公开(公告)号：US06232850B1

公开(公告)日：2001-05-15

申请号：US09256074

申请日：1999-02-24

申请人： Masanori Ikari ,  Masayuki Tanno ,  Toshihiko Ryuo ,  Takao Kuki ,  Toshihiro Nomoto

发明人： Masanori Ikari ,  Masayuki Tanno ,  Toshihiko Ryuo ,  Takao Kuki ,  Toshihiro Nomoto

IPC分类号： H01P1215

CPC分类号： H03H2/001

摘要： A magnetostatic wave device includes a Gd3Ga5O12 substrate off-angled from a {110} plane. A magnetic thin film including a crystal of garnet is formed on the Gd3Ga5O12 substrate by liquid-phase epitaxy. A transducer operates for exciting magnetostatic wave in the magnetic thin film in response to an RF electric signal. A bias magnetic field is applied to the magnetic thin film. There is a relation as 20°≦|&thgr;1+&thgr;2|≦35°, where “&thgr;1” denotes an angle between a longitudinal direction of the transducer and a orientation of the crystal in the magnetic thin film, and “&thgr;2” denotes an angle between a transverse direction of the transducer and a specified direction. The specified direction is parallel to a line of intersection between a horizontal plane of the magnetic thin film and a given plane which is perpendicular to the horizontal plane of the magnetic thin film and which contains a direction of the bias magnetic field. Also, there is a relation as |&thgr;3|≦75°, where “&thgr;3” denotes an angle between the specified direction and the direction of the bias magnetic field.

摘要翻译： 静磁波装置包括从{110}平面偏斜的Gd 3 Ga 5 O 12衬底。 通过液相外延在Gd3Ga5O12基板上形成包含石榴石晶体的磁性薄膜。 传感器用于响应于RF电信号激励磁薄膜中的静磁波。 向磁性薄膜施加偏置磁场。 存在20°<= |θ1+θ2| <= 35°的关系，其中“theta1”表示换能器的纵向方向与磁性薄膜中的晶体的<001>取向之间的角度， θ2“表示换能器的横向与指定方向之间的角度。 指定的方向平行于磁性薄膜的水平面与垂直于磁性薄膜的水平面并且包含偏置磁场的方向的给定平面之间的交线。 另外，作为|θ3 | <= 75°存在关系，其中“θ3”表示指定方向与偏置磁场方向之间的角度。

公开(公告)号：US5883555A

公开(公告)日：1999-03-16

申请号：US915680

申请日：1997-08-21

申请人： Masanori Ikari ,  Masayuki Tanno ,  Toshihiko Ryuo ,  Takao Kuki ,  Toshihiro Nomoto

发明人： Masanori Ikari ,  Masayuki Tanno ,  Toshihiko Ryuo ,  Takao Kuki ,  Toshihiro Nomoto

IPC分类号： H03H2/00 ,  H01P1/215

CPC分类号： H03H2/001

摘要： A magnetostatic wave device includes a Gd.sub.3 Ga.sub.5 O.sub.12 substrate off-angled from a {110} plane. A magnetic thin film including a crystal of garnet is formed on the Gd.sub.3 Ga.sub.5 O.sub.12 substrate by liquid-phase epitaxy. A transducer is operative for exciting magnetostatic wave in the magnetic thin film in response to an RF electric signal. A bias magnetic field is applied to the magnetic thin film. There is a relation as 20.degree..ltoreq..vertline..theta..sub.1 +.theta..sub.2 .vertline..ltoreq.35.degree., where ".theta..sub.1 " denotes an angle between a longitudinal direction of the transducer and a orientation of the crystal in the magnetic thin film, and ".theta..sub.2 " denotes an angle between a direction of the bias magnetic field and a transverse direction of the transducer which is perpendicular to the longitudinal direction thereof.

