Evaporating method for forming thin film
    29.
    发明授权
    Evaporating method for forming thin film 有权
    用于形成薄膜的蒸发方法

    公开(公告)号:US08211233B2

    公开(公告)日:2012-07-03

    申请号:US12206785

    申请日:2008-09-09

    IPC分类号: C23C16/00

    摘要: A method of forming a plurality of multi-layer organic films in a single process includes preparing a first evaporating source that evaporates a first evaporating source material onto a first deposition region and a second evaporating source that evaporates a second evaporating source material onto a second deposition region, wherein the first evaporating source material and the second evaporating source material are different from each other, adjusting the first evaporating source and the second evaporating source in order to obtain a first overlapping region in which the first deposition region and the second deposition region overlap each other, driving the first evaporating source and the second evaporating source to deposit the first evaporating source material and the second evaporating source material onto a portion of an object to be processed, and moving the first evaporating source and the second evaporating source from a first end of the object to a second end of the object to form a multilayer film comprising a first layer that is a deposition of only the first evaporating source material, a second layer that is a deposition of a mixture of the first evaporating source material and the second evaporating source material and a third layer that is a deposition of only the second source material.

    摘要翻译: 在单一工艺中形成多层有机膜的方法包括制备将第一蒸发源材料蒸发到第一沉积区域上的第一蒸发源和将第二蒸发源材料蒸发到第二沉积物上的第二蒸发源 区域,其中第一蒸发源材料和第二蒸发源材料彼此不同,调节第一蒸发源和第二蒸发源,以获得其中第一沉积区域和第二沉积区域重叠的第一重叠区域 彼此驱动第一蒸发源和第二蒸发源,以将第一蒸发源材料和第二蒸发源材料沉积到待处理物体的一部分上,并且将第一蒸发源和第二蒸发源从第一蒸发源和第二蒸发源 对象的结束到对象的第二端 以形成多层膜,其包括仅第一蒸发源材料的沉积的第一层,作为第一蒸发源材料和第二蒸发源材料的混合物的沉积的第二层和作为第一蒸发源材料的第三层的第三层 仅沉积第二源材料。

    EVAPORATING METHOD FOR FORMING THIN FILM
    30.
    发明申请
    EVAPORATING METHOD FOR FORMING THIN FILM 审中-公开
    用于形成薄膜的蒸发方法

    公开(公告)号:US20120121796A1

    公开(公告)日:2012-05-17

    申请号:US13327714

    申请日:2011-12-15

    IPC分类号: B05D5/06

    摘要: A method of forming a film on a substrate includes depositing first and second evaporating source materials respective from first and second evaporating sources onto the substrate while moving the evaporating sources together with respect to the substrate, the first and second evaporating source materials being different from each other and positioned to provide a non-overlapping deposition region of the first evaporating source material, an overlapping deposition region of the first and second evaporating source materials and a non-overlapping deposition region of the second source material such that when the evaporating sources are moved, a film is formed to include a first layer that is a deposition of only the first evaporating source material, a second layer that is a deposition of a mixture of the first evaporating source material and the second evaporating source material and a third layer that is a deposition of only the second source material.

    摘要翻译: 一种在衬底上形成膜的方法包括将第一和第二蒸发源相应于第一和第二蒸发源的第一和第二蒸发源材料沉积到衬底上,同时相对于衬底移动蒸发源,第一和第二蒸发源材料与每个 并且定位成提供第一蒸发源材料的不重叠的沉积区域,第一和第二蒸发源材料的重叠沉积区域和第二源材料的非重叠沉积区域,使得当蒸发源移动时 形成膜,以包括仅第一蒸发源材料的沉积的第一层,作为第一蒸发源材料和第二蒸发源材料的混合物沉积的第二层,以及第三层 仅沉积第二源材料。