公开(公告)号：US20220384276A1

公开(公告)日：2022-12-01

申请号：US17876083

申请日：2022-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Han Chen ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC: H01L21/8238 ,  H01L29/165 ,  H01L29/267 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78 ,  H01L21/02 ,  H01L21/311 ,  H01L21/285 ,  H01L29/66 ,  H01L27/092 ,  H01L29/08

Abstract: In an embodiment, a device includes: a semiconductor substrate; a first fin extending from the semiconductor substrate; a second fin extending from the semiconductor substrate; an epitaxial source/drain region including: a main layer in the first fin and the second fin, the main layer including a first semiconductor material, the main layer having an upper faceted surface and a lower faceted surface, the upper faceted surface and the lower faceted surface each being raised from respective surfaces of the first fin and the second fin; and a semiconductor contact etch stop layer (CESL) contacting the upper faceted surface and the lower faceted surface of the main layer, the semiconductor CESL including a second semiconductor material, the second semiconductor material being different from the first semiconductor material.

公开(公告)号：US20210098594A1

公开(公告)日：2021-04-01

申请号：US16587474

申请日：2019-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Han Chen ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC: H01L29/51 ,  H01L29/78 ,  H01L29/40 ,  H01L21/02 ,  H01L21/3105

Abstract: A semiconductor structure includes a fin protruding from a substrate, a first and a second metal gate stacks disposed over the fin, and a dielectric feature defining a sidewall of each of the first and the second metal gate stacks. Furthermore, the dielectric feature includes a two-layer structure, where sidewalls of the first layer are defined by the second layer, and where the first and the second layers have different compositions.

公开(公告)号：US11757022B2

公开(公告)日：2023-09-12

申请号：US17717777

申请日：2022-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jia-Heng Wang ,  Chun-Han Chen ,  I-Wen Wu ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC: H01L29/76 ,  H01L29/94 ,  H01L29/66 ,  H01L29/06 ,  H01L21/3213 ,  H01L21/8234 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/32136 ,  H01L21/823431 ,  H01L29/0653 ,  H01L29/7851

Abstract: The present disclosure provides semiconductor devices and methods of forming the same. A semiconductor device according to one embodiment of the present disclosure includes a first fin-shaped structure extending lengthwise along a first direction over a substrate, a first epitaxial feature over a source/drain region of the first fin-shaped structure, a gate structure disposed over a channel region of the first fin-shaped structure and extending along a second direction perpendicular to the first direction, and a source/drain contact over the first epitaxial feature. The bottom surface of the gate structure is closer to the substrate than a bottom surface of the source/drain contact.

公开(公告)号：US11532507B2

公开(公告)日：2022-12-20

申请号：US17169989

申请日：2021-02-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Han Chen ,  I-Wen Wu ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang ,  Chung-Ting Ko ,  Jr-Hung Li ,  Chi On Chui

IPC: H01L27/088 ,  H01L21/768 ,  H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H01L29/40 ,  H01L29/417 ,  H01L29/08

Abstract: In an embodiment, a method includes: forming a differential contact etch stop layer (CESL) having a first portion over a source/drain region and a second portion along a gate stack, the source/drain region being in a substrate, the gate stack being over the substrate proximate the source/drain region, a first thickness of the first portion being greater than a second thickness of the second portion; depositing a first interlayer dielectric (ILD) over the differential CESL; forming a source/drain contact opening in the first ILD; forming a contact spacer along sidewalls of the source/drain contact opening; after forming the contact spacer, extending the source/drain contact opening through the differential CESL; and forming a first source/drain contact in the extended source/drain contact opening, the first source/drain contact physically and electrically coupling the source/drain region, the contact spacer physically separating the first source/drain contact from the first ILD.

公开(公告)号：US20220238702A1

公开(公告)日：2022-07-28

申请号：US17717777

申请日：2022-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jia-Heng Wang ,  Chun-Han Chen ,  I-Wen Wu ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC: H01L29/66 ,  H01L29/06 ,  H01L21/3213 ,  H01L21/8234 ,  H01L29/78

Abstract: The present disclosure provides semiconductor devices and methods of forming the same. A semiconductor device according to one embodiment of the present disclosure includes a first fin-shaped structure extending lengthwise along a first direction over a substrate, a first epitaxial feature over a source/drain region of the first fin-shaped structure, a gate structure disposed over a channel region of the first fin-shaped structure and extending along a second direction perpendicular to the first direction, and a source/drain contact over the first epitaxial feature. The bottom surface of the gate structure is closer to the substrate than a bottom surface of the source/drain contact.