摘要翻译： 静磁波装置包括从{110}平面偏斜的Gd 3 Ga 5 O 12衬底。 通过液相外延在Gd3Ga5O12基板上形成包含石榴石晶体的磁性薄膜。 传感器用于响应于RF电信号激励磁薄膜中的静磁波。 向磁性薄膜施加偏置磁场。 有一个关系为20°取向之间的角度，“θ2” 在偏置磁场的方向和与其纵向方向垂直的换能器的横向之间。

公开(公告)号：US5880651A

公开(公告)日：1999-03-09

申请号：US916409

申请日：1997-08-22

申请人： Masanori Ikari ,  Masayuki Tanno ,  Toshihiko Ryuo ,  Takao Kuki ,  Toshihiro Nomoto

发明人： Masanori Ikari ,  Masayuki Tanno ,  Toshihiko Ryuo ,  Takao Kuki ,  Toshihiro Nomoto

IPC分类号： C30B29/28 ,  H01F10/28 ,  H03H2/00 ,  H01P1/215

CPC分类号： H03H2/001

摘要： A reflection-type S/N enhancer includes a Gd.sub.3 Ga.sub.5 O.sub.12 substrate off-angled from a {110} plane. A magnetic thin film including a crystal of garnet is formed on the Gd.sub.3 Ga.sub.5 O.sub.12 substrate by liquid-phase epitaxy. The magnetic thin film has a saturation magnetization in a range of 500 G to 1,100 G. A transducer is operative for exciting magnetostatic wave in the magnetic thin film in response to an RF electric signal. A bias magnetic field is applied to the magnetic thin film. There is a relation as .vertline..theta..sub.1 +.theta..sub.2 .vertline. orientation of the crystal in the magnetic thin film, and ".theta..sub.2 " denotes an angle between a direction of the bias magnetic field and a transverse direction of the transducer in a horizontal plane. The transverse direction of the transducer is perpendicular to the longitudinal direction thereof.

摘要翻译： 反射型S / N增强器包括从{110}平面偏斜的Gd 3 Ga 5 O 12衬底。 通过液相外延在Gd3Ga5O12基板上形成包含石榴石晶体的磁性薄膜。 磁性薄膜的饱和磁化强度在500G至1100G的范围内。传感器用于响应于RF电信号激励磁性薄膜中的静磁波。 向磁性薄膜施加偏置磁场。 有一个关系为| θ1θθ2 | <45°，其中“θ1”表示换能器的纵向方向与磁性薄膜中的晶体的<001>取向之间的角度，“θ2”表示 偏置磁场的方向和换能器的横向在水平面内。 换能器的横向垂直于其纵向方向。

公开(公告)号：US5610401A

公开(公告)日：1997-03-11

申请号：US615726

申请日：1996-03-14

申请人： Yoshinori Kuwabara ,  Toshihiko Ryuo

发明人： Yoshinori Kuwabara ,  Toshihiko Ryuo

IPC分类号： G01T1/20 ,  G01T1/164 ,  G01T1/202

CPC分类号： G01T1/1644 ,  G01T1/202

摘要： A radiant ray-detector having a high resolving ability and capable of being easily produced as well as a method for producing the same are herein disclosed. The radiant ray-detector comprises a plurality of photomultiplier tubes 11 combined together and scintillator chips 1, wherein the scintillator chips 1 each is in the form of a hexahedron, more than one face thereof is mirror finished, the other faces are surface-toughened and a number of these scintillator chips 1 greater than the number of the photomultiplier tubes 11 are joined together so that the overall area of the resulting mirror surface of a group of scintillator chips 1 is approximately identical to the area of an entrance window 12 of each corresponding photomultiplier tube 11 and wherein different transmittances are imparted to individual coarse faces 4 of the scintillator chip 1 joined to those of other scintillator chips. In particular, the transmittances of these scintillator chip 1 are preferably designed such that they increase as the distance between the chips and the center of the group of chips increases. The method for producing the radiant ray-detector is characterized in that the transmittance of each joined face 4 of the scintillator chip 1 is controlled by properly selecting the particle size of abrasive grains used for finishing each coarse face.

摘要翻译： 本文公开了具有高分辨能力并且易于制造的辐射光检测器及其制造方法。 辐射光检测器包括组合在一起的多个光电倍增管11和闪烁体芯片1，其中闪烁体芯片1各自为六面体形式，其多于一个面被镜面加工，其它面被表面增韧， 将大于光电倍增管11的数量的这些闪烁体芯片1的数量接合在一起，使得一组闪烁体芯片1的所得镜面的总面积与每个对应的入口窗口12的面积大致相同 光电倍增管11，并且其中不同的透射率被赋予与其它闪烁体芯片的闪烁体芯片1的接合的闪烁体芯片1的各个粗糙表面4。 特别地，这些闪烁体芯片1的透射率优选地设计成随着芯片与芯片组的中心之间的距离增加而增加。 辐射线检测器的制造方法的特征在于，通过适当选择用于精加工各粗面的磨粒的粒径来控制闪烁体芯片1的各接合面4的透射率。

