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公开(公告)号：US08981325B2
公开(公告)日：2015-03-17
申请号：US12703247
申请日：2010-02-10
CPC分类号： G11C13/0011 , G11C13/0007 , G11C2213/11 , G11C2213/15 , G11C2213/33 , G11C2213/34 , G11C2213/56 , G11C2213/72 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A memory device 10 has an arrangement in which a memory thin film 4 is sandwiched between first and second electrodes 2 and 6, the memory thin film 6 contains at least rare earth elements, the memory thin film 4 or a layer 3 in contact with the memory thin film 4 contains any one of elements selected from Cu, Ag, Zn and the memory thin film 4 or the layer 3 in contact with the memory thin film 4 contains any one of elements selected from Te, S, Se. The memory device can record and read information with ease stably, and this memory device can be manufactured easily by a relatively simple manufacturing method.
摘要翻译： 记忆装置10具有这样的结构，其中存储薄膜4夹在第一和第二电极2和6之间，记忆薄膜6至少含有稀土元素，存储薄膜4或与 记忆薄膜4包含选自Cu，Ag，Zn和记忆薄膜4中的任一种元素，或者与存储薄膜4接触的层3包含选自Te，S，Se中的任何一种元素。 存储装置可以容易地稳定地记录和读取信息，并且可以通过相对简单的制造方法容易地制造该存储装置。
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2.发明申请METHOD FOR MANUFACTURING OPTICAL DISC MASTER AND METHOD FOR MANUFACTURING OPTICAL DISC 审中-公开用于制造光盘的方法和用于制造光盘的方法公开(公告)号：US20110279793A1
公开(公告)日：2011-11-17
申请号：US13187114
申请日：2011-07-20
IPC分类号： G03B27/00
CPC分类号： G11B7/261 , Y10S425/81 , Y10T428/24802
摘要： An apparatus for manufacturing an optical disc master, having (a) a turntable upon which is received a disc having a resist layer composed of a resist material, the resist material comprising an incomplete oxide of a transition metal on a substrate, the oxygen content of the incomplete oxide being smaller than the oxygen content of the stoichiometric composition corresponding to a valence of the transition metal, which increases the absorption of ultraviolet rays and visible light rays, the resist material being an amorphous inorganic material containing an oxide; and (b) an exposure system operatively configured to selectively expose the resist layer to ultraviolet rays or visible light.
摘要翻译： 一种用于制造光盘主机的设备，其具有（a）转盘，其上接收有具有由抗蚀剂材料构成的抗蚀剂层的光盘，所述抗蚀剂材料包括在基板上的过渡金属的不完全氧化物，氧含量 不完全氧化物小于对应于过渡金属价态的化学计量组成的氧含量，其增加紫外线和可见光线的吸收，抗蚀剂材料是含有氧化物的无定形无机材料; 和（b）曝光系统，可操作地构造成选择性地将抗蚀剂层暴露于紫外线或可见光。
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3.发明授权公开(公告)号：US07648671B2
公开(公告)日：2010-01-19
申请号：US10502038
申请日：2003-11-20
IPC分类号： H05B6/00
CPC分类号： G11B7/261 , G11B7/1267
摘要： The method of the present invention includes an exposing step in which a laser beam for recording modulated by an information signal corresponding to an information signal of an information concave and convex pattern formed on the optical disc is applied to an inorganic resist layer 101 formed on a substrate 100 to form an exposed pattern corresponding to the information concave and convex pattern on the optical disc, and a development step in which a concave and convex pattern corresponding to the information concave and convex pattern by the inorganic resist layer is formed. By applying a laser beam for estimation to a predetermined area on the inorganic resist layer in the exposing step to estimate recorded signal characteristics of the exposed pattern by the inorganic resist layer using reflected light of the laser beam for estimation, and controlling power of the laser beam for recording based on the estimated result, the aimed information recording on the optical disc can reliably be obtained.
摘要翻译： 本发明的方法包括曝光步骤，其中将用与在光盘上形成的信息凹凸图案的信息信号对应的信息信号进行记录的激光束施加到形成在光盘上的无机抗蚀剂层101上 基板100，以形成对应于光盘上的信息凹凸图案的曝光图案，以及形成与无机抗蚀剂层的信息凹凸图案相对应的凹凸图案的显影步骤。 通过在曝光步骤中将用于估计的激光束施加到无机抗蚀剂层上的预定区域，以使用用于估计的激光束的反射光通过无机抗蚀剂层估计曝光图案的记录信号特性，并且控制激光器的功率 基于估计结果记录的光束，可以可靠地获得在光盘上记录的目标信息。
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公开(公告)号：US20080171290A1
公开(公告)日：2008-07-17
申请号：US12077119
申请日：2008-03-17
CPC分类号： B82Y10/00 , G03F7/0043 , G11B7/261
摘要： A resist material and a nanofabrication method provide high-resolution nanofabrication without an expensive irradiation apparatus using, for example, electron beams or ion beams. That is, the resist material and the nanofabrication method provide finer processing using exposure apparatuses currently in use. A resist layer of an incompletely oxidized transition metal such as W and Mo is selectively exposed and developed to be patterned in a predetermined form. The incompletely oxidized transition metal herein is a compound having an oxygen content slightly deviated to a lower content from the stoichiometric oxygen content corresponding to a possible valence of the transition metal. In other words, the compound has an oxygen content lower than the stoichiometric oxygen content corresponding to a possible valence of the transition metal.
