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公开(公告)号:US20180275914A1
公开(公告)日:2018-09-27
申请号:US15863894
申请日:2018-01-06
Applicant: Silicon Motion, Inc.
Inventor: Kuan-Yu KE
IPC: G06F3/06
CPC classification number: G06F3/0652 , G06F3/0604 , G06F3/0608 , G06F3/061 , G06F3/0679 , G06F3/0688 , G06F12/0246 , G06F2212/7205
Abstract: The invention introduces a method for garbage collection, performed by a processing unit, including at least the following steps: executing instructions of a GC (garbage collection) process to direct a first access interface to read data from a storage unit, collect good data from the read data and direct the first access interface to program the good data into a spare block of the storage unit. During the GC process, each time that a timer has counted to a time period, the processing unit directs a second access interface to clock a portion of data requested by a host device out to the host device and resets the timer.
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公开(公告)号:US20170322854A1
公开(公告)日:2017-11-09
申请号:US15660029
申请日:2017-07-26
Applicant: Silicon Motion, Inc.
Inventor: Kuan-Yu KE
CPC classification number: G06F11/1469 , G06F3/0619 , G06F3/065 , G06F3/0679 , G06F2201/84
Abstract: A data storage device is provided. The data storage device includes a flash memory and a controller. The flash memory includes a plurality of blocks. Each block includes a plurality of pages. when the data storage device is resumed from a power-off event, the controller selects a first block which was written last before the power-off event among the plurality of blocks and writes data of a plurality of first pages of the first block into a plurality of second pages of the first block.
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公开(公告)号:US20160103730A1
公开(公告)日:2016-04-14
申请号:US14614447
申请日:2015-02-05
Applicant: Silicon Motion, Inc.
Inventor: Kuan-Yu KE
IPC: G06F11/07
CPC classification number: G06F11/1402 , G06F11/14 , G06F11/1441 , G06F13/00 , G11C11/5642 , G11C16/3404 , G11C16/3418 , G11C29/42 , G11C29/52
Abstract: For single-level cell flash memories and multi-level cell flash memories, different operations can be performed according to their stability when an abnormal status is terminated. Specifically, for the multi-level cell flash memories, when the abnormal status is terminated, a now physical block is used to proceed with write operation, and the previous physical block(s) would not be written any more. On the contrary, for the single-level cell flash memories, when the abnormal status is terminated, the controller needs to perform corresponding operations on the last physical page of the previous physical block(s).
Abstract translation: 对于单级单元闪存和多级单元闪存,当异常状态终止时,可以根据其稳定性执行不同的操作。 具体来说,对于多电平单元闪存,当异常状态终止时,使用现在的物理块进行写入操作,并且不再写入先前的物理块。 相反,对于单级单元闪存,当异常状态终止时,控制器需要对先前物理块的最后物理页执行相应的操作。
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公开(公告)号:US20160103631A1
公开(公告)日:2016-04-14
申请号:US14614444
申请日:2015-02-05
Applicant: Silicon Motion, Inc.
Inventor: Kuan-Yu KE
IPC: G06F3/06
CPC classification number: G06F3/0679 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0647
Abstract: A non-volatile memory device is provided. The non-volatile memory device includes a non-volatile memory, a connection interface, and a controller. The non-volatile memory is divided into a plurality of physical blocks. Each physical block is divided into a plurality of physical pages. The connection interface is connected to a host. The controller is connected to the connection interface. When the controller performs a block-reconfiguration operation, the controller re-adjusts a position in the physical blocks where data is disposed to obtain a usable physical block. Movement of one portion of the data related to the block-reconfiguration operation is performed when the controller operations an initial operation. Movement of another portion of the data related to the block-reconfiguration operation is performed when the controller processes a read command from the host.
Abstract translation: 提供了一种非易失性存储器件。 非易失性存储器件包括非易失性存储器,连接接口和控制器。 非易失性存储器被分成多个物理块。 每个物理块被分成多个物理页。 连接接口连接到主机。 控制器连接到连接接口。 当控制器执行块重配置操作时,控制器重新调整在其中设置数据的物理块中的位置以获得可用的物理块。 当控制器操作初始操作时,执行与块重新配置操作相关的数据的一部分的移动。 当控制器处理来自主机的读取命令时,执行与块重新配置操作相关的数据的另一部分的移动。
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