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公开(公告)号：US20120069631A1
公开(公告)日：2012-03-22
申请号：US13303544
申请日：2011-11-23
IPC分类号： G11C11/00
CPC分类号： G11C13/02 , G11C2213/11 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/1625
摘要： A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen.
摘要翻译： 提供了一种电阻变化型存储器件，其中写入时的数据保持特性得到改善。 存储器件包括：多个存储元件，其中存储层设置在第一电极和第二电极之间，使得根据存储层的电特性的变化来写入或擦除数据; 以及对多个存储元件选择性地施加电压脉冲或电流脉冲的脉冲施加装置。 存储层包括离子源层，其包括离子传导材料和至少一种金属元素，离子源层还含有氧。
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公开(公告)号：US08569732B2
公开(公告)日：2013-10-29
申请号：US13303544
申请日：2011-11-23
IPC分类号： H01L47/00
CPC分类号： G11C13/02 , G11C2213/11 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/1625
摘要： A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen.
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公开(公告)号：US20090173930A1
公开(公告)日：2009-07-09
申请号：US12349644
申请日：2009-01-07
IPC分类号： H01L45/00
CPC分类号： G11C13/02 , G11C2213/11 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/1625
摘要： A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen.
摘要翻译： 提供了一种电阻变化型存储器件，其中写入时的数据保持特性得到改善。 存储器件包括：多个存储元件，其中存储层设置在第一电极和第二电极之间，使得根据存储层的电特性的变化来写入或擦除数据; 以及对多个存储元件选择性地施加电压脉冲或电流脉冲的脉冲施加装置。 存储层包括离子源层，其包括离子传导材料和至少一种金属元素，离子源层还含有氧。
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公开(公告)号：US20110175049A1
公开(公告)日：2011-07-21
申请号：US13004976
申请日：2011-01-12
IPC分类号： H01L45/00
CPC分类号： H01L45/142 , G11C13/0007 , G11C2213/51 , G11C2213/56 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/143 , H01L45/144 , H01L45/1625
摘要： A memory component includes: a first electrode; a memory layer; and a second electrode in this order, wherein the memory layer includes a high resistance layer which includes tellurium (Te) as the chief component among anion components and is formed on the first electrode side; and an ion source layer which includes at least one kind of metal element and at least one kind of chalcogen element among tellurium (Te), sulfur (S) and selenium (Se) and is formed on the second electrode side.
摘要翻译： 存储器组件包括：第一电极; 记忆层; 和第二电极，其中，所述存储层包括高电阻层，所述高电阻层包含碲（Te）作为阴离子成分中的主要成分，并形成在所述第一电极侧上; 以及离子源层，其在碲（Te），硫（S）和硒（Se）中包含至少一种金属元素和至少一种硫属元素，并且形成在第二电极侧。
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公开(公告)号：US08981325B2
公开(公告)日：2015-03-17
申请号：US12703247
申请日：2010-02-10
CPC分类号： G11C13/0011 , G11C13/0007 , G11C2213/11 , G11C2213/15 , G11C2213/33 , G11C2213/34 , G11C2213/56 , G11C2213/72 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A memory device 10 has an arrangement in which a memory thin film 4 is sandwiched between first and second electrodes 2 and 6, the memory thin film 6 contains at least rare earth elements, the memory thin film 4 or a layer 3 in contact with the memory thin film 4 contains any one of elements selected from Cu, Ag, Zn and the memory thin film 4 or the layer 3 in contact with the memory thin film 4 contains any one of elements selected from Te, S, Se. The memory device can record and read information with ease stably, and this memory device can be manufactured easily by a relatively simple manufacturing method.
摘要翻译： 记忆装置10具有这样的结构，其中存储薄膜4夹在第一和第二电极2和6之间，记忆薄膜6至少含有稀土元素，存储薄膜4或与 记忆薄膜4包含选自Cu，Ag，Zn和记忆薄膜4中的任一种元素，或者与存储薄膜4接触的层3包含选自Te，S，Se中的任何一种元素。 存储装置可以容易地稳定地记录和读取信息，并且可以通过相对简单的制造方法容易地制造该存储装置。
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26.发明申请METHOD FOR MANUFACTURING OPTICAL DISC MASTER AND METHOD FOR MANUFACTURING OPTICAL DISC 审中-公开用于制造光盘的方法和用于制造光盘的方法公开(公告)号：US20110279793A1
公开(公告)日：2011-11-17
申请号：US13187114
申请日：2011-07-20
IPC分类号： G03B27/00
CPC分类号： G11B7/261 , Y10S425/81 , Y10T428/24802
摘要： An apparatus for manufacturing an optical disc master, having (a) a turntable upon which is received a disc having a resist layer composed of a resist material, the resist material comprising an incomplete oxide of a transition metal on a substrate, the oxygen content of the incomplete oxide being smaller than the oxygen content of the stoichiometric composition corresponding to a valence of the transition metal, which increases the absorption of ultraviolet rays and visible light rays, the resist material being an amorphous inorganic material containing an oxide; and (b) an exposure system operatively configured to selectively expose the resist layer to ultraviolet rays or visible light.
