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公开(公告)号：US11576250B1
公开(公告)日：2023-02-07
申请号：US17445430
申请日：2021-08-19
Inventor： Cheng-Hao Lai , Ming-Hsun Tsai , Hsin-Feng Chen , Wei-Shin Cheng , Yu-Kuang Sun , Cheng-Hsuan Wu , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
Abstract: Some implementations described herein provide techniques and apparatuses for an extreme ultraviolet (EUV) radiation source that includes a backsplash-prevention system to reduce, minimize, and/or prevent the formation of tin (Sn) build-up in a tunnel structure of a collector flow ring that might otherwise be caused by the accumulation of Sn satellites. This reduces backsplash of Sn onto a collector of the EUV radiation source, increases the operational life of the collector (e.g., by increasing the time duration between cleaning and/or replacement of the collector), reduces downtime of the EUV radiation source, and/or enables the performance of the EUV radiation source to be sustained for longer time durations (e.g., by reducing, minimizing, and/or preventing the rate of Sn contamination of the collector), among other examples.
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公开(公告)号：US11537053B2
公开(公告)日：2022-12-27
申请号：US17450100
申请日：2021-10-06
Inventor： Chiao-Hua Cheng , Yu-Kuang Sun , Wei-Shin Cheng , Yu-Huan Chen , Ming-Hsun Tsai , Cheng-Hao Lai , Cheng-Hsuan Wu , Yu-Fa Lo , Shang-Chieh Chien , Heng-Hsin Liu , Li-Jui Chen , Sheng-Kang Yu
Abstract: Some implementations herein include a detection circuit and a fast and accurate in-line method for detecting blockage on a droplet generator head of an extreme ultraviolet exposure tool without impacting the flow of droplets of a target material through the droplet generator head. In some implementations described herein, the detection circuit includes a switch circuit that is configured in an open configuration, in which the switch is electrically open between two electrode elements. When an accumulation of the target material occurs across two or more electrode elements on the droplet generator head, the accumulation functions as a switch that closes the detection circuit. A controller may detect closure of the detection circuit.
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公开(公告)号：US10831110B2
公开(公告)日：2020-11-10
申请号：US15992000
申请日：2018-05-29
Inventor： Ai-Jen Hung , Yung-Yao Lee , Heng-Hsin Liu , Chin-Chen Wang , Ying Ying Wang
Abstract: A method includes receiving a wafer, defining a plurality of zones over the wafer, performing a multi-zone alignment compensation for each of the plurality of zones according to an equation along a first direction to obtain a plurality of compensation values for each of the plurality of zones, and performing a wafer alignment and a lithography exposure for each of the plurality of zones according to the plurality of compensation values. The wafer alignment and the lithography exposure are performed zone-by-zone.
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公开(公告)号：US09781773B2
公开(公告)日：2017-10-03
申请号：US15058531
申请日：2016-03-02
Inventor： Jui-Chun Peng , Jacky Chung , Heng-Hsin Liu , Chun-Hung Lin
CPC classification number: H05B3/143 , H01L21/67098 , H01L21/67103 , H01L21/67115 , H01L21/67132 , H01L21/67259 , H01L21/681 , H05B1/0233 , H05B3/148 , H05B3/68
Abstract: A method of heating/cooling one or more substrates includes placing the one or more substrates on a rotatable hot-cold plate, wherein each substrate of the one or more substrates is placed on a corresponding sub-plate of a plurality of sub-plates of the rotatable hot-cold plate. The method further includes rotating the one or more substrates, wherein rotating the one or more substrates comprises rotating each substrate of the one or more substrates independently. The method further includes heating or cooling the one or more substrates using a heating-cooling element, wherein rotating the one or more substrates comprises rotating the one or more substrates relative to the heating-cooling element.
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公开(公告)号：US09601324B2
公开(公告)日：2017-03-21
申请号：US14798799
申请日：2015-07-14
Inventor： I-Hsiung Huang , Heng-Hsin Liu , Heng-Jen Lee , Chin-Hsiang Lin
IPC: H01L21/02 , H01L21/683
CPC classification number: H01L21/0201 , H01L21/6835 , H01L2221/6834 , H01L2221/68381
Abstract: A method including bonding a process wafer having integrated circuits and a carrier wafer having at least one alignment mark to form a wafer assembly. The method further includes aligning the wafer assembly using the at least one alignment mark of the carrier wafer.
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Patent Agency Ranking
公开(公告)号：US12298672B2
公开(公告)日：2025-05-13
申请号：US18446870
申请日：2023-08-09
Inventor： Kai-Chieh Chang , Kai-Fa Ho , Li-Jui Chen , Heng-Hsin Liu
IPC: G03F7/00
Abstract: Some implementations described herein provide an exposure tool and associated methods of operation in which a scanner control system generates a scanner route for an exposure recipe such that the distance traveled by a substrate stage of the exposure tool along the scanner route is reduced and/or optimized for non-exposure fields on a semiconductor substrate. In this way, the scanner control system increases the productivity of the exposure tool, reduces processing times of the exposure tool, and increases yield in a semiconductor fabrication facility in which the exposure tool is included.
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公开(公告)号：US12189298B2
公开(公告)日：2025-01-07
申请号：US18223496
申请日：2023-07-18
Inventor： Che-Chang Hsu , Sheng-Kang Yu , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
Abstract: In a method of generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system one or more streams of a gas is directed, through one or more gas outlets mounted over a rim of a collector mirror of an EUV radiation source, to generate a flow of the gas over a surface of the collector mirror. The one or more flow rates of the one or more streams of the gas are adjusted to reduce an amount of metal debris deposited on the surface of the collector mirror.
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公开(公告)号：US12119129B2
公开(公告)日：2024-10-15
申请号：US18120905
申请日：2023-03-13
Inventor： Cheng Hung Tsai , Sheng-Kang Yu , Shang-Chieh Chien , Heng-Hsin Liu , Li-Jui Chen
CPC classification number: G21K1/06 , G02B5/0891 , G03F7/70033 , G03F7/702 , G03F7/7055 , G03F7/70916 , H05G2/005 , H05G2/008
Abstract: An extreme ultra violet (EUV) light source apparatus includes a metal droplet generator, a collector mirror, an excitation laser inlet port for receiving an excitation laser, a first mirror configured to reflect the excitation laser that passes through a zone of excitation, and a second mirror configured to reflect the excitation laser reflected by the first mirror.
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公开(公告)号：US12114411B2
公开(公告)日：2024-10-08
申请号：US18118039
申请日：2023-03-06
Inventor： Yu-Huan Chen , Yu-Chih Huang , Ming-Hsun Tsai , Shang-Chieh Chien , Heng-Hsin Liu
IPC: H05G2/00
Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. In some embodiments, a nozzle tube is arranged within the nozzle of the droplet generator, and the nozzle tube includes a structured nozzle pattern configured to provide an angular momentum to the target droplets.
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公开(公告)号：US11953839B2
公开(公告)日：2024-04-09
申请号：US18075181
申请日：2022-12-05
Inventor： Shih-Yu Tu , Shao-Hua Wang , Yen-Hao Liu , Chueh-Chi Kuo , Li-Jui Chen , Heng-Hsin Liu
IPC: G03F7/00
CPC classification number: G03F7/70925
Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.
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