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21.发明授权Method for performing memory access management, and associated memory device and controller thereof 有权用于执行存储器访问管理的方法及其相关联的存储器件及其控制器公开(公告)号：US09520185B2
公开(公告)日：2016-12-13
申请号：US14956410
申请日：2015-12-02
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
CPC classification number: G11C11/5642 , G06F3/0604 , G06F3/0622 , G06F3/0629 , G06F3/0638 , G06F3/0679 , G11C11/5628 , G11C16/08 , G11C16/26
Abstract: A method for performing memory access includes: performing a plurality of sensing operations respectively corresponding to a plurality of different sensing voltages to generate a first digital value of a Flash cell of a Flash memory and a second digital value of the Flash cell of the Flash memory; using the first digital value and the second digital value to obtain soft information of a bit stored in the Flash cell; and using the soft information to perform soft decoding.
Abstract translation: 一种用于执行存储器访问的方法包括：执行分别对应于多个不同感测电压的多个感测操作，以产生闪存的闪存单元的第一数字值和闪存的闪存单元的第二数字值 ; 使用第一数字值和第二数字值来获得存储在闪存单元中的位的软信息; 并使用软信息进行软解码。
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公开(公告)号：US10942677B2
公开(公告)日：2021-03-09
申请号：US16257022
申请日：2019-01-24
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Wen-Long Wang
Abstract: A method for performing access management of a memory device and associated apparatus (e.g. the memory device and controller thereof such as a memory controller within the memory device, an associated host device and an associated electronic device) are provided. The method may include: when the host device sends a host command to the memory device, utilizing the memory controller to estimate a completion time of the host command, to generate completion time information corresponding to the completion time; and utilizing the memory controller to send the completion time information to the host device, to allow the host device to perform polling after the completion time to obtain execution result of the host command.
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公开(公告)号：US10854285B2
公开(公告)日：2020-12-01
申请号：US16656533
申请日：2019-10-17
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
Abstract: A method for performing memory access includes: performing a first sensing operation corresponding to a first sensing voltage and performing at least a second sensing operation corresponding to a second sensing voltage to respectively generate a first digital value of a Flash cell of a Flash memory and a second digital value of the Flash cell of the Flash memory; using the first digital value, the second digital value, and charge distribution statistics information of the Flash memory to obtain soft information of a bit stored in the Flash cell, wherein the soft information corresponds to a threshold voltage of the Flash cell; and using the soft information to perform soft decoding.
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公开(公告)号：US20200264778A1
公开(公告)日：2020-08-20
申请号：US16278182
申请日：2019-02-18
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Wen-Long Wang
IPC: G06F3/06
Abstract: A method for performing data-compression management in a storage server may include: receiving data from a host device; performing entropy detection on a plurality of sets of partial data to generate entropy detection values of the plurality of sets of partial data, respectively; classifying the plurality of sets of partial data according to the entropy detection values of the plurality of sets of partial data, respectively, to perform data compression on at least one portion of the plurality of sets of partial data through a plurality of data compression modules, respectively, wherein the plurality of data compression modules correspond to different compression capabilities, respectively; and storing the plurality of sets of partial data into at least one storage device of the storage server and recording address mapping information of the plurality of sets of partial data, respectively. An associated apparatus is also provided.
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公开(公告)号：US20200241795A1
公开(公告)日：2020-07-30
申请号：US16257022
申请日：2019-01-24
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Wen-Long Wang
Abstract: A method for performing access management of a memory device and associated apparatus (e.g. the memory device and controller thereof such as a memory controller within the memory device, an associated host device and an associated electronic device) are provided. The method may include: when the host device sends a host command to the memory device, utilizing the memory controller to estimate a completion time of the host command, to generate completion time information corresponding to the completion time; and utilizing the memory controller to send the completion time information to the host device, to allow the host device to perform polling after the completion time to obtain execution result of the host command.
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Patent Agency Ranking
公开(公告)号：US20190027214A1
公开(公告)日：2019-01-24
申请号：US16127240
申请日：2018-09-11
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
Abstract: A Flash memory access module performs memory access management of a Flash storage device including a plurality of storage cells. The Flash memory access module includes: a read only memory for storing a program code; and a microprocessor which executes the program code to perform the following steps: performing a first sensing operation corresponding to a first sensing voltage in a storage cell, and performing a second sensing operation in the storage cell; using the first sensing operation and at least the second sensing operation to generate a first digital value and a second digital value, respectively, of the storage cell; using the first digital value and the second digital value to obtain soft information of a same bit stored in the storage cell; and using the soft information to perform soft decoding.