摘要翻译： 一种用于制造光盘主机的设备，其具有（a）转盘，其上接收有具有由抗蚀剂材料构成的抗蚀剂层的光盘，所述抗蚀剂材料包括在基板上的过渡金属的不完全氧化物，氧含量 不完全氧化物小于对应于过渡金属价态的化学计量组成的氧含量，其增加紫外线和可见光线的吸收，抗蚀剂材料是含有氧化物的无定形无机材料; 和（b）曝光系统，可操作地构造成选择性地将抗蚀剂层暴露于紫外线或可见光。
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27.发明授权公开(公告)号：US07648671B2
公开(公告)日：2010-01-19
申请号：US10502038
申请日：2003-11-20
IPC分类号： H05B6/00
CPC分类号： G11B7/261 , G11B7/1267
摘要： The method of the present invention includes an exposing step in which a laser beam for recording modulated by an information signal corresponding to an information signal of an information concave and convex pattern formed on the optical disc is applied to an inorganic resist layer 101 formed on a substrate 100 to form an exposed pattern corresponding to the information concave and convex pattern on the optical disc, and a development step in which a concave and convex pattern corresponding to the information concave and convex pattern by the inorganic resist layer is formed. By applying a laser beam for estimation to a predetermined area on the inorganic resist layer in the exposing step to estimate recorded signal characteristics of the exposed pattern by the inorganic resist layer using reflected light of the laser beam for estimation, and controlling power of the laser beam for recording based on the estimated result, the aimed information recording on the optical disc can reliably be obtained.
摘要翻译： 本发明的方法包括曝光步骤，其中将用与在光盘上形成的信息凹凸图案的信息信号对应的信息信号进行记录的激光束施加到形成在光盘上的无机抗蚀剂层101上 基板100，以形成对应于光盘上的信息凹凸图案的曝光图案，以及形成与无机抗蚀剂层的信息凹凸图案相对应的凹凸图案的显影步骤。 通过在曝光步骤中将用于估计的激光束施加到无机抗蚀剂层上的预定区域，以使用用于估计的激光束的反射光通过无机抗蚀剂层估计曝光图案的记录信号特性，并且控制激光器的功率 基于估计结果记录的光束，可以可靠地获得在光盘上记录的目标信息。
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公开(公告)号：US20080171290A1
公开(公告)日：2008-07-17
申请号：US12077119
申请日：2008-03-17
CPC分类号： B82Y10/00 , G03F7/0043 , G11B7/261
摘要： A resist material and a nanofabrication method provide high-resolution nanofabrication without an expensive irradiation apparatus using, for example, electron beams or ion beams. That is, the resist material and the nanofabrication method provide finer processing using exposure apparatuses currently in use. A resist layer of an incompletely oxidized transition metal such as W and Mo is selectively exposed and developed to be patterned in a predetermined form. The incompletely oxidized transition metal herein is a compound having an oxygen content slightly deviated to a lower content from the stoichiometric oxygen content corresponding to a possible valence of the transition metal. In other words, the compound has an oxygen content lower than the stoichiometric oxygen content corresponding to a possible valence of the transition metal.
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公开(公告)号：US07175962B2
公开(公告)日：2007-02-13
申请号：US10474852
申请日：2003-02-20
IPC分类号： G03F7/004
CPC分类号： B82Y10/00 , G03F7/0043 , G11B7/261
摘要： A resist material and a nanofabrication method provide high-resolution nanofabrication without an expensive irradiation apparatus using, for example, electron beams or ion beams. That is, the resist material and the nanofabrication method provide finer processing using exposure apparatuses currently in use. A resist layer of an incompletely oxidized transition metal such as W and Mo is selectively exposed and developed to be patterned in a predetermined form. The incompletely oxidized transition metal herein is a compound having an oxygen content slightly deviated to a lower content from the stoichiometric oxygen content corresponding to a possible valence of the transition metal. In other words, the compound has an oxygen content lower than the stoichiometric oxygen content corresponding to a possible valence of the transition metal.
摘要翻译： 抗蚀剂材料和纳米制造方法提供高分辨率纳米制造，而不需要使用例如电子束或离子束的昂贵的照射装置。 也就是说，抗蚀剂材料和纳米制造方法使用目前使用的曝光设备提供更精细的处理。 不完全氧化的过渡金属如W和Mo的抗蚀剂层被选择性地暴露和显影以以预定形式图案化。 本文中不完全氧化的过渡金属是相对于过渡金属的可能化合价的化学计量氧含量略低于含量的氧含量的化合物。 换句话说，化合物的氧含量低于对应于过渡金属的可能化合价的化学计量的氧含量。
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公开(公告)号：US20050121697A1
公开(公告)日：2005-06-09
申请号：US10999050
申请日：2004-11-29
IPC分类号： G11C16/04 , G11C13/02 , H01L27/10 , H01L31/109 , H01L45/00
CPC分类号： G11C13/0011 , G11C13/0009 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/34 , G11C2213/51 , G11C2213/56 , G11C2213/72 , G11C2213/79 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/144 , H01L45/146
摘要： A storage device includes a first electrode, a second electrode facing the first electrode, an inter-electrode material layer provided between the first electrode and the second electrode, and a voltage application unit applying a predetermined voltage to the first and the second electrodes. Furthermore, an oxidation-reduction active material changeable into an electrode reaction inhibition layer by applying voltages to the first and the second electrodes is contained in a region that is covered by an electric field, the electric field being generated when the voltage is applied, and the electrode reaction inhibition layer is either formed along an interface region between the second electrode and the inter-electrode material layer, or changes an area thereof, or disappears depending on an application condition of the voltage to the first and the second.
摘要翻译： 存储装置包括第一电极，面对第一电极的第二电极，设置在第一电极和第二电极之间的电极间材料层，以及向第一和第二电极施加预定电压的电压施加单元。 此外，通过向第一和第二电极施加电压而可变化为电极反应抑制层的氧化还原活性物质被包含在被电场覆盖的区域中，电场在施加电压时产生，并且 电极反应抑制层沿着第二电极和电极间材料层之间的界面区域形成，或者改变其面积，或者根据第一和第二电压的施加条件而消失。
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