公开(公告)号：US5449942A

公开(公告)日：1995-09-12

申请号：US189932

申请日：1994-02-01

申请人： Masayuki Tanno ,  Toshihiko Ryuo

发明人： Masayuki Tanno ,  Toshihiko Ryuo

IPC分类号： C30B19/02 ,  H01F10/24 ,  H01F41/28 ,  B32B9/00 ,  B32B19/00

CPC分类号： H01F10/245 ,  C30B19/02 ,  C30B29/28 ,  Y10S428/90

摘要： Proposed is a novel rare earth oxide-based magnetic garnet single crystal in the form of a film epitaxially grown in the crystallographic direction of on the substrate of a rare earth oxide-based garnet single crystal, which is useful as a magnetostatic device such as high-frequency oscillators capable of exhibiting improved temperature characteristics. The magnetic garnet single crystal is characterized by the specific chemical composition of the formula (Bi.sub.x R.sub.3-x)(Fe.sub.5-y M.sub.y)O.sub.12, in which R, is a rare earth element selected from the group consisting of Y, Lu, La or a combination thereof, M is Ga, Al or a combination thereof, x is 0.02 to 0.4 and y is 0.6 to 0.8, and also by the specific value of the growth-induced magnetic anisotropy constant Ku.sup.g in the range from 0.3.times.10.sup.4 to 1.5.times.10.sup.4 erg/cm.sup.3 in the crystallographic direction which can be imparted by an annealing heat treatment at a specified temperature.

摘要翻译： 提出了在基于稀土氧化物的石榴石单晶的基板上沿<111>的晶体学方向外延生长的薄膜形式的新型稀土氧化物基磁石榴石单晶，其可用作静磁装置 例如能够表现出改善的温度特性的高频振荡器。 磁性石榴石单晶的特征在​​于式（BixR3-x）（Fe5-yMy）O12的具体化学成分，其中R，是选自Y，Lu，La或组合的稀土元素 M为Ga，Al或其组合，x为0.02〜0.4，y为0.6〜0.8，生长诱导磁各向异性常数Kug的特定值在0.3×10 4〜1.5×10 4 erg / cm3，可以在特定温度下通过退火热处理赋予结晶<111>方向。

公开(公告)号：US5277845A

公开(公告)日：1994-01-11

申请号：US973003

申请日：1992-11-10

申请人： Toshihiko Ryuo ,  Toshiaki Watanabe

发明人： Toshihiko Ryuo ,  Toshiaki Watanabe

IPC分类号： C30B19/02 ,  C01F17/00 ,  C30B19/00 ,  C30B29/28 ,  H01F10/24 ,  H01F41/28 ,  G02B5/20 ,  C01G49/00

CPC分类号： H01F41/28 ,  C01F17/0012 ,  C30B19/00 ,  C30B29/28

摘要： A novel oxide garnet single crystal, which can be epitaxially grown on a rare earth-gallium garnet wafer and exhibiting excellent performance as a material of magneto-optical devices, is disclosed. The oxide garnet single crystal, grown on the substrate surface by the liquid-phase epitaxial method, has a chemical composition expressed by the formula(Bi.sub.a Eu.sub.b Ln.sub.1-a-b).sub.3 (Fe.sub.1-c M.sub.c).sub.5 O.sub.12,in which Ln is a rare earth element other than europium, e.g., terbium, M is an element selected from the group consisting of aluminum, gallium, indium and scandium, the subscript a is a positive number defined by 0.15.ltoreq.a.ltoreq.0.6, the subscript b is a positive number defined by 0.01.ltoreq.b.ltoreq.0.2 and the subscript c is a positive number defined by 0.01.ltoreq.c..ltoreq.0.1.

摘要翻译： 公开了一种新颖的氧化石榴石单晶，其可以外延生长在稀土镓镓石榴石晶片上，并且表现出优异的作为磁光器件材料的性能。 通过液相外延法在基材表面上生长的氧化石榴石单晶具有由式（BiaEubLn1-ab）3（Fe1-cMc）5O12表示的化学组成，其中Ln是除 铕，例如铽，M是选自铝，镓，铟和钪的元素，下标a是由0.15 <= a <= 0.6定义的正数，下标b是由 0.01 <= b <= 0.2，下标c为0.01≤c≤0.1的正数。