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公开(公告)号：US10102904B2
公开(公告)日：2018-10-16
申请号：US15679178
申请日：2017-08-17
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
Abstract: A memory access module for performing memory access management of a storage device includes a plurality of storage cells. Each storage cell has a number of possible bit(s) directly corresponding to possible states of the storage cell. The memory access module further includes: a read only memory for storing a program code; and a microprocessor, coupled to the read only memory, for executing the program code to perform the following steps: performing a plurality of sensing operations, wherein a first sensing operation corresponds to a first sensing voltage, and each subsequent sensing operation corresponds to a sensing voltage determined according to a result of the previous sensing operation; using the plurality of sensing operations to generate a first digital value and a second digital value of a storage cell; using the first and the second digital value to obtain soft information of a same bit stored in the storage cell; and using the soft information to perform soft decoding.
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公开(公告)号：US09858996B2
公开(公告)日：2018-01-02
申请号：US15426070
申请日：2017-02-07
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
CPC classification number: G11C11/5642 , G06F3/0604 , G06F3/0622 , G06F3/0629 , G06F3/0638 , G06F3/0679 , G11C11/5628 , G11C16/08 , G11C16/26
Abstract: A memory access module for performing memory access management of a storage device including a plurality of storage cells includes: sensing means for performing a plurality of sensing operations respectively corresponding to a plurality of different sensing voltages in order to generate a first digital value and a second digital value of a storage cell; processing means for using the first digital value and the second digital value to obtain soft information of a same bit stored in the storage cell; decoding means for using the soft information to perform soft decoding; and controlling means for accessing the storage device. The controlling means includes: storage means for storing a program code; and processing means for executing a program code to control access to the storage device and manage the plurality of storage cells.
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公开(公告)号：US20170148511A1
公开(公告)日：2017-05-25
申请号：US15426070
申请日：2017-02-07
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
CPC classification number: G11C11/5642 , G06F3/0604 , G06F3/0622 , G06F3/0629 , G06F3/0638 , G06F3/0679 , G11C11/5628 , G11C16/08 , G11C16/26
Abstract: A memory access module for performing memory access management of a storage device including a plurality of storage cells includes: sensing means for performing a plurality of sensing operations respectively corresponding to a plurality of different sensing voltages in order to generate a first digital value and a second digital value of a storage cell; processing means for using the first digital value and the second digital value to obtain soft information of a same bit stored in the storage cell; decoding means for using the soft information to perform soft decoding; and controlling means for accessing the storage device. The controlling means includes: storage means for storing a program code; and processing means for executing a program code to control access to the storage device and manage the plurality of storage cells.
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30.发明申请METHOD FOR PERFORMING MEMORY ACCESS MANAGEMENT, AND ASSOCIATED MEMORY DEVICE AND CONTROLLER THEREOF 有权执行存储器访问管理的方法及其相关的存储器件及其控制器公开(公告)号：US20160093371A1
公开(公告)日：2016-03-31
申请号：US14956410
申请日：2015-12-02
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
CPC classification number: G11C11/5642 , G06F3/0604 , G06F3/0622 , G06F3/0629 , G06F3/0638 , G06F3/0679 , G11C11/5628 , G11C16/08 , G11C16/26
Abstract: A method for performing memory access includes: performing a plurality of sensing operations respectively corresponding to a plurality of different sensing voltages to generate a first digital value of a Flash cell of a Flash memory and a second digital value of the Flash cell of the Flash memory; using the first digital value and the second digital value to obtain soft information of a bit stored in the Flash cell; and using the soft information to perform soft decoding.
Abstract translation: 一种用于执行存储器访问的方法包括：执行分别对应于多个不同感测电压的多个感测操作，以产生闪存的闪存单元的第一数字值和闪存的闪存单元的第二数字值 ; 使用第一数字值和第二数字值来获得存储在闪存单元中的位的软信息; 并使用软信息进行软解码。
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