公开(公告)号：US06951689B1

公开(公告)日：2005-10-04

申请号：US09233033

申请日：1999-01-20

申请人： Makoto Higashikawa

发明人： Makoto Higashikawa

IPC分类号： B32B9/04 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0392 ,  H01L31/052 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0392 ,  H01L31/03921 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/056 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/541 ,  Y02E10/548 ,  Y02P70/521

摘要： The present invention provides a substrate with a transparent conductive layer comprising at least one layer stacked on a supporting substrate, wherein the surface of the transparent conductive layer has a distribution of inclination arctan (df/dx) in the range of sampling length dx between 20 nm and 100 nm when a distance of the surface of said transparent conductive layer from the surface of said supporting substrate is regarded as f being a normal distribution having a kurtosis of −1.2 to 0.5 around 0° and a standard deviation of 20° to 55°, and a photovoltaic element using the substrate. The substrate can be produced at a high yield and a low cost suitable for practical use and has a high reliability. In addition, a photovoltaic element having a high photoelectric conversion efficiency is obtained when the substrate is used in manufacturing it.

摘要翻译： 本发明提供了一种具有透明导电层的基板，该透明导电层包括层叠在支撑基板上的至少一层，其中透明导电层的表面在采样长度dx的范围内具有20°的倾斜度分布（df / dx） 当所述透明导电层的表面距所述支撑衬底的表面的距离被认为是f为正常分布时，其峰均值为-1.2至0.5，约为0°，标准偏差为20°至55° °，以及使用该基板的光电元件。 可以以高产率和低成本生产适用于实际应用的基板，并具有高可靠性。 此外，当制造基板时，获得具有高光电转换效率的光电元件。

公开(公告)号：US06645573B2

公开(公告)日：2003-11-11

申请号：US09261499

申请日：1999-03-03

申请人： Makoto Higashikawa ,  Masafumi Sano

发明人： Makoto Higashikawa ,  Masafumi Sano

IPC分类号： H05H124

CPC分类号： C23C16/545 ,  C23C16/24 ,  C23C16/509

摘要： A process for forming a microcrystalline silicon series thin film by arranging a long substrate in a vacuum chamber so as to oppose an electrode provided in the vacuum chamber and while transporting the long substrate in a longitudinal direction, causing glow discharge between the electrode and the long substrate to deposit the microcrystalline silicon series thin film on the long substrate, wherein a plurality of bar-like shaped electrodes as the electrode are arranged such that they are perpendicular to a normal line of the long substrate and their intervals to the long substrate are all or partially different. The glow discharge is caused using a high frequency power with an oscillation frequency in a range of from 50 MHz to 550 MHz, whereby depositing the microcrystalline series thin film on the long substrate. An apparatus suitable for practicing the process is included.

摘要翻译： 一种微晶硅系列薄膜的制造方法，其特征在于，在真空室内配置长衬底以与设在真空室中的电极相对，并且沿长度方向输送长衬底，从而在电极与长电极之间产生辉光放电 衬底以将微晶硅系列薄膜沉积在长衬底上，其中多个作为电极的棒状电极被布置成使得它们垂直于长衬底的法线，并且它们与长衬底的间隔全部 或部分不同。 使用振荡频率在50MHz〜550MHz范围内的高频功率引起辉光放电，由此将微晶系列薄膜沉积在长基板上。 包括适用于实施该过程的装置。