公开(公告)号：US20210183696A1

公开(公告)日：2021-06-17

申请号：US17169989

申请日：2021-02-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Han Chen ,  I-Wen Wu ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang ,  Chung-Ting Ko ,  Jr-Hung Li ,  Chi On Chui

IPC: H01L21/768 ,  H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H01L29/40 ,  H01L29/417

Abstract: In an embodiment, a method includes: forming a differential contact etch stop layer (CESL) having a first portion over a source/drain region and a second portion along a gate stack, the source/drain region being in a substrate, the gate stack being over the substrate proximate the source/drain region, a first thickness of the first portion being greater than a second thickness of the second portion; depositing a first interlayer dielectric (ILD) over the differential CESL; forming a source/drain contact opening in the first ILD; forming a contact spacer along sidewalls of the source/drain contact opening; after forming the contact spacer, extending the source/drain contact opening through the differential CESL; and forming a first source/drain contact in the extended source/drain contact opening, the first source/drain contact physically and electrically coupling the source/drain region, the contact spacer physically separating the first source/drain contact from the first ILD.