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公开(公告)号：US07175962B2
公开(公告)日：2007-02-13
申请号：US10474852
申请日：2003-02-20
IPC分类号： G03F7/004
CPC分类号： B82Y10/00 , G03F7/0043 , G11B7/261
摘要： A resist material and a nanofabrication method provide high-resolution nanofabrication without an expensive irradiation apparatus using, for example, electron beams or ion beams. That is, the resist material and the nanofabrication method provide finer processing using exposure apparatuses currently in use. A resist layer of an incompletely oxidized transition metal such as W and Mo is selectively exposed and developed to be patterned in a predetermined form. The incompletely oxidized transition metal herein is a compound having an oxygen content slightly deviated to a lower content from the stoichiometric oxygen content corresponding to a possible valence of the transition metal. In other words, the compound has an oxygen content lower than the stoichiometric oxygen content corresponding to a possible valence of the transition metal.
摘要翻译： 抗蚀剂材料和纳米制造方法提供高分辨率纳米制造，而不需要使用例如电子束或离子束的昂贵的照射装置。 也就是说，抗蚀剂材料和纳米制造方法使用目前使用的曝光设备提供更精细的处理。 不完全氧化的过渡金属如W和Mo的抗蚀剂层被选择性地暴露和显影以以预定形式图案化。 本文中不完全氧化的过渡金属是相对于过渡金属的可能化合价的化学计量氧含量略低于含量的氧含量的化合物。 换句话说，化合物的氧含量低于对应于过渡金属的可能化合价的化学计量的氧含量。
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公开(公告)号：US20050121697A1
公开(公告)日：2005-06-09
申请号：US10999050
申请日：2004-11-29
IPC分类号： G11C16/04 , G11C13/02 , H01L27/10 , H01L31/109 , H01L45/00
CPC分类号： G11C13/0011 , G11C13/0009 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/34 , G11C2213/51 , G11C2213/56 , G11C2213/72 , G11C2213/79 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/144 , H01L45/146
摘要： A storage device includes a first electrode, a second electrode facing the first electrode, an inter-electrode material layer provided between the first electrode and the second electrode, and a voltage application unit applying a predetermined voltage to the first and the second electrodes. Furthermore, an oxidation-reduction active material changeable into an electrode reaction inhibition layer by applying voltages to the first and the second electrodes is contained in a region that is covered by an electric field, the electric field being generated when the voltage is applied, and the electrode reaction inhibition layer is either formed along an interface region between the second electrode and the inter-electrode material layer, or changes an area thereof, or disappears depending on an application condition of the voltage to the first and the second.
摘要翻译： 存储装置包括第一电极，面对第一电极的第二电极，设置在第一电极和第二电极之间的电极间材料层，以及向第一和第二电极施加预定电压的电压施加单元。 此外，通过向第一和第二电极施加电压而可变化为电极反应抑制层的氧化还原活性物质被包含在被电场覆盖的区域中，电场在施加电压时产生，并且 电极反应抑制层沿着第二电极和电极间材料层之间的界面区域形成，或者改变其面积，或者根据第一和第二电压的施加条件而消失。
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公开(公告)号：US09112149B2
公开(公告)日：2015-08-18
申请号：US13310830
申请日：2011-12-05
申请人： Hiroaki Sei , Shuichiro Yasuda , Masayuki Shimuta , Katsuhisa Aratani , Akira Kouchiyama , Tetsuya Mizuguchi , Kazuhiro Ohba
发明人： Hiroaki Sei , Shuichiro Yasuda , Masayuki Shimuta , Katsuhisa Aratani , Akira Kouchiyama , Tetsuya Mizuguchi , Kazuhiro Ohba
CPC分类号： H01L45/14 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/1625 , H01L45/1641
摘要： A memory element with reduced degradation of memory characteristics that is caused by deterioration of a memory layer, a method of manufacturing the memory element, and a memory device are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing fluoride, and an ion source layer disposed between the resistance change layer and the second electrode.
