公开(公告)号：US20160225637A1

公开(公告)日：2016-08-04

申请号：US15013257

申请日：2016-02-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Masashi MATSUMOTO ,  Ayano HAGIWARA ,  Koji TAKEYA ,  Junichiro MATSUNAGA

IPC: H01L21/306

CPC classification number: H01L21/32135 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069

Abstract: An etching method includes: disposing a target substrate including a silicon and a silicon-germanium within a chamber; and performing both of selectively etching the silicon-germanium with respect to the silicon and selectively etching the silicon with respect to the silicon-germanium by varying ratios of F2 gas and NH3 gas in an etching gas that has a gas system including the F2 gas and the NH3 gas.

Abstract translation: 蚀刻方法包括：在室内设置包括硅和硅 - 锗的靶基板; 并且相对于硅选择性地蚀刻硅锗，并且通过在具有包括F2气体的气体系统的蚀刻气体中改变F2气体和NH 3气体的比率来相对于硅 - 锗选择性蚀刻硅， NH3气体。

公开(公告)号：US20160086814A1

公开(公告)日：2016-03-24

申请号：US14784962

申请日：2014-03-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Tetsuro TAKAHASHI ,  Shuji MORIYA ,  Masashi MATSUMOTO ,  Junichiro MATSUNAGA

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: An etching method includes loading a target substrate W into a chamber 40, the target substrate W having a silicon nitride film formed thereon and at least one of a polysilicon film and a silicon oxide film formed adjacent to the silicon nitride film; supplying a fluorine (F)-containing gas and an O2 gas into the chamber 40, while at least the O2 gas is excited; and selectively etching the silicon nitride film with respect to at least one of the polysilicon film and the silicon oxide film using the F-containing gas and the O2 gas.

Abstract translation: 蚀刻方法包括将目标基板W装载到室40中，其上形成有氮化硅膜的目标基板W和与氮化硅膜相邻形成的多晶硅膜和氧化硅膜中的至少一个; 至少将O2气体激发，将含氟（F）的气体和O 2气体供给到室40中; 并且使用含F气体和O 2气体，相对于至少一个多晶硅膜和氧化硅膜选择性地蚀刻氮化硅膜。

公开(公告)号：US20220380892A1

公开(公告)日：2022-12-01

申请号：US17826880

申请日：2022-05-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Junichiro MATSUNAGA ,  Kiyotaka HORIKAWA

IPC: C23C16/06 ,  H01L21/02 ,  C23C16/52

Abstract: A substrate processing method is provided. The method comprises a first step of supplying a processing gas containing a halogen-containing gas and a basic gas to a substrate, which a silicon film is formed on and has a first temperature, and generating a reaction product by deforming a surface of the silicon film; and a second step of removing the reaction product by setting the substrate to a second temperature after the first step.

公开(公告)号：US20170309478A1

公开(公告)日：2017-10-26

申请号：US15517497

申请日：2015-09-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji TAKEYA ,  Kazuaki NISHIMURA ,  Nobuhiro TAKAHASHI ,  Junichiro MATSUNAGA

IPC: H01L21/02 ,  C23C16/455 ,  G05B19/04

CPC classification number: H01L21/02381 ,  C23C16/45557 ,  G05B19/04 ,  G05B2219/45212 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/32137 ,  H01L21/67069 ,  H01L29/165

Abstract: An etching method includes: disposing a target substrate which includes silicon and silicon-germanium in a chamber; supplying the chamber with processing gas which comprises H2 gas and Ar gas in an excited state; and selectively etching the silicon with respect to the silicon-germanium by the processing gas which is in the excited state. Due to this configuration, silicon can be etched, with high selectivity, with respect to the silicon-germanium.