公开(公告)号：US20220399204A1

公开(公告)日：2022-12-15

申请号：US17839869

申请日：2022-06-14

Applicant: Tokyo Electron Limited

Inventor： Nobuhiro TAKAHASHI ,  Ken NAKAGOMI

IPC: H01L21/3065 ,  H01L21/67

Abstract: An etching method includes: accommodating a substrate having a recess formed by a sidewall, which is a germanium-containing film, into a processing container; etching the sidewall by supplying an etching gas including a first fluorine-containing gas and a second fluorine-containing gas into the processing container; and controlling a shape of the sidewall after etching by, in the etching the sidewall, adjusting a partial pressure of the first fluorine-containing gas in the processing container, or a ratio of a flow rate of the second fluorine-containing gas to a flow rate of the first fluorine-containing gas supplied into the processing container.

公开(公告)号：US20220380892A1

公开(公告)日：2022-12-01

申请号：US17826880

申请日：2022-05-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Junichiro MATSUNAGA ,  Kiyotaka HORIKAWA

IPC: C23C16/06 ,  H01L21/02 ,  C23C16/52

Abstract: A substrate processing method is provided. The method comprises a first step of supplying a processing gas containing a halogen-containing gas and a basic gas to a substrate, which a silicon film is formed on and has a first temperature, and generating a reaction product by deforming a surface of the silicon film; and a second step of removing the reaction product by setting the substrate to a second temperature after the first step.

公开(公告)号：US20170309478A1

公开(公告)日：2017-10-26

申请号：US15517497

申请日：2015-09-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji TAKEYA ,  Kazuaki NISHIMURA ,  Nobuhiro TAKAHASHI ,  Junichiro MATSUNAGA

IPC: H01L21/02 ,  C23C16/455 ,  G05B19/04

CPC classification number: H01L21/02381 ,  C23C16/45557 ,  G05B19/04 ,  G05B2219/45212 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/32137 ,  H01L21/67069 ,  H01L29/165

Abstract: An etching method includes: disposing a target substrate which includes silicon and silicon-germanium in a chamber; supplying the chamber with processing gas which comprises H2 gas and Ar gas in an excited state; and selectively etching the silicon with respect to the silicon-germanium by the processing gas which is in the excited state. Due to this configuration, silicon can be etched, with high selectivity, with respect to the silicon-germanium.

公开(公告)号：US20210217651A1

公开(公告)日：2021-07-15

申请号：US17128628

申请日：2020-12-21

Applicant: Tokyo Electron Limited

Inventor： Junnosuke TAGUCHI ,  Nobuhiro TAKAHASHI

IPC: H01L21/687 ,  H01L21/683

Abstract: A substrate processing apparatus includes a vacuum chamber, a rotary table that is rotatably provided inside the vacuum chamber, a stage that is rotatable with respect to the rotary table, the stage having a center of rotation at a position spaced apart from a center of rotation of the rotary table, and the stage having a flange provided at a lower surface of the stage, a first holder and a second holder, the flange being sandwiched between the first holder and the second holder, and a pressing member configured to press the second holder in a direction in which the second holder comes closer to the first holder.

公开(公告)号：US20190181056A1

公开(公告)日：2019-06-13

申请号：US16213240

申请日：2018-12-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Koji TAKEYA ,  Keiji TANOUCHI

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/67

Abstract: There is provided a method of etching a silicon-containing film formed on a substrate, comprising: supplying an etching gas including a fluorine-containing gas having a smaller molecular weight than ClF3 to the silicon-containing film; and controlling etching amounts at a central portion and an outer peripheral portion of the silicon-containing film by controlling a flow velocity of the etching gas.

公开(公告)号：US20150380268A1

公开(公告)日：2015-12-31

申请号：US14743390

申请日：2015-06-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TODA ,  Nobuhiro TAKAHASHI ,  Hiroyuki TAKAHASHI

IPC: H01L21/311 ,  G05B19/18 ,  H01L21/02

CPC classification number: H01L21/31116 ,  G05B19/182 ,  H01L21/6708

Abstract: An etching method includes: disposing a substrate to be processed within a chamber, the substrate to be processed having a silicon oxide film formed on a surface thereof and a silicon nitride film formed adjacent to the silicon oxide film; and selectively etching the silicon oxide film with respect to the silicon nitride film by supplying HF gas or HF gas and F2 gas, an alcohol gas or water vapor, and an inert gas into the chamber.

