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公开(公告)号：US12111583B2
公开(公告)日：2024-10-08
申请号：US18446698
申请日：2023-08-09
发明人： Kai-Chieh Chang , Kai-Fa Ho , Li-Jui Chen , Heng-Hsin Liu
IPC分类号： G03F7/00
CPC分类号： G03F7/70741 , G03F7/70033 , G03F7/70633 , G03F7/70875 , G03F7/70891
摘要： A reticle is pre-heated prior to an exposure operation of a semiconductor substrate lot to reduce substrate to substrate temperature variations of the reticle in the exposure operation. The reticle may be pre-heated while being stored in a reticle storage slot, while being transferred from the reticle storage slot to a reticle stage of an exposure tool, and/or in another location prior to being secured to the reticle stage for the exposure operation. In this way, the reduction in temperature variation of the reticle in the exposure operation provided by pre-heating the reticle may reduce overlay deltas and misalignment for the semiconductor substrates that are processed in the exposure operation. This increases overlay performance, increases yield of the exposure tool, and increases semiconductor device quality. Moreover, pre-heating the reticle prior to securing the reticle to the reticle stage for the exposure operation reduces and/or minimizes the impact that the pre-heating has on throughput and processing times of the exposure tool.
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公开(公告)号：US12066761B2
公开(公告)日：2024-08-20
申请号：US17461491
申请日：2021-08-30
发明人： Chiao-Hua Cheng , Sheng-Kang Yu , Shang-Chieh Chien , Wei-Chun Yen , Heng-Hsin Liu , Ming-Hsun Tsai , Yu-Fa Lo , Li-Jui Chen , Wei-Shin Cheng , Cheng-Hsuan Wu , Cheng-Hao Lai , Yu-Kuang Sun , Yu-Huan Chen
IPC分类号： G03F7/00
CPC分类号： G03F7/70483 , G03F7/70033 , G03F7/7085
摘要： In a method of inspecting an extreme ultraviolet (EUV) radiation source, during an idle mode, a borescope mounted on a fixture is inserted through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The fixture includes an extendible section mounted from a first side on a lead screw, and the camera of the borescope is mounted on a second side, opposite to the first side, of the extendible section. The extendible section is extended to move the camera inside the chamber of the EUV radiation source. One or more images are acquired by the camera from inside the chamber of the EUV radiation source at one or more viewing positions. The one or more acquired images are analyzed to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.
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公开(公告)号：US11782350B2
公开(公告)日：2023-10-10
申请号：US17884472
申请日：2022-08-09
发明人： Shao-Hua Wang , Chueh-Chi Kuo , Kuei-Lin Ho , Zong-You Yang , Cheng-Wei Sun , Wei-Yuan Chen , Cheng-Chieh Chen , Heng-Hsin Liu , Li-Jui Chen
CPC分类号： G03F7/70716 , G03F7/70808
摘要： A lithography system includes a table body, a wafer stage, a first sliding member, a second sliding member, a first cable, a first bracket, a rail guide, and a first protective film. The first sliding member is coupled to the wafer stage. The second sliding member is coupled to an edge of the table body, in which the first sliding member is coupled to a track of the second sliding member. The first bracket fixes the first cable, the first bracket being coupled to a roller structure, in which the roller structure includes a body and a wheel coupled to the body. The rail guide confines a movement of the wheel of the roller structure. The first protective film is adhered to a surface of the rail guide, in which the roller structure is moveable along the first protective film on the surface of the rail guide.
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公开(公告)号：US11720035B2
公开(公告)日：2023-08-08
申请号：US17459749
申请日：2021-08-27
发明人： Chih-Ping Yen , Yen-Shuo Su , Jui-Pin Wu , Chun-Lin Chang , Han-Lung Chang , Heng-Hsin Liu
CPC分类号： G03F7/70925 , G03F7/70025 , G03F7/70033 , G03F7/70916 , G03F7/70975
摘要： In order to prevent observed long-term energy decay of power amplifiers and correspondingly increase the lifespan of CO2 lasers employing them, a hydrogen-doped mixing gas is supplied from an external pipeline during operation or periodic maintenance in order to effectively remove solid contaminants that build-up over time on a surface of a catalyst disposed within the power amplifier.
