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    Lens cleaning via electrowetting
    21.
    发明授权
    Lens cleaning via electrowetting 有权

    公开(公告)号：US11693235B2

    公开(公告)日：2023-07-04

    申请号：US17165895

    申请日：2021-02-02

    Applicant: Texas Instruments Incorporated

    Inventor： Daniel Lee Revier ,  Benjamin Stassen Cook ,  David Patrick Magee ,  Stephen John Fedigan

    IPC: G02B27/00 ,  G01H13/00 ,  B08B7/02 ,  G01D5/24

    CPC classification number: G02B27/0006 ,  B08B7/028 ,  G01H13/00 ,  G01D5/2405

    Abstract: An apparatus includes a mass detection circuit coupled to a surface covered with a plurality of electrodes. The mass detection circuit is configured to detect a mass of a first droplet present on the surface. The apparatus further includes a transducer circuit coupled to a transducer, which is coupled to the surface and form a lens unit. The transducer circuit configured to excite a first vibration of the surface at a resonant frequency to form a high displacement region on the surface. The apparatus also includes a voltage excitation circuit coupled to the plurality of electrodes. In response to the detection of the mass of the first droplet, the voltage excitation circuit is configured to apply a sequence of differential voltages on one or more consecutive electrodes which moves the first droplet to the high displacement region.

    3D PRINTED SEMICONDUCTOR PACKAGE
    23.
    发明申请
    3D PRINTED SEMICONDUCTOR PACKAGE 有权

    公开(公告)号：US20210090904A1

    公开(公告)日：2021-03-25

    申请号：US17114240

    申请日：2020-12-07

    Applicant: Texas Instruments Incorporated

    Inventor： Benjamin Stassen Cook ,  Daniel Lee Revier

    IPC: H01L21/56 ,  H01L23/31

    Abstract: In described examples, a method for encapsulating a semiconductor device includes the steps of immersing a layer of the semiconductor device in a liquid encapsulation material, irradiating portions of the liquid encapsulation material to polymerize the liquid encapsulation material, and moving the semiconductor device further from a surface of the liquid encapsulation material proximate to the layer. Immersing the semiconductor device is performed to cover a layer of the device in the liquid encapsulation material. Targeted locations of the liquid encapsulation material covering the layer are irradiated to form solid encapsulation material. The semiconductor device is moved from a surface of the liquid encapsulation material so that a new layer of the semiconductor device and/or of the solid encapsulation material can be covered by the liquid encapsulation material. The irradiating and moving steps are then repeated until a three dimensional structure on the semiconductor device is formed using the solid encapsulation material.

    INTEGRATED CIRCUIT USING PHOTONIC BANDGAP STRUCTURE
    24.
    发明申请
    INTEGRATED CIRCUIT USING PHOTONIC BANDGAP STRUCTURE 审中-公开

    公开(公告)号：US20200141800A1

    公开(公告)日：2020-05-07

    申请号：US16715531

    申请日：2019-12-16

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Benjamin Stassen Cook ,  Daniel Lee Revier

    IPC: G01J3/02 ,  G01J3/12 ,  G01N21/3581 ,  G02B6/122

    Abstract: On an integrated circuit (IC) die, sensors are configured to receive electromagnetic energy and to generate signals in response to the electromagnetic energy. An encapsulation material encapsulates the IC die and the sensors. A filter structure includes a diffusion of particles within the encapsulation material. The filter structure includes: a first region configured to pass a first band of the electromagnetic energy to the sensors or to block the first band of the electromagnetic energy from passing to the sensors; and a second region configured to pass a second band of the electromagnetic energy to the sensors or to block the second band of the electromagnetic energy from passing to the sensors. The encapsulation material has a first intrinsic property, and the particles have a second intrinsic property that is different from the first intrinsic property.

    NANOPARTICLE BACKSIDE DIE ADHESION LAYER
    26.
    发明申请
    NANOPARTICLE BACKSIDE DIE ADHESION LAYER 审中-公开

    公开(公告)号：US20190279955A1

    公开(公告)日：2019-09-12

    申请号：US15914761

    申请日：2018-03-07

    Applicant: Texas Instruments Incorporated

    Inventor： Benjamin Stassen Cook ,  Daniel Lee Revier ,  Sadia Naseem ,  Mahmud Halim Chowdhury

    IPC: H01L23/00

    Abstract: In described examples, a microelectronic device includes a microelectronic die with a die attach surface. The microelectronic device further includes a nanoparticle layer coupled to the die attach surface. The nanoparticle layer may be in direct contact with the die attach surface, or may be coupled to the die attach surface through an intermediate layer, such as an adhesion layer or a contact metal layer. The nanoparticle layer includes nanoparticles having adjacent nanoparticles adhered to each other. The microelectronic die is attached to a package substrate by a die attach material. The die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles.

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