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Patent Agency Ranking
公开(公告)号：US09858996B2
公开(公告)日：2018-01-02
申请号：US15426070
申请日：2017-02-07
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
CPC classification number: G11C11/5642 , G06F3/0604 , G06F3/0622 , G06F3/0629 , G06F3/0638 , G06F3/0679 , G11C11/5628 , G11C16/08 , G11C16/26
Abstract: A memory access module for performing memory access management of a storage device including a plurality of storage cells includes: sensing means for performing a plurality of sensing operations respectively corresponding to a plurality of different sensing voltages in order to generate a first digital value and a second digital value of a storage cell; processing means for using the first digital value and the second digital value to obtain soft information of a same bit stored in the storage cell; decoding means for using the soft information to perform soft decoding; and controlling means for accessing the storage device. The controlling means includes: storage means for storing a program code; and processing means for executing a program code to control access to the storage device and manage the plurality of storage cells.
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公开(公告)号：US20170148511A1
公开(公告)日：2017-05-25
申请号：US15426070
申请日：2017-02-07
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
CPC classification number: G11C11/5642 , G06F3/0604 , G06F3/0622 , G06F3/0629 , G06F3/0638 , G06F3/0679 , G11C11/5628 , G11C16/08 , G11C16/26
Abstract: A memory access module for performing memory access management of a storage device including a plurality of storage cells includes: sensing means for performing a plurality of sensing operations respectively corresponding to a plurality of different sensing voltages in order to generate a first digital value and a second digital value of a storage cell; processing means for using the first digital value and the second digital value to obtain soft information of a same bit stored in the storage cell; decoding means for using the soft information to perform soft decoding; and controlling means for accessing the storage device. The controlling means includes: storage means for storing a program code; and processing means for executing a program code to control access to the storage device and manage the plurality of storage cells.
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23.发明授权Method for accessing flash memory having pages used for data backup and associated memory device 有权用于访问具有用于数据备份的页面和相关联的存储器设备的闪存的方法公开(公告)号：US09384125B2
公开(公告)日：2016-07-05
申请号：US13920074
申请日：2013-06-17
Applicant: Silicon Motion Inc.
Inventor： Hsiao-Te Chang , Chun-Yi Chen
IPC: G06F12/02
CPC classification number: G06F12/0246 , G06F2212/1032
Abstract: The present invention provides a method for accessing a flash memory, where a block of the flash memory includes pages whose quantity is (2N+M), N and M are positive integers. The method includes: writing a data stream into 1st-(2N)th pages, and backing up data of a portion of the 1st-(2N)th pages into (2N+1)th-(2N+M)th pages.
Abstract translation: 本发明提供了一种用于访问闪速存储器的方法，其中闪存的块包括数量为（2N + M），N和M为正整数的页。 该方法包括：将数据流写入第（2N）页，并将第一（2N）页的一部分的数据备份到（2N + 1）th（（2N + M））页中。
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24.发明申请METHOD FOR PERFORMING MEMORY ACCESS MANAGEMENT, AND ASSOCIATED MEMORY DEVICE AND CONTROLLER THEREOF 有权执行存储器访问管理的方法及其相关的存储器件及其控制器公开(公告)号：US20160093371A1
公开(公告)日：2016-03-31
申请号：US14956410
申请日：2015-12-02
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
CPC classification number: G11C11/5642 , G06F3/0604 , G06F3/0622 , G06F3/0629 , G06F3/0638 , G06F3/0679 , G11C11/5628 , G11C16/08 , G11C16/26
Abstract: A method for performing memory access includes: performing a plurality of sensing operations respectively corresponding to a plurality of different sensing voltages to generate a first digital value of a Flash cell of a Flash memory and a second digital value of the Flash cell of the Flash memory; using the first digital value and the second digital value to obtain soft information of a bit stored in the Flash cell; and using the soft information to perform soft decoding.
Abstract translation: 一种用于执行存储器访问的方法包括：执行分别对应于多个不同感测电压的多个感测操作，以产生闪存的闪存单元的第一数字值和闪存的闪存单元的第二数字值 ; 使用第一数字值和第二数字值来获得存储在闪存单元中的位的软信息; 并使用软信息进行软解码。
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25.发明申请METHOD FOR ACCESSING FLASH MEMORY HAVING PAGES USED FOR DATA BACKUP AND ASSOCIATED MEMORY DEVICE 有权用于访问用于数据备份和相关存储器件的页面的闪速存储器的方法公开(公告)号：US20130339584A1
公开(公告)日：2013-12-19
申请号：US13920074
申请日：2013-06-17
Applicant: Silicon Motion Inc.
Inventor： Hsiao-Te Chang , Chun-Yi Chen
IPC: G06F12/02
CPC classification number: G06F12/0246 , G06F2212/1032
Abstract: The present invention provides a method for accessing a flash memory, where a block of the flash memory includes pages whose quantity is (2N+M), N and M are positive integers. The method includes: writing a data stream into 1st-(2N)th pages, and backing up data of a portion of the 1st-(2N)th pages into (2N+1)th-(2N+M)th pages.
Abstract translation: 本发明提供了一种用于访问闪速存储器的方法，其中闪存的块包括数量为（2N + M），N和M为正整数的页。 该方法包括：将数据流写入第（2N）页，并将第一（2N）页的一部分的数据备份到（2N + 1）th（（2N + M））页中。
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