摘要翻译： 提供了由存储器层的劣化引起的存储器特性降低降低的存储元件，制造存储元件的方法和存储器件。 存储元件依次包括第一电极，存储层和第二电极。 存储层包括含有氟化物的电阻变化层和设置在电阻变化层和第二电极之间的离子源层。
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公开(公告)号：US08884397B2
公开(公告)日：2014-11-11
申请号：US12961088
申请日：2010-12-06
CPC分类号： G11C13/0011 , G11C13/0007 , G11C2213/11 , G11C2213/15 , G11C2213/33 , G11C2213/34 , G11C2213/56 , G11C2213/72 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A memory device 10 having an arrangement in which a memory thin film is sandwiched between first and second electrodes, the memory thin film contains at least rare earth elements, the memory thin film 4 or a layer in contact with the memory thin film contains any one of elements selected from Cu, Ag, Zn and the memory thin film or the layer in contact with the memory thin film contains any one of elements selected from Te, S, Se.
摘要翻译： 具有这样一种结构的存储器件10，其中存储薄膜夹在第一和第二电极之间，存储薄膜至少含有稀土元素，存储薄膜4或与存储薄膜接触的层包含任何一种 选自Cu，Ag，Zn和记忆薄膜的元素或与记忆薄膜接触的层包含选自Te，S，Se中的任何一种元素。
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9.发明授权Memory element and memory device comprising memory layer positioned between first and second electrodes 有权存储元件和存储器件包括位于第一和第二电极之间的存储器层公开(公告)号：US07786459B2
公开(公告)日：2010-08-31
申请号：US11280561
申请日：2005-11-15
IPC分类号： H01L29/02
CPC分类号： G11C13/0011 , G11C2213/11 , G11C2213/15 , G11C2213/34 , G11C2213/56 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146
摘要： A memory element 10 includes a memory layer 4 positioned between a first electrode 2 and a second electrode 6, in which an element selected from Cu, Ag, and Zn is contained in the memory layer 4 or in a layer 3 in contact with the memory layer 4, a resistance of the memory element 10 is changed by a voltage applied to the memory element 10 to perform recording of information, and in an erasing process of changing from a recorded state of low resistance value of the memory element 10 to an erased state of high resistance value of the memory element 10, a fluctuation, which is caused by an increase of the voltage applied to the memory element 10, of the resistance value of the memory element 10 at the end of the erasing process is within ten times at a maximum.
摘要翻译： 存储元件10包括位于第一电极2和第二电极6之间的存储层4，其中选自Cu，Ag和Zn的元素包含在存储层4中或与存储器接触的层3中 层4，存储元件10的电阻被施加到存储元件10的电压改变以进行信息的记录，并且在从存储元件10的低电阻值的记录状态改变为擦除的擦除处理 存储元件10的高电阻值的状态，由擦除处理结束时的存储元件10的电阻值的升高引起的由存储元件10施加的电压引起的波动为十倍以内 最大。
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10.发明申请METHOD FOR MANUFACTURING OPTICAL DISC MASTER AND METHOD FOR MANUFACTURING OPTICAL DISC 失效用于制造光盘的方法和用于制造光盘的方法公开(公告)号：US20100112491A1
公开(公告)日：2010-05-06
申请号：US12635314
申请日：2009-12-10
IPC分类号： G03F7/20
CPC分类号： G11B7/261 , Y10S425/81 , Y10T428/24802
摘要： A method for manufacturing an optical disc master using an existing exposure system, and a method for manufacturing an optical disc having higher recording capacity. The method for manufacturing an optical disc, using a master to produce the optical disc having an irregular pattern thereon, the master being produced by the steps of forming a resist layer composed of a resist material including an incomplete oxide of a transition metal such as W or Mo on a substrate, the oxygen content of the incomplete oxide being smaller than the oxygen content of the stoichiometric composition corresponding to a valence of the transition metal; selectively exposing the resist layer with laser according to a recording signal pattern using a light source with an irradiation power that is less than an irradiation threshold power at which exposure of the resist starts; and developing the resist layer to form the predetermined irregular pattern.
摘要翻译： 一种使用现有曝光系统制造光盘母盘的方法，以及一种制造具有较高记录容量的光盘的方法。 制造光盘的方法，使用母盘来制造其上具有不规则图案的光盘，通过以下步骤制造母版：通过形成由包括过渡金属的不完全氧化物如W的抗蚀剂材料构成的抗蚀剂层 或Mo，不完全氧化物的氧含量小于对应于过渡金属的化合价的化学计量组成的氧含量; 使用具有小于抗蚀剂开始曝光的照射阈值功率的照射功率的光源根据记录信号图案选择性地曝光抗蚀剂层; 并显影抗蚀剂层以形成预定的不规则图案。
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