L-shaped capacitor in thin film storage technology
    21.
    发明授权
    L-shaped capacitor in thin film storage technology 有权
    L形电容器在薄膜存储技术中

    公开(公告)号:US09397112B1

    公开(公告)日:2016-07-19

    申请号:US14645993

    申请日:2015-03-12

    Abstract: The present disclosure relates to a non-planar FEOL (front-end-of-the-line) capacitor comprising a charge trapping dielectric layer disposed between electrodes, and an associated method of fabrication. In some embodiments, the non-planar FEOL capacitor has a first electrode disposed over a substrate. A charge trapping dielectric layer is disposed onto the substrate at a position adjacent to the first electrode. The charge trapping dielectric layer has an “L” shape, with a lateral component extending in a first direction and a vertical component extending in a second direction. A second electrode is arranged onto the lateral component and is separated from the first electrode by the first component.

    Abstract translation: 本公开涉及一种包括设置在电极之间的电荷捕获介电层的非平面FEOL(前端线)电容器和相关的制造方法。 在一些实施例中,非平面FEOL电容器具有设置在衬底上的第一电极。 电荷捕获电介质层在与第一电极相邻的位置处设置在基板上。 电荷俘获介电层具有“L”形状,其中侧向分量沿第一方向延伸,垂直分量沿第二方向延伸。 第二电极布置在侧向部件上并且通过第一部件与第一电极分离。

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