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公开(公告)号：US11650512B2
公开(公告)日：2023-05-16
申请号：US17655877
申请日：2022-03-22
发明人： Che-Chang Hsu , Sheng-Kang Yu , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
CPC分类号： G03F7/70925 , G03F1/62 , G03F1/82 , G03F7/70033
摘要： Some implementations described herein provide a reticle cleaning device and a method of use. The reticle cleaning device includes a support member configured for extension toward a reticle within an extreme ultraviolet lithography tool. The reticle cleaning device also includes a contact surface disposed at an end of the support member and configured to bond to particles contacted by the contact surface. The reticle cleaning device further includes a stress sensor configured to measure an amount of stress applied to the support member at the contact surface. During a cleaning operation in which the contact surface is moving toward the reticle, the stress sensor may provide an indication that the amount of stress applied to the support member satisfies a threshold. Based on satisfying the threshold, movement of the contact surface and/or the support member toward the reticle ceases to avoid damaging the reticle.
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公开(公告)号：US20220326624A1
公开(公告)日：2022-10-13
申请号：US17382955
申请日：2021-07-22
摘要： A method for inspecting an extreme ultraviolet (EUV) light source includes: removing a collector mirror of the EUV light source from a collector chamber; installing an inspection apparatus within the collector chamber, the apparatus including a selectively extendable and retractable member and a camera at one end of the member; operating a first actuator to extend the member along a path through the interior chamber of the EUV light source, thereby moving the camera to a given position within the interior chamber of the EUV light source; operating a second actuator to pan the camera about an axis of rotation, thereby establishing a given camera orientation within the interior of the EUV light source; and, capturing an image of the interior chamber of the EUV light source with the camera while the camera is at the given position and orientation established by the operation of the first and second actuators.
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公开(公告)号：US11437161B1
公开(公告)日：2022-09-06
申请号：US17243300
申请日：2021-04-28
发明人： Chun-Lin Chang , Chieh Hsieh , Shang-Chieh Chien , Han-Lung Chang , Heng-Hsin Liu , Li-Jui Chen , Chin-Hsiang Lin
摘要： An apparatus includes an extreme ultraviolet light source vessel having an intermediate focus, a scanner having a light source aperture, and a deflection module arranged between the intermediate focus and the light source aperture. The deflection module includes a first electrode plate and a second electrode plate, configured to create an electric field therebetween. Tin particles moving from the intermediate focus to the light source aperture passes through the deflection module, and are deflected by the electric field therein.
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公开(公告)号：US11162777B2
公开(公告)日：2021-11-02
申请号：US16725222
申请日：2019-12-23
IPC分类号： G01B11/02 , H01L23/544 , G03F9/00
摘要： A wafer alignment apparatus includes a light source, a light detection device, and a rotation device configured to rotate a wafer. The light source is configured to provide a light directed to the wafer. The light detection device is configured to detect reflected light intensity from the wafer to locate at least one wafer alignment mark of wafer alignment marks separated by a plurality of angles. At least two of those angles are equal.
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公开(公告)号：US09772561B2
公开(公告)日：2017-09-26
申请号：US14804186
申请日：2015-07-20
发明人： Yung-Yao Lee , Heng-Hsin Liu , Yi-Ping Hsieh , Ying Ying Wang
CPC分类号： G03F7/70633 , G01N21/9501 , G03F9/7003 , G06F17/5081 , H01L22/12 , H01L22/20
摘要： An overlay measurement and correction method and device is provided. In an embodiment the measurement device takes measurements of a first semiconductor wafer and uses the measurements in a plurality of correction techniques to generate an overlay correction model. The plurality of correction techniques include a first order correction, a first intra-field high order parameter correction and a first inter-field high order parameter correction. The model is used to adjust the exposure parameters for the exposure of the next semiconductor wafer. The process is repeated on each semiconductor wafer for a run-to-run analysis.
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公开(公告)号：US12130555B2
公开(公告)日：2024-10-29
申请号：US18142500
申请日：2023-05-02
发明人： Chih-Ping Yen , Yen-Shuo Su , Chieh Hsieh , Shang-Chieh Chien , Chun-Lin Chang , Li-Jui Chen , Heng-Hsin Liu
CPC分类号： G03F7/70033 , H05G2/006 , H05G2/008
摘要： An extreme ultra violet (EUV) lithography method includes receiving an EUV light by a scanner from an EUV light source, the EUV light passing through an intermediate focus disposed in the scanner and at a junction of the EUV light source and the scanner; directing the EUV light by the scanner to a reticle in the scanner; and deflecting nanoparticles from the EUV light source away from the reticle by generating a gas flow using a gas jet disposed entirely in the scanner and proximate to an interface of the scanner and the intermediate focus such that the gas jet does not block the EUV light.
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