公开(公告)号：US20200234974A1

公开(公告)日：2020-07-23

申请号：US16839176

申请日：2020-04-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuo ASADA ,  Takehiko ORII ,  Shinji IRIE ,  Nobuhiro TAKAHASHI ,  Ayano HAGIWARA ,  Tatsuya YAMAGUCHI

IPC: H01L21/3213 ,  H01L21/687 ,  H01L21/67 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/02 ,  H01L29/66

Abstract: There is provided an etching method which includes: forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other in a lateral direction; and etching the silicon-containing film by supplying the etching gas.

公开(公告)号：US20190228981A1

公开(公告)日：2019-07-25

申请号：US16252918

申请日：2019-01-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuo ASADA ,  Takehiko ORII ,  Nobuhiro TAKAHASHI

IPC: H01L21/3065

Abstract: There is provided an etching method which includes: supplying an etching gas to a workpiece including a first SiGe-based material and a second SiGe-based material having different Ge concentrations; and selectively etching the first SiGe-based material and the second SiGe-based material with respect to the other using a difference in incubation time until the first SiGe-based material and the second SiGe-based material begin to be etched by the etching gas.

公开(公告)号：US20190198349A1

公开(公告)日：2019-06-27

申请号：US16232532

申请日：2018-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuo ASADA ,  Takehiko ORII ,  Shinji IRIE ,  Nobuhiro TAKAHASHI ,  Ayano HAGIWARA ,  Tatsuya YAMAGUCHI

IPC: H01L21/3213 ,  H01L21/67 ,  H01L21/3105 ,  H01L29/66 ,  H01L21/02

Abstract: There is provided an etching method which includes: forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other in a lateral direction; and etching the silicon-containing film by supplying the etching gas.

公开(公告)号：US20160225637A1

公开(公告)日：2016-08-04

申请号：US15013257

申请日：2016-02-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Masashi MATSUMOTO ,  Ayano HAGIWARA ,  Koji TAKEYA ,  Junichiro MATSUNAGA

IPC: H01L21/306

CPC classification number: H01L21/32135 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069

Abstract: An etching method includes: disposing a target substrate including a silicon and a silicon-germanium within a chamber; and performing both of selectively etching the silicon-germanium with respect to the silicon and selectively etching the silicon with respect to the silicon-germanium by varying ratios of F2 gas and NH3 gas in an etching gas that has a gas system including the F2 gas and the NH3 gas.

Abstract translation: 蚀刻方法包括：在室内设置包括硅和硅 - 锗的靶基板; 并且相对于硅选择性地蚀刻硅锗，并且通过在具有包括F2气体的气体系统的蚀刻气体中改变F2气体和NH 3气体的比率来相对于硅 - 锗选择性蚀刻硅， NH3气体。