体晶体核，并且同时形成第一半导体膜，而不是形成半导体晶体核的区域及其周边 通过蚀刻去除。 此后，使用半导体晶体核作为晶种形成第二半导体膜。

公开(公告)号：US20110108841A1

公开(公告)日：2011-05-12

申请号：US13001428

申请日：2009-06-26

申请人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

发明人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/78687

摘要： Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

摘要翻译： 提供了即使在450℃以下的低温反应性热CVD法中也能够使半导体晶体核沉积在氧化硅膜等绝缘膜上的方法。 作为其一种方法，在绝缘基板上形成第一半导体膜，然后在第一半导体膜的部分上形成半导体晶体核，并且同时形成第一半导体膜，而不是形成半导体晶体核的区域及其周边 通过蚀刻去除。 此后，使用半导体晶体核作为晶种形成第二半导体膜。