公开(公告)号：US07368385B2

公开(公告)日：2008-05-06

申请号：US11182066

申请日：2005-07-15

申请人： Christoph Nölscher ,  Dietmar Temmler ,  Peter Moll

发明人： Christoph Nölscher ,  Dietmar Temmler ,  Peter Moll

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088

摘要： The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure on the surface of the substrate, which has structure elements that are arranged regularly and are spaced apart essentially identically. A second method involves forming spacers on the surface of the substrate, which adjoin sidewalls of the structure elements of the first partial structure, cutouts being provided between the spacers. A third method step involves introducing filling material into the cutouts between the spacers, a surface of the spacers being uncovered. A fourth method step involves removing the spacers in order to form a second partial structure having the filling material and having structure elements that are arranged regularly and are spaced apart essentially identically. The structure to be produced is composed of the first partial structure and the second partial structure.

摘要翻译： 本发明涉及一种在基板表面上制造用作蚀刻掩模的结构的方法。 在这种情况下，第一种方法包括在衬底的表面上形成第一部分结构，其具有规则地排列并且基本相同地间隔开的结构元件。 第二种方法包括在衬底的表面上形成间隔物，其邻接第一部分结构的结构元件的侧壁，在间隔物之间​​提供切口。 第三种方法步骤包括将填充材料引入间隔件之间的切口中，间隔件的表面未被覆盖。 第四种方法步骤包括去除间隔物，以便形成具有填充材料的第二部分结构，并具有规则排列的结构元件并且基本相同地间隔开。 要制造的结构由第一部分结构和第二部分结构组成。

公开(公告)号：US20060024621A1

公开(公告)日：2006-02-02

申请号：US11182066

申请日：2005-07-15

申请人： Christoph Nölscher ,  Dietmar Temmler ,  Peter Moll

发明人： Christoph Nölscher ,  Dietmar Temmler ,  Peter Moll

IPC分类号： G03F7/00

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088

摘要： The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure on the surface of the substrate, which has structure elements that are arranged regularly and are spaced apart essentially identically. A second method involves forming spacers on the surface of the substrate, which adjoin sidewalls of the structure elements of the first partial structure, cutouts being provided between the spacers. A third method step involves introducing filling material into the cutouts between the spacers, a surface of the spacers being uncovered. A fourth method step involves removing the spacers in order to form a second partial structure having the filling material and having structure elements that are arranged regularly and are spaced apart essentially identically. The structure to be produced is composed of the first partial structure and the second partial structure.

摘要翻译： 本发明涉及一种在基板表面上制造用作蚀刻掩模的结构的方法。 在这种情况下，第一种方法包括在衬底的表面上形成第一部分结构，其具有规则地排列并且基本相同地间隔开的结构元件。 第二种方法包括在衬底的表面上形成间隔物，其邻接第一部分结构的结构元件的侧壁，在间隔物之间​​提供切口。 第三种方法步骤包括将填充材料引入间隔件之间的切口中，间隔件的表面未被覆盖。 第四种方法步骤包括去除间隔物，以便形成具有填充材料的第二部分结构，并具有规则排列的结构元件并且基本相同地间隔开。 要制造的结构由第一部分结构和第二部分结构组成。

公开(公告)号：US20050056615A1

公开(公告)日：2005-03-17

申请号：US10911294

申请日：2004-08-04

申请人： Peter Moll ,  Stefan Tegen

发明人： Peter Moll ,  Stefan Tegen

IPC分类号： C23F1/00 ,  C23F4/00 ,  H01L21/311

CPC分类号： H01L21/31122

摘要： This invention relates to a method for the selective and directed plasma etching of aluminum oxide, in which a mixture having the following constituents is used for etching: a. a polymerizing gas comprising at least partially unsaturated, perfluorinated hydrocarbon compounds; b. optionally a compound having the formula CHxFy, where x=1-3 and y=4-x; c. oxygen; and d. a suitable carrier gas; and this mixture as a plasma, is brought into contact with the aluminum oxide to be etched.

摘要翻译： 本发明涉及一种用于氧化铝选择性和定向等离子体蚀刻的方法，其中具有以下成分的混合物用于蚀刻：a。 包含至少部分不饱和的全氟化烃化合物的聚合气体; b。 任选地具有式CH x F y的化合物，其中x = 1-3和y = 4-x; C。 氧; 和d。 合适的载气; 并将作为等离子体的混合物与待蚀刻的氧化铝接触。

公开(公告)号：US06541372B2

公开(公告)日：2003-04-01

申请号：US09801213

申请日：2001-03-07

申请人： Stephan Wege ,  Peter Moll

发明人： Stephan Wege ,  Peter Moll

IPC分类号： H01L214763

CPC分类号： H01L21/76852 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76885

摘要： A simple to manufacture conductor structure is described which requires only a small number of process steps. The conductor structure contains a structured, first insulating layer to which a first passivation layer is applied. A layer of conductive material is applied thereto and in turn a second passivation layer is applied to the layer of conductive material. A hard mask is applied to the second passivation layer. The layer of conductive material is removed in regions defined by the hard mask. The first passivation layer is removed in the regions defined by the hard mask by sputtering and is at least partially deposited again on the side wall of the layer of conductive material.