摘要:
A signal distribution circuit (3) includes (i) a redundancy TFT element (8) provided so as to have a channel width identical to those of driving TFT elements (7), (ii) first redundancy lines (9a, 9b), (iii) a second redundancy line (10), and (iv) a third redundancy line (11). It is therefore possible to provide a liquid crystal display device including the signal distribution circuit (3) in which, even in a case where a leaking part (a defect part) is generated in any of the driving TFT elements (7), it does not take long to restore the leaking part, and productivity can be improved, the driving TFT elements (7) keeping respective channel widths identical to one another even after the leaking part is restored.
摘要:
The present invention provides a shift register and a display device, each of which operates stably. The present invention relate to a shift register, comprising a thin-film transistor which includes a source electrode, a drain electrode, and a gate electrode, the thin-film transistor being a bottom gate thin-film transistor which includes a comb-shaped source/drain structure, the gate electrode being provided with at least one of a cut and an opening in at least one of a region overlapping with the source electrode and a region overlapping with the drain electrode.
摘要:
A second stem wires (17c), formed by a reflective pixel electrode layer formed as a different layer from first stem wires (17a), is provided in such a way as to extend along a long side of its adjacent one of the first stem wires (17a).This makes it possible to achieve a TFT array substrate (1) on which a gate drive circuit (15) and its wires (17a, 17b, 17c, 18) have been monolithically formed, wherein the width of a frame part in which the a gate drive circuit (15) and its wires (17a, 17b, 17c, 18) are formed can be reduced.
摘要:
Provided is a shift register configured by cascade connecting unit circuits each including a bootstrap circuit. In at least one example embodiment, for the unit circuits, a time period during which a transistor is in an ON state and a clock signal is high level corresponds to a clock passing period. Among transistors whose one conduction terminal is connected to a gate of the transistor, channel lengths of transistors configured such that a low-level potential is fed to gates of the transistors to turn the transistors to an OFF state in the clock passing period and that a low-level potential is applied to the conduction terminal of the transistors in the clock passing period are made longer than the channel length of the transistor. With this, it is possible to reduce a leakage current in the clock passing period, and to prevent the fluctuation of a gate potential of the transistor and dullness in an output signal from occurring.
摘要:
A liquid crystal display device according to the present invention includes a vertical alignment type liquid crystal layer 32. Each pixel electrode thereof 12 has a plurality of unit electrode portions 12a, each of which has a conductive film and slits 13 that have been cut through the conductive film. When a predetermined voltage is applied between the pixel electrode and a counter electrode, a liquid crystal domain is produced in association with each unit electrode portion and liquid crystal molecules in the liquid crystal domain come to have a substantially radially tilting alignment state. As a result, the device of the present invention achieves a wide viewing angle and a fast response characteristic.
摘要:
Transflective-type and reflection type liquid crystal display devices having a high image quality are provided with a good production efficiency.A liquid crystal display device according to the present invention is a liquid crystal display device which includes; a first substrate and a second substrate between which liquid crystal is interposed; a first electrode and a second electrode formed on the first substrate for applying a voltage for controlling an orientation of the liquid crystal; a transistor having an electrode which is electrically connected to the first electrode; a metal layer being formed on the first substrate and including a protrusion, a recess, or an aperture; and a reflective layer formed above the metal layer on the first substrate for reflecting incident light toward a display surface. The metal layer is made of a same material as that of a gate electrode of the transistor. The reflective layer includes a protrusion, a recess, or a level difference which is formed in accordance with a protrusion, a recess, or an aperture of the metal layer.
摘要:
A transflective-type and a reflection-type liquid crystal display device having a high reflection efficiency and a high image quality are provided. A liquid crystal display device of the present invention is a liquid crystal display device including a reflection region for reflecting incident light toward a display surface, wherein the reflection region includes a metal layer, an insulating layer formed on the metal layer, a semiconductor layer formed on the insulating layer, and a reflective layer formed on the semiconductor layer; a plurality of recesses are formed in at least one of the metal layer, the insulating layer and the semiconductor layer; a plurality of dents are formed in the reflective layer in the reflection region according to the plurality of recesses; and a shortest distance a between edge portions of at least two of the plurality of recesses is 4 μm or less.
摘要:
A reflection-type or transflective-type liquid crystal display device having a high image quality, which has an excellent efficiency of utility of reflected light, is provided at low cost.A liquid crystal display device according to the present invention is a liquid crystal display device having a plurality of pixels, and including, in each of the plurality of pixels, a reflection section for reflecting incident light toward a display surface. The reflection section includes a metal layer having a plurality of apertures, and a reflective layer formed on the metal layer with an insulating layer interposed therebetween. A surface of the reflective layer includes a plurality of recesses or protrusions formed in accordance with a cross-sectional shape of the metal layer. Regarding distance between two adjoining apertures among the plurality of apertures of the metal layer, a shortest distance is no less than 0.3 μm and no more than 3.0 μm.
摘要:
A transflective-type and a reflection-type liquid crystal display device having a high reflection efficiency and a high image quality are provided. A liquid crystal display device of the present invention is a liquid crystal display device including a reflection region for reflecting incident light toward a display surface, wherein the reflection region includes a metal layer, an insulating layer formed on the metal layer, a semiconductor layer formed on the insulating layer, and a reflective layer formed on the semiconductor layer; a plurality of recesses are formed in at least one of the metal layer, the insulating layer and the semiconductor layer; a plurality of dents are formed in the reflective layer in the reflection region according to the plurality of recesses; and a shortest distance a between edge portions of at least two of the plurality of recesses is 4 μm or less.
摘要:
Transflective-type and reflection type liquid crystal display devices having a high image quality are provided with a good production efficiency.A liquid crystal display device according to the present invention is a liquid crystal display device which includes; a first substrate and a second substrate between which liquid crystal is interposed; a first electrode and a second electrode formed on the first substrate for applying a voltage for controlling an orientation of the liquid crystal; a transistor having an electrode which is electrically connected to the first electrode; a metal layer being formed on the first substrate and including a protrusion, a recess, or an aperture; and a reflective layer formed above the metal layer on the first substrate for reflecting incident light toward a display surface. The metal layer is made of a same material as that of a gate electrode of the transistor. The reflective layer includes a protrusion, a recess, or a level difference which is formed in accordance with a protrusion, a recess, or an aperture of the metal layer.