公开(公告)号：US20170107100A1

公开(公告)日：2017-04-20

申请号：US15176365

申请日：2016-06-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shyh-Wei Cheng ,  Chih-Yu Wang ,  Hsi-Cheng Hsu ,  Hsin-Yu Chen ,  Ji-Hong Chiang ,  Jui-Chun Weng ,  Wei-Ding Wu

IPC分类号： B81B7/00 ,  B81C1/00 ,  B81B3/00

CPC分类号： B81B7/0041 ,  B81B3/0081 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/012 ,  B81B2207/07 ,  B81B2207/09 ,  B81C1/00293 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/037 ,  B81C2203/038 ,  B81C2203/0735 ,  H01L28/20

摘要： The present disclosure relates to a MEMs package having a heating element configured to adjust a pressure within a hermetically sealed chamber by inducing out-gassing of into the chamber, and an associated method. In some embodiments, the MEMs package has a CMOS substrate having one or more semiconductor devices arranged within a semiconductor body. A MEMs structure is connected to the CMOS substrate and has a micro-electromechanical (MEMs) device. The CMOS substrate and the MEMs structure form a hermetically sealed chamber abutting the MEMs device. A heating element is electrically coupled to the one or more semiconductor devices and is separated from the hermetically sealed chamber by an out-gassing layer arranged along an interior surface of the hermetically sealed chamber. By operating the heating element to cause the out-gassing layer to release a gas, the pressure of the hermetically sealed chamber can be adjusted after it is formed.