公开(公告)号：US20180159498A1

公开(公告)日：2018-06-07

申请号：US15735477

申请日：2016-06-09

Applicant: Soitec

Inventor： Arnaud Castex ,  Daniel Delprat ,  Bernard Aspar ,  Ionut Radu

IPC: H03H9/02 ,  H03H3/10

Abstract: The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

公开(公告)号：US20150235851A1

公开(公告)日：2015-08-20

申请号：US14434624

申请日：2013-10-11

Applicant: SOITEC

Inventor： Marcel Broekaart ,  Arnaud Castex

IPC: H01L21/18 ,  B32B37/00 ,  B32B37/10

CPC classification number: H01L21/187 ,  B32B37/0007 ,  B32B37/1009 ,  B32B2037/0092 ,  B32B2307/20 ,  B32B2457/14

Abstract: The disclosure relates to a method of bonding by molecular adhesion comprising the positioning of a first wafer and of a second wafer within a hermetically sealed vessel, the evacuation of the vessel to a first pressure lower than or equal to 400 hPa, the adjustment of the pressure in the vessel to a second pressure higher than the first pressure by introduction of a dry gas, and bringing the first and second wafers into contact, followed by the initiation of the propagation of a bonding wave between the two wafers, while maintaining the vessel at the second pressure.

Abstract translation: 本发明涉及一种通过分子粘合进行粘合的方法，包括将第一晶片和第二晶片定位在密封容器内，将容器排空至低于或等于400hPa的第一压力， 通过引入干燥气体将容器中的压力升至高于第一压力的第二压力，并使第一和第二晶片接触，随后在两个晶片之间引起粘结波的传播，同时保持容器 在第二个压力。