中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

46 records (took 0.019 seconds)

    OPTICAL ASSEMBLY WITH COATING AND METHODS OF USE
    21.
    发明申请
    OPTICAL ASSEMBLY WITH COATING AND METHODS OF USE 有权

    公开(公告)号：US20220260932A1

    公开(公告)日：2022-08-18

    申请号：US17481010

    申请日：2021-09-21

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Pei-Cheng Hsu ,  Ping-Hsun Lin ,  Ta-Cheng Lien ,  Hsin-Chang Lee

    IPC: G03F7/20 ,  C23C16/455

    Abstract: Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.

    Method of Critical Dimension Control by Oxygen and Nitrogen Plasma Treatment in EUV Mask
    23.
    发明申请
    Method of Critical Dimension Control by Oxygen and Nitrogen Plasma Treatment in EUV Mask 有权

    公开(公告)号：US20220121103A1

    公开(公告)日：2022-04-21

    申请号：US17568037

    申请日：2022-01-04

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Pei-Cheng Hsu ,  Chun-Fu Yang ,  Ta-Cheng Lien ,  Hsin-Chang Lee

    IPC: G03F1/24 ,  G03F1/70 ,  G03F7/20

    Abstract: The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.

    Method of Critical Dimension Control by Oxygen and Nitrogen Plasma Treatment in EUV Mask
    24.
    发明申请
    Method of Critical Dimension Control by Oxygen and Nitrogen Plasma Treatment in EUV Mask 有权

    公开(公告)号：US20210033960A1

    公开(公告)日：2021-02-04

    申请号：US16776046

    申请日：2020-01-29

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Pei-Cheng Hsu ,  Chun-Fu Yang ,  Ta-Cheng Lien ,  Hsin-Chang Lee

    IPC: G03F1/24 ,  G03F1/54 ,  G03F1/80 ,  G03F1/48 ,  G03F1/70 ,  G03F7/20

    Abstract: The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.

    Method of critical dimension control by oxygen and nitrogen plasma treatment in EUV mask
    26.
    发明授权
    Method of critical dimension control by oxygen and nitrogen plasma treatment in EUV mask 有权

    公开(公告)号：US11960201B2

    公开(公告)日：2024-04-16

    申请号：US18317368

    申请日：2023-05-15

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Pei-Cheng Hsu ,  Chun-Fu Yang ,  Ta-Cheng Lien ,  Hsin-Chang Lee

    IPC: G03F1/24 ,  G03F1/70 ,  G03F7/20

    CPC classification number: G03F1/24 ,  G03F1/70 ,  G03F7/2004

    Abstract: The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.

    EUV photo masks and manufacturing method thereof
    28.
    发明授权
    EUV photo masks and manufacturing method thereof 有权

    公开(公告)号：US11619875B2

    公开(公告)日：2023-04-04

    申请号：US17090825

    申请日：2020-11-05

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Hsin-Chang Lee ,  Chia-Jen Chen ,  Pei-Cheng Hsu ,  Ta-Cheng Lien

    IPC: G03F1/24 ,  G03F1/54

    Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.

    EUV masks to prevent carbon contamination
    29.
    发明授权
    EUV masks to prevent carbon contamination 有权

    公开(公告)号：US11561464B2

    公开(公告)日：2023-01-24

    申请号：US17532939

    申请日：2021-11-22

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Pei-Cheng Hsu ,  Ta-Cheng Lien ,  Hsin-Chang Lee

    IPC: G03F1/24 ,  G03F1/22

    Abstract: An extreme ultra-violet mask includes a substrate, a multi-layered mirror layer, a capping layer, a first tantalum-containing oxide layer, a tantalum-containing nitride layer, and a second tantalum-containing oxide layer. The multi-layered mirror layer is over the substrate. The capping layer is over the multi-layered mirror layer. The first tantalum-containing oxide layer is over the capping layer. The tantalum-containing nitride layer is over the first tantalum-containing oxide layer. The second tantalum-containing oxide layer is over the tantalum-containing nitride layer.

Patent Agency Ranking