公开(公告)号：US10964816B2

公开(公告)日：2021-03-30

申请号：US16441080

申请日：2019-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Chieh Yang ,  Li-Yang Chuang ,  Pei-Yu Wang ,  Wei Ju Lee ,  Ching-Wei Tsai ,  Kuan-Lun Cheng

IPC: H01L29/78 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/08

Abstract: A semiconductor device and a method of forming the same are provided. A semiconductor device according to an embodiment includes a P-type field effect transistor (PFET) and an N-type field effect transistor (NFET). The PFET includes a first gate structure formed over a substrate, a first spacer disposed on a sidewall of the first gate structure, and an unstrained spacer disposed on a sidewall of the first spacer. The NET includes a second gate structure formed over the substrate, the first spacer disposed on a sidewall of the second gate structure, and a strained spacer disposed on a sidewall of the first spacer.

公开(公告)号：US20210057559A1

公开(公告)日：2021-02-25

申请号：US16549266

申请日：2019-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Yang Chuang ,  Ching-Wei Tsai ,  Wang-Chun Huang ,  Kuan-Lun Cheng

IPC: H01L29/775 ,  H01L23/522 ,  H01L29/06 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/768 ,  H01L29/66

Abstract: An integrated circuit (IC) structure with a nanowire power switch device and a method of forming the IC structure are disclosed. The method includes forming a first layer of metal lines of a first back end of line (BEOL) interconnect structure and forming a semiconductor nanowire structure on a first metal line of the first layer of metal lines. The BEOL interconnect structure is formed on a front end of line (FEOL) device layer having multiple active devices. The method further includes forming a first dielectric layer wrapped around the semiconductor nanowire structure, forming a metal layer on the dielectric layer and on a second metal line of the first layer of metal lines, and forming a second layer of metal lines of a second BEOL interconnect structure on the semiconductor nanowire structure. The first and second metal lines are electrically isolated from each other.