公开(公告)号：US06566705B1

公开(公告)日：2003-05-20

申请号：US10026320

申请日：2001-12-20

申请人： Michael David Church

发明人： Michael David Church

IPC分类号： H01L2976

CPC分类号： H01L29/66825 ,  H01L29/7885

摘要： An EPROM structure includes a NMOS transistor integrated with a capacitor. The terminal names of the NMOS transistor follow the conventional nomenclature: drain, source, body and gate. The gate of the NMOS transistor is connected directly and exclusively to one of the capacitor plates. In this configuration, the gate is now referred to as the “floating gate”. The remaining side of the capacitor is referred to as the “control gate”.

摘要翻译： EPROM结构包括与电容器集成的NMOS晶体管。 NMOS晶体管的端子名称遵循常规命名法：漏极，源极，主体和栅极。 NMOS晶体管的栅极直接连接到电容器板之一。 在这种配置中，现在将栅极称为“浮动栅极”。 电容器的剩余侧称为“控制栅极”。

公开(公告)号：US5856695A

公开(公告)日：1999-01-05

申请号：US917635

申请日：1992-07-20

申请人： Akira Ito ,  Michael David Church

发明人： Akira Ito ,  Michael David Church

IPC分类号： G05F3/30 ,  G11C27/02 ,  H01L21/8249 ,  H01L27/02 ,  H01L27/06 ,  H03F1/52 ,  H03F3/50 ,  H03G1/00 ,  H03K5/15 ,  H03K17/22 ,  H03M1/16 ,  H03M1/36 ,  H01L29/68 ,  H01L29/72

CPC分类号： G05F3/30 ,  G11C27/026 ,  H01L21/8249 ,  H01L27/0214 ,  H01L27/0623 ,  H01L27/0635 ,  H01L27/0688 ,  H03F1/523 ,  H03F3/505 ,  H03G1/0082 ,  H03K17/223 ,  H03K5/15 ,  H03M1/162 ,  H03F2200/294 ,  H03M1/365

摘要： A BiCMOS process which provides both low voltage (digital) and high voltage (analog) CMOS devices. The high voltage NMOS devices have a compensated drain formed by the NPN and PNP base implants. The PNP base plus the high voltage NMOS drain carrier concentrations are both optimized by adjustment of the two variables N base implant dose and P base implant dose; this determines the NPN base carrier concentration which turns out to provide good NPN characteristics. Low voltage NMOS source and drain implants employ a higher dose and may also be used for the high voltage NMOS source. The NPN emitter doping may also be used for a contact to the high voltage NMOS drain contact.

摘要翻译： 提供低电压（数字）和高电压（模拟）CMOS器件的BiCMOS工艺。 高压NMOS器件具有由NPN和PNP基极植入物形成的补偿漏极。 PNP基极加上高压NMOS漏极载流子浓度都通过调整两个变量N基础植入剂量和P基础植入剂量进行优化; 这确定了NPN基载波浓度，证明其具有良好的NPN特性。 低电压NMOS源极和漏极注入采用更高的剂量，也可用于高电压NMOS源。 NPN发射极掺杂也可用于与高压NMOS漏极接触的接触。