Abstract translation: 蚀刻方法包括：将待处理的基板设置在室内，待处理的基板具有形成在其表面上的氧化硅膜和与氧化硅膜相邻形成的氮化硅膜; 并通过将HF气体或HF气体以及F2气体，醇气体或水蒸气以及惰性气体供给到腔室中，相对于氮化硅膜选择性地蚀刻氧化硅膜。

公开(公告)号：US20130251896A1

公开(公告)日：2013-09-26

申请号：US13845692

申请日：2013-03-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yamato TONEGAWA ,  Hidenobu SATO ,  Koji SASAKI ,  Nobuhiro TAKAHASHI ,  Keisuke SUZUKI

IPC: B05D5/00

CPC classification number: B05D5/00 ,  C23C16/04 ,  C23C16/345 ,  C23C16/45578

Abstract: Provided is a method of protecting a component of a film forming apparatus, which includes forming a film having a rough surface on a surface of a component which is provided in the interior of the processing chamber of a film forming apparatus such that the surface of the component is coated with the film having the rough surface, the component being exposed to a film forming atmosphere during a film forming process. Forming a film having a rough surface on a surface of the component is in some embodiments performed before or after the film forming process is performed on target substrate and in some cases both before and after.

Abstract translation: 本发明提供了一种保护成膜装置的部件的方法，该方法包括在成膜装置的处理室的内部设置的成分的表面上形成具有粗糙表面的膜， 组分涂覆有具有粗糙表面的膜，该成分在成膜过程中暴露于成膜气氛。 在一些实施例中，在对靶基板进行成膜处理之前或之后，在某些情况下，在前后均形成具有表面粗糙表面的膜。

公开(公告)号：US20230223270A1

公开(公告)日：2023-07-13

申请号：US17997155

申请日：2021-04-15

Applicant: Tokyo Electron Limited

Inventor： Takehiko ORII ,  Nobuhiro TAKAHASHI

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/31144 ,  H01L21/67069 ,  H01L21/02203 ,  H01L21/31116

Abstract: An etching method of supplying etching gases to a substrate to etch a surface of the substrate, includes a protection step of supplying amine gas to the substrate having an oxygen-containing silicon film to form a protective film for preventing etching by the etching gases on a surface of the oxygen-containing silicon film, for protecting the oxygen-containing silicon film, and a first etching step of supplying a first etching gas, which is one of the etching gases and is a fluorine-containing gas, and the amine gas to the substrate to etch the oxygen-containing silicon film.

公开(公告)号：US20230124597A1

公开(公告)日：2023-04-20

申请号：US17912415

申请日：2021-03-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Akitaka SHIMIZU ,  Yasuo ASADA

IPC: H01J37/32

Abstract: A method of processing a substrate in which a silicon layer and a silicon germanium layer are alternately stacked one above another, includes: forming an oxide film by selectively oxidizing a surface layer of an exposed surface of the silicon germanium layer using a gas containing fluorine and oxygen radicalized with a remote plasma; and removing the oxide film.

公开(公告)号：US20210358761A1

公开(公告)日：2021-11-18

申请号：US17277578

申请日：2019-06-24

Applicant: Tokyo Electron Limited

Inventor： Nobuhiro TAKAHASHI ,  Keiji TANOUCHI ,  Shinji IRIE ,  Akitaka SHIMIZU

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3065 ,  H01J37/32

Abstract: An etching method includes a step of preparing a substrate having a portion to be etched, a step of plasma-etching the portion to be etched of the substrate into a predetermined pattern using plasma of a processing gas containing a CF-based gas, and then a step of removing a CF-based deposit which remains as an etching residue. The step of removing the CF-based deposit includes a step of forming an oxide including an oxide of the CF-based deposit using oxygen-containing radicals, and a step of removing the generated oxide by radical processing or chemical processing using gas.