公开(公告)号：US20230402531A1

公开(公告)日：2023-12-14

申请号：US18357307

申请日：2023-07-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jia-Heng Wang ,  Chun-Han Chen ,  I-Wen Wu ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC: H01L29/66 ,  H01L29/06 ,  H01L21/3213 ,  H01L21/8234 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L29/0653 ,  H01L21/32136 ,  H01L21/823431 ,  H01L29/7851

Abstract: The present disclosure provides semiconductor devices and methods of forming the same. A semiconductor device according to one embodiment of the present disclosure includes a first fin-shaped structure extending lengthwise along a first direction over a substrate, a first epitaxial feature over a source/drain region of the first fin-shaped structure, a gate structure disposed over a channel region of the first fin-shaped structure and extending along a second direction perpendicular to the first direction, and a source/drain contact over the first epitaxial feature. The bottom surface of the gate structure is closer to the substrate than a bottom surface of the source/drain contact.

公开(公告)号：US20220328649A1

公开(公告)日：2022-10-13

申请号：US17850393

申请日：2022-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Han Chen ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC: H01L29/51 ,  H01L29/78 ,  H01L21/3105 ,  H01L21/02 ,  H01L29/40

Abstract: A semiconductor structure includes a fin protruding from a substrate, a first and a second metal gate stacks disposed over the fin, and a dielectric feature defining a sidewall of each of the first and the second metal gate stacks. Furthermore, the dielectric feature includes a two-layer structure, where sidewalls of the first layer are defined by the second layer, and where the first and the second layers have different compositions.

公开(公告)号：US11302802B2

公开(公告)日：2022-04-12

申请号：US17085032

申请日：2020-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jia-Heng Wang ,  Chun-Han Chen ,  I-Wen Wu ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC: H01L29/76 ,  H01L29/94 ,  H01L29/66 ,  H01L29/06 ,  H01L21/3213 ,  H01L21/8234 ,  H01L29/78

Abstract: The present disclosure provides semiconductor devices and methods of forming the same. A semiconductor device according to one embodiment of the present disclosure includes a first fin-shaped structure extending lengthwise along a first direction over a substrate, a first epitaxial feature over a source/drain region of the first fin-shaped structure, a gate structure disposed over a channel region of the first fin-shaped structure and extending along a second direction perpendicular to the first direction, and a source/drain contact over the first epitaxial feature. The bottommost surface of the gate structure is closer to the substrate than a bottommost surface of the source/drain contact.

公开(公告)号：US20210257483A1

公开(公告)日：2021-08-19

申请号：US17085032

申请日：2020-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jia-Heng Wang ,  Chun-Han Chen ,  I-Wen Wu ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/3213

Abstract: The present disclosure provides semiconductor devices and methods of forming the same. A semiconductor device according to one embodiment of the present disclosure includes a first fin-shaped structure extending lengthwise along a first direction over a substrate, a first epitaxial feature over a source/drain region of the first fin-shaped structure, a gate structure disposed over a channel region of the first fin-shaped structure and extending along a second direction perpendicular to the first direction, and a source/drain contact over the first epitaxial feature. The bottommost surface of the gate structure is closer to the substrate than a bottommost surface of the source/drain contact.

公开(公告)号：US20240363733A1

公开(公告)日：2024-10-31

申请号：US18769781

申请日：2024-07-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jia-Heng Wang ,  Chun-Han Chen ,  I-Wen Wu ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC: H01L29/66 ,  H01L21/3213 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/32136 ,  H01L21/823431 ,  H01L29/0653 ,  H01L29/7851

Abstract: The present disclosure provides semiconductor devices and methods of forming the same. A semiconductor device according to one embodiment of the present disclosure includes a first fin-shaped structure extending lengthwise along a first direction over a substrate, a first epitaxial feature over a source/drain region of the first fin-shaped structure, a gate structure disposed over a channel region of the first fin-shaped structure and extending along a second direction perpendicular to the first direction, and a source/drain contact over the first epitaxial feature. The bottom surface of the gate structure is closer to the substrate than a bottom surface of the source/drain contact.