公开(公告)号：US20160313627A1

公开(公告)日：2016-10-27

申请号：US15191569

申请日：2016-06-24

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  Nayeemuddin Mohammed ,  YungShan Chang

IPC: G02F1/29 ,  G03B13/36 ,  H01L41/332 ,  H04N5/225 ,  C23F4/00 ,  H01L41/31

CPC classification number: G02F1/29 ,  C23F1/00 ,  C23F4/00 ,  G02B7/09 ,  G02F2001/294 ,  G03B13/36 ,  H01L21/32136 ,  H01L21/32139 ,  H01L41/31 ,  H01L41/332 ,  H04N5/2254 ,  H04N5/232 ,  H04N5